Rupam Goswami
Rupam Goswami
Assistant Professor, Department of Electronics and Communication Engineering, Tezpur University
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Cited by
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Comparative Analyses of Circular Gate TFET and Heterojunction TFET for Dielectric-Modulated Label-Free Biosensing
R Goswami, B Bhowmick
IEEE Sensors Journal, 2019
A hetero-dielectric stack gate SOI-TFET with back gate and its application as a digital inverter
SK Mitra, R Goswami, B Bhowmick
Superlattices and Microstructures 92, 37-51, 2016
Electrical noise in Circular Gate Tunnel FET in presence of interface traps
R Goswami, B Bhowmick, S Baishya
Superlattices and Microstructures 86, 342-354, 2015
Effect of scaling on noise in Circular Gate TFET and its application as a digital inverter
R Goswami, B Bhowmick, S Baishya
Microelectronics Journal 53, 16-24, 2016
Tri-gate heterojunction SOI Ge-FinFETs
R Das, R Goswami, S Baishya
Superlattices and Microstructures 91, 51-61, 2016
An analytical model of drain current in a nanoscale circular gate TFET
R Goswami, B Bhowmick
IEEE Transactions on Electron Devices 64 (1), 45-51, 2017
Physics-based surface potential, electric field and drain current model of a δp+ Si1–xGex gate–drain underlap nanoscale n-TFET
R Goswami, B Bhowmick, S Baishya
International Journal of Electronics 103 (9), 1566-1579, 2016
Optimization of ferroelectric tunnel junction TFET in presence of temperature and its RF analysis
G Puja, R Goswami, B Bhowmick
Microelectronics Journal 92, 104618, 2019
Dependence of RF/Analog and Linearity Figure of Merits on Temperature in Ferroelectric FinFET: A Simulation Study
R Saha, R Goswami, B Bhowmick, S Baishya
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 2020
Analysis on effect of lateral straggle on analog, high frequency and DC parameters in Ge‐source DMDG TFET
R Saha, DK Panda, R Goswami, B Bhowmick, S Baishya
International Journal of RF and Microwave Computer‐Aided Engineering, e22579, 2021
Characteristic Enhancement of Hetero Dielectric DG TFET Using SiGe Pocket at Source/Channel Interface: Proposal and Investigation
SA Sahu, R Goswami, SK Mohapatra
Silicon, 2019
Circular gate tunnel FET: Optimization and noise analysis
R Goswami, B Bhowmick
Procedia Computer Science 93, 125-131, 2016
DC and RF/analog parameters in Ge‐source split drain‐ZHP‐TFET: Drain and pocket engineering technique
R Saha, DK Panda, R Goswami, B Bhowmick, S Baishya
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2022
Dielectric-Modulated TFETs as Label-Free Biosensors
R Goswami, B Bhowmick
Design, Simulation and Construction of Field Effect Transistors 1, 17-35, 2018
An algorithm for extraction of threshold voltage in heterojunction TFETs
R Goswami, B Bhowmick
IEEE Transactions on Nanotechnology 16 (1), 90-93, 2016
Hetero-gate-dielectric gate-drain underlap nanoscale TFET with a δp+Si1−xGexlayer at source-channel tunnel junction
R Goswami, B Bhowmick
2014 International Conference on Green Computing Communication and …, 2014
Carbon Nanomaterial Electronics: Devices and Applications
A Hazra, R Goswami
Springer Nature, 2021
Selection of Low Dimensional Material Alternatives to Silicon for Next Generation Tunnel Field Effect Transistors
P Manocha, K Kandpal, R Goswami
Silicon, 2020
Analysis on electrical parameters including temperature and interface trap charges in gate overlap Ge source step shape double gate TFET
R Saha, R Goswami, DK Panda
Microelectronics Journal 130, 105629, 2022
A Low Power, High Speed 1.2 V Dynamic Comparator for Analog-to-Digital Converters
S Jakhar, V Singh Mandloi, R Goswami, K Kandpal
Procedia Computer Science 171, 1018-1026, 2020
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