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Rupam Goswami
Rupam Goswami
Assistant Professor, Department of Electronics and Communication Engineering, Tezpur University
Verified email at tezu.ernet.in - Homepage
Title
Cited by
Cited by
Year
Comparative Analyses of Circular Gate TFET and Heterojunction TFET for Dielectric-Modulated Label-Free Biosensing
R Goswami, B Bhowmick
IEEE Sensors Journal, 2019
652019
A hetero-dielectric stack gate SOI-TFET with back gate and its application as a digital inverter
SK Mitra, R Goswami, B Bhowmick
Superlattices and Microstructures 92, 37-51, 2016
462016
Electrical noise in Circular Gate Tunnel FET in presence of interface traps
R Goswami, B Bhowmick, S Baishya
Superlattices and Microstructures 86, 342-354, 2015
452015
Effect of scaling on noise in Circular Gate TFET and its application as a digital inverter
R Goswami, B Bhowmick, S Baishya
Microelectronics Journal 53, 16-24, 2016
382016
Tri-gate heterojunction SOI Ge-FinFETs
R Das, R Goswami, S Baishya
Superlattices and Microstructures 91, 51-61, 2016
342016
An analytical model of drain current in a nanoscale circular gate TFET
R Goswami, B Bhowmick
IEEE Transactions on Electron Devices 64 (1), 45-51, 2017
332017
Physics-based surface potential, electric field and drain current model of a δp+ Si1–xGex gate–drain underlap nanoscale n-TFET
R Goswami, B Bhowmick, S Baishya
International Journal of Electronics 103 (9), 1566-1579, 2016
242016
Optimization of ferroelectric tunnel junction TFET in presence of temperature and its RF analysis
G Puja, R Goswami, B Bhowmick
Microelectronics Journal 92, 104618, 2019
182019
Characteristic Enhancement of Hetero Dielectric DG TFET Using SiGe Pocket at Source/Channel Interface: Proposal and Investigation
SA Sahu, R Goswami, SK Mohapatra
Silicon, 2019
172019
Dependence of RF/Analog and Linearity Figure of Merits on Temperature in Ferroelectric FinFET: A Simulation Study
R Saha, R Goswami, B Bhowmick, S Baishya
IEEE Transactions on Ultrasonics, Ferroelectrics, and Frequency Control, 2020
162020
Circular gate tunnel FET: Optimization and noise analysis
R Goswami, B Bhowmick
Procedia Computer Science 93, 125-131, 2016
162016
An algorithm for extraction of threshold voltage in heterojunction TFETs
R Goswami, B Bhowmick
IEEE Transactions on Nanotechnology 16 (1), 90-93, 2016
142016
Hetero-gate-dielectric gate-drain underlap nanoscale TFET with a δp+Si1−xGexlayer at source-channel tunnel junction
R Goswami, B Bhowmick
2014 International Conference on Green Computing Communication and …, 2014
132014
Analysis on effect of lateral straggle on analog, high frequency and DC parameters in Ge‐source DMDG TFET
R Saha, DK Panda, R Goswami, B Bhowmick, S Baishya
International Journal of RF and Microwave Computer‐Aided Engineering, e22579, 2021
112021
Dielectric-Modulated TFETs as Label-Free Biosensors
R Goswami, B Bhowmick
Design, Simulation and Construction of Field Effect Transistors 1, 17-35, 2018
82018
Selection of Low Dimensional Material Alternatives to Silicon for Next Generation Tunnel Field Effect Transistors
P Manocha, K Kandpal, R Goswami
Silicon, 2020
72020
Band Gap Modulated Tunnel FET
B Bhowmick, R Goswami
Design, Simulation and Construction of Field Effect Transistors 1, 37-51, 2018
72018
A Low Power, High Speed 1.2 V Dynamic Comparator for Analog-to-Digital Converters
S Jakhar, V Singh Mandloi, R Goswami, K Kandpal
Procedia Computer Science 171, 1018-1026, 2020
52020
Design of Pixel Circuit Using a-IGZO TFTs to Enhance Uniformity of AMOLED Displays by Threshold Voltage Compensation
A Sodhani, R Goswami, K Kandpal
Arabian Journal for Science and Engineering 46 (10), 9663-9672, 2021
42021
An SOI npn Double Gate TFET for Low Power Applications
D Deb, R Goswami, RK Baruah, K Kandpal, R Saha
2021 Devices for Integrated Circuit (DevIC), 621-623, 2021
42021
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