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Bhaswar Chakrabarti
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Implementation of multilayer perceptron network with highly uniform passive memristive crossbar circuits
FM Bayat, M Prezioso, B Chakrabarti, H Nili, I Kataeva, D Strukov
Nature Communications 9 (1), 2331, 2018
4072018
3-D Memristor Crossbars for Analog and Neuromorphic Computing Applications
GC Adam, BD Hoskins, M Prezioso, F Merrikh-Bayat, B Chakrabarti, ...
IEEE Transactions on Electron Devices, 1-7, 2016
2382016
A multiply-add engine with monolithically integrated 3D memristor crossbar/CMOS hybrid circuit
B Chakrabarti, MA Lastras-Montaño, G Adam, M Prezioso, B Hoskins, ...
Scientific Reports 7, 42429, 2017
1152017
Random telegraph noise (RTN) in scaled RRAM devices
D Veksler, G Bersuker, L Vandelli, A Padovani, L Larcher, A Muraviev, ...
51st IEEE international reliability physics symposium (IEEE IRPS), Monterey …, 2013
932013
Tunneling characteristics in chemical vapor deposited graphene–hexagonal boron nitride–graphene junctions
T Roy, L Liu, S de la Barrera, B Chakrabarti, ZR Hesabi, CA Joiner, ...
Applied Physics Letters 104 (12), 123506, 2014
672014
Methodology for the statistical evaluation of the effect of random telegraph noise (RTN) on RRAM characteristics
D Veksler, G Bersuker, B Chakrabarti, E Vogel, S Deora, K Matthews, ...
Electron Devices Meeting (IEDM), 2012 IEEE International, 9.6. 1-9.6. 4, 2012
582012
Multilevel Switching in Forming-Free Resistive Memory Devices With Atomic Layer Deposited Nanolaminate
B Chakrabarti, RV Galatage, EM Vogel
Electron Device Letters, IEEE 34 (7), 867-869, 2013
482013
Cleaning graphene with a titanium sacrificial layer
CA Joiner, T Roy, ZR Hesabi, B Chakrabarti, EM Vogel
Applied Physics Letters 104 (22), 223109, 2014
452014
Memristor-Based Perceptron Classifier: Increasing Complexity and Coping with Imperfect Hardware
FM Bayat, M Prezioso, B Chakrabarti, I Kataeva, D Strukov
2017 IEEE/ACM International Conference on Computer-Aided Design (ICCAD), 549-554, 2017
432017
Compute in‐Memory with Non‐Volatile Elements for Neural Networks: A Review from a Co‐Design Perspective
W Haensch, A Raghunathan, K Roy, B Chakrabarti, CM Phatak, C Wang, ...
Advanced Materials, 2204944, 2022
302022
Nonlinear Switching With Ultralow Reset Power in Graphene-Insulator-Graphene Forming-Free Resistive Memories
B Chakrabarti, T Roy, EM Vogel
IEEE Electron Device Letters 35 (7), 750-752, 2014
292014
Silicon compatible Sn-based resistive switching memory
S Sonde, B Chakrabarti, Y Liu, K Sasikumar, J Lin, L Stan, R Divan, ...
Nanoscale, 2018
252018
Nanoporous Dielectric Resistive Memories Using Sequential Infiltration Synthesis
B Chakrabarti, H Chan, K Alam, A Koneru, TE Gage, LE Ocola, R Divan, ...
ACS nano, 2021
172021
Ferroelectric Content-Addressable Memory Cells with IGZO Channel: Impact of Retention Degradation on the Multibit Operation
MR Sk, S Thunder, D Lehninger, Y Raffel, M Lederer, MPM Jank, ...
ACS Applied Electronic Materials, 2023
132023
3D-DPE: A 3D high-bandwidth dot-product engine for high-performance neuromorphic computing
MA Lastras-Montaño, B Chakrabarti, DB Strukov, KT Cheng
2017 Design, Automation & Test in Europe Conference & Exhibition (DATE …, 2017
132017
Ambipolar nano-crystalline-silicon TFTs with submicron dimensions and reduced threshold voltage shift
A Subramaniam, KD Cantley, RA Chapman, B Chakrabarti, EM Vogel
Device Research Conference (DRC), 2011 69th Annual, 99-100, 2011
122011
Asymmetric Resistive Switching of Bilayer HfOx/AlOy and AlOy/HfOx Memristors: The Oxide Layer Characteristics and Performance Optimization for Digital …
P Basnet, EC Anderson, FF Athena, B Chakrabarti, MP West, EM Vogel
ACS Applied Electronic Materials, 2023
112023
Highly-uniform multi-layer ReRAM crossbar circuits
GC Adam, BD Hoskins, M Prezioso, FM Bayat, B Chakrabarti, DB Strukov
Solid-State Device Research Conference (ESSDERC), 2016 46th European, 436-439, 2016
112016
Effect of Ti doping and annealing on multi-level forming-free resistive random access memories with atomic layer deposited HfTiOx nanolaminate
B Chakrabarti, EM Vogel
Microelectronic Engineering, 2013
112013
Neuromorphic Computing with 28nm High-K-Metal Gate Ferroelectric Field Effect Transistors Based Artificial Synapses
S De, Y Raffel, S Thunder, F Müller, M Lederer, T Kaempfe, MSK Rana, ...
Authorea Preprints, 2023
92023
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