| Ultrawide‐bandgap semiconductors: research opportunities and challenges JY Tsao, S Chowdhury, MA Hollis, D Jena, NM Johnson, KA Jones, ... Advanced Electronic Materials 4 (1), 1600501, 2018 | 1145 | 2018 |
| 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped-Ga2O3MOSFETs AJ Green, KD Chabak, ER Heller, RC Fitch, M Baldini, A Fiedler, ... IEEE Electron Device Letters 37 (7), 902-905, 2016 | 584 | 2016 |
| Short-channel effect limitations on high-frequency operation of AlGaN/GaN HEMTs for T-gate devices GH Jessen, RC Fitch, JK Gillespie, G Via, A Crespo, D Langley, ... IEEE Transactions on Electron Devices 54 (10), 2589-2597, 2007 | 398 | 2007 |
| Enhancement-mode Ga2O3 wrap-gate fin field-effect transistors on native (100) β-Ga2O3 substrate with high breakdown voltage KD Chabak, N Moser, AJ Green, DE Walker, SE Tetlak, E Heller, ... Applied Physics Letters 109 (21), 2016 | 373 | 2016 |
| Electro-thermal modeling of multifinger AlGaN/GaN HEMT device operation including thermal substrate effects ER Heller, A Crespo Microelectronics Reliability 48 (1), 45-50, 2008 | 144 | 2008 |
| Lateral β-Ga2O3 field effect transistors KD Chabak, KD Leedy, AJ Green, S Mou, AT Neal, T Asel, ER Heller, ... Semiconductor Science and Technology 35 (1), 013002, 2019 | 122 | 2019 |
| Flexible gallium nitride for high‐performance, strainable radio‐frequency devices NR Glavin, KD Chabak, ER Heller, EA Moore, TA Prusnick, B Maruyama, ... Advanced Materials 29 (47), 1701838, 2017 | 117 | 2017 |
| Analysis of the residual stress distribution in AlGaN/GaN high electron mobility transistors S Choi, E Heller, D Dorsey, R Vetury, S Graham Journal of Applied Physics 113 (9), 2013 | 110 | 2013 |
| Thermometry of AlGaN/GaN HEMTs using multispectral raman features S Choi, ER Heller, D Dorsey, R Vetury, S Graham IEEE Transactions on Electron Devices 60 (6), 1898-1904, 2013 | 104 | 2013 |
| High pulsed current density β-Ga2O3 MOSFETs verified by an analytical model corrected for interface charge NA Moser, JP McCandless, A Crespo, KD Leedy, AJ Green, ER Heller, ... Applied Physics Letters 110 (14), 2017 | 90 | 2017 |
| The impact of bias conditions on self-heating in AlGaN/GaN HEMTs S Choi, ER Heller, D Dorsey, R Vetury, S Graham IEEE transactions on electron devices 60 (1), 159-162, 2012 | 86 | 2012 |
| The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistors S Choi, E Heller, D Dorsey, R Vetury, S Graham Journal of Applied Physics 114 (16), 2013 | 79 | 2013 |
| Electrical and structural dependence of operating temperature of AlGaN/GaN HEMTs E Heller, S Choi, D Dorsey, R Vetury, S Graham Microelectronics Reliability 53 (6), 872-877, 2013 | 77 | 2013 |
| Nanoscale electro-thermal interactions in AlGaN/GaN high electron mobility transistors B Chatterjee, C Dundar, TE Beechem, E Heller, D Kendig, H Kim, ... Journal of Applied Physics 127 (4), 2020 | 75 | 2020 |
| Direct observation of 0.57 eV trap-related RF output power reduction in AlGaN/GaN high electron mobility transistors AR Arehart, A Sasikumar, S Rajan, GD Via, B Poling, B Winningham, ... Solid-State Electronics 80, 19-22, 2013 | 75 | 2013 |
| Thermal characterization of gallium oxide Schottky barrier diodes B Chatterjee, A Jayawardena, E Heller, DW Snyder, S Dhar, S Choi Review of Scientific Instruments 89 (11), 2018 | 60 | 2018 |
| High resolution thermal characterization and simulation of power AlGaN/GaN HEMTs using micro-Raman thermography and 800 picosecond transient thermoreflectance imaging K Maize, G Pavlidis, E Heller, L Yates, D Kendig, S Graham, A Shakouri 2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1-8, 2014 | 59 | 2014 |
| Spatially-discriminating trap characterization methods for HEMTs and their application to RF-stressed AlGaN/GaN HEMTs AR Arehart, A Sasikumar, GD Via, B Winningham, B Poling, E Heller, ... 2010 International Electron Devices Meeting, 20.1. 1-20.1. 4, 2010 | 56 | 2010 |
| Characterization of AlGaN/GaN HEMTs using gate resistance thermometry G Pavlidis, S Pavlidis, ER Heller, EA Moore, R Vetury, S Graham IEEE Transactions on Electron Devices 64 (1), 78-83, 2016 | 53 | 2016 |
| Transient thermal characterization of AlGaN/GaN HEMTs under pulsed biasing G Pavlidis, D Kendig, ER Heller, S Graham IEEE Transactions on Electron Devices 65 (5), 1753-1758, 2018 | 48 | 2018 |
