| Design and investigation of recessed-T-gate double channel HEMT with InGaN back barrier for enhanced performance M Sharma, R Chaujar Arabian Journal for Science and Engineering, 1-8, 2021 | 15 | 2021 |
| Ultrascaled 10 nm T‐gate E‐mode InAlN/AlN HEMT with polarized doped buffer for high power microwave applications M Sharma, R Chaujar International Journal of RF and Microwave Computer‐Aided Engineering 32 (4 …, 2022 | 12 | 2022 |
| Impact of graded back-barrier on linearity of recessed gate inaln/gan hemt M Sharma, R Chaujar 2020 IEEE VLSI DEVICE CIRCUIT AND SYSTEM (VLSI DCS), 154-158, 2020 | 11 | 2020 |
| Polarization induced doping and high-k passivation engineering on T-gate MOS-HEMT for improved RF/microwave performance M Sharma, B Kumar, R Chaujar Materials Science and Engineering: B 290, 116298, 2023 | 4 | 2023 |
| Scattering Parameter Analysis of Gate Stack Gate All Around (GS-GAA) FinFET at THz for RF Applications B Kumar, M Sharma, R Chaujar 2022 8th International Conference on Signal Processing and Communication …, 2022 | 2 | 2022 |
| Dual-k Spacer JAM-GS-GAA FinFET: A Device for Low Power Analog Applications B Kumar, M Sharma, R Chaujar 2022 IEEE Silchar Subsection Conference (SILCON), 1-5, 2022 | 2 | 2022 |
| The Performance Analysis of 70nm T-gate InAlN/AlN MOS-HEMT using Graded Buffer M Sharma, R Chaujar 2021 Devices for Integrated Circuit (DevIC), 466-470, 2021 | 2 | 2021 |
| Linearity analysis of T-gate HEMT with graded back-barrier for wireless applications M Sharma, B Kumar, R Chaujar 2022 IEEE International Conference on Electronics, Computing and …, 2022 | 1 | 2022 |
| Simulation investigation of double-heterostructure T-gate HEMT with graded back-barrier engineering for improved RF performance M Sharma, B Kumar, R Chaujar Materials Today: Proceedings 71, 155-159, 2022 | 1 | 2022 |
| Static Performance Assessment of Junctionless Accumulation Mode Gate Stack Gate All Around (JAM-GS-GAA) FinFET Under Severe Temperature B Kumar, M Sharma, R Chaujar 2021 7th International Conference on Signal Processing and Communication …, 2021 | 1 | 2021 |
| Effect of Gate Oxide Material Variability on The Analog Performance of T-Gate GaN-MOS-HEMT with Graded Buffer M Sharma, B Kumar, R Chaujar 2021 7th International Conference on Signal Processing and Communication …, 2021 | 1 | 2021 |
