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Citations per year
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Cited by
All
Since 2019
Citations
2
1
h-index
1
1
i10-index
0
0
0
2
1
2018
2019
2020
1
1
Co-authors
Srimanta Baishya
NIT Silchar
Verified email at nits.ac.in
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S. Deb
Department of Electrical Engineering,
IIT Madras
Verified email at ee.iitm.ac.in
Microelectronics
Semiconductor Device Modeling
TFET
Ballistic FinFET
Semiconductor Fabrication
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Year
Modeling and simulation of DC characteristics of a novel NMOS based high pressure sensor
S Deb, S Baishya
International Conference for Convergence for Technology-2014, 1-6
, 2014
2
2014
TCAD based study of a novel 24 nm quantum well symmetric IDG NMOS transistor with ultra-low I
off
S Baishya, S Deb
International Conference for Convergence for Technology-2014, 1-6
, 2014
2014
TCAD based study of a noble 24 nm DMIDG MOSFET for LOW power applications
S Deb, S Baishya
2014 International Conference on Green Computing Communication and …
, 2014
2014
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Srimanta BaishyaNIT SilcharVerified email at nits.ac.in
Srimanta BaishyaNIT SilcharVerified email at nits.ac.in