| Electron transport and full-band electron-phonon interactions in graphene A Akturk, N Goldsman Journal of Applied Physics 103 (5), 2008 | 360 | 2008 |
| Radiation effects in commercial 1200 V 24 A silicon carbide power MOSFETs A Akturk, JM McGarrity, S Potbhare, N Goldsman IEEE Transactions on Nuclear Science 59 (6), 3258-3264, 2012 | 138 | 2012 |
| Single event effects in Si and SiC power MOSFETs due to terrestrial neutrons A Akturk, R Wilkins, J McGarrity, B Gersey IEEE Transactions on Nuclear Science 64 (1), 529-535, 2016 | 97 | 2016 |
| Device modeling at cryogenic temperatures: Effects of incomplete ionization A Akturk, J Allnutt, Z Dilli, N Goldsman, M Peckerar IEEE transactions on electron devices 54 (11), 2984-2990, 2007 | 90 | 2007 |
| Electron transport and velocity oscillations in a carbon nanotube A Akturk, G Pennington, N Goldsman, A Wickenden IEEE Transactions on Nanotechnology 6 (4), 469-474, 2007 | 90 | 2007 |
| Reliability studies of SiC vertical power MOSFETs DJ Lichtenwalner, B Hull, E Van Brunt, S Sabri, DA Gajewski, D Grider, ... 2018 IEEE International Reliability Physics Symposium (IRPS), 2B. 2-1-2B. 2-6, 2018 | 64 | 2018 |
| Compact and distributed modeling of cryogenic bulk MOSFET operation A Akturk, M Holloway, S Potbhare, D Gundlach, B Li, N Goldsman, ... IEEE Transactions on Electron Devices 57 (6), 1334-1342, 2010 | 59 | 2010 |
| Reliability of SiC power devices against cosmic ray neutron single-event burnout DJ Lichtenwalner, A Akturk, J McGarrity, J Richmond, T Barbieri, B Hull, ... Materials Science Forum 924, 559-562, 2018 | 55 | 2018 |
| Self-consistent modeling of heating and MOSFET performance in 3-D integrated circuits A Akturk, N Goldsman, G Metze IEEE Transactions on Electron Devices 52 (11), 2395-2403, 2005 | 53 | 2005 |
| Deformation potential carrier-phonon scattering in semiconducting carbon nanotube transistors G Pennington, N Goldsman, A Akturk, AE Wickenden Applied Physics Letters 90 (6), 2007 | 51 | 2007 |
| Characterization of Single-Photon Avalanche Diodes in a 0.5 m Standard CMOS Process—Part 1: Perimeter Breakdown Suppression M Dandin, A Akturk, B Nouri, N Goldsman, P Abshire IEEE Sensors Journal 10 (11), 1682-1690, 2010 | 50 | 2010 |
| Quantum modeling and proposed designs of CNT-embedded nanoscale MOSFETs A Akturk, G Pennington, N Goldsman IEEE transactions on electron devices 52 (4), 577-584, 2005 | 49 | 2005 |
| Energy-and time-dependent dynamics of trap occupation in 4H-SiC MOSFETs S Potbhare, N Goldsman, A Akturk, M Gurfinkel, A Lelis, JS Suehle IEEE Transactions on Electron Devices 55 (8), 2061-2070, 2008 | 47 | 2008 |
| High field density-functional-theory based Monte Carlo: 4H-SiC impact ionization and velocity saturation A Akturk, N Goldsman, S Potbhare, A Lelis Journal of Applied Physics 105 (3), 2009 | 45 | 2009 |
| Terrestrial neutron-induced failures in silicon carbide power MOSFETs and diodes A Akturk, JM McGarrity, N Goldsman, D Lichtenwalner, B Hull, D Grider, ... IEEE Transactions on Nuclear Science 65 (6), 1248-1254, 2018 | 42 | 2018 |
| Use of thermally conductive vias to extract heat from microelectronic chips and method of manufacturing M Khbeis, G Metze, N Goldsman, A Akturk US Patent 7,286,359, 2007 | 42 | 2007 |
| Terahertz current oscillations in single-walled zigzag carbon nanotubes A Akturk, N Goldsman, G Pennington, A Wickenden Physical review letters 98 (16), 166803, 2007 | 35 | 2007 |
| Structure, bonding, and passivation of single carbon-related oxide hole traps near 4H-SiC/SiO2 interfaces DP Ettisserry, N Goldsman, A Akturk, AJ Lelis Journal of Applied Physics 116 (17), 2014 | 34 | 2014 |
| Compact modeling of 0.35 μm SOI CMOS technology node for 4 K DC operation using Verilog-A A Akturk, M Peckerar, K Eng, J Hamlet, S Potbhare, E Longoria, R Young, ... Microelectronic Engineering 87 (12), 2518-2524, 2010 | 33 | 2010 |
| The effect of defects and their passivation on the density of states of the 4H-silicon-carbide/silicon-dioxide interface S Salemi, N Goldsman, DP Ettisserry, A Akturk, A Lelis Journal of Applied Physics 113 (5), 2013 | 31 | 2013 |
