|A review of techniques for polishing and planarizing chemically vapor-deposited (CVD) diamond films and substrates|
AP Malshe, BS Park, WD Brown, HA Naseem
Diamond and related materials 8 (7), 1198-1213, 1999
|An optically pumped 2.5 μm GeSn laser on Si operating at 110 K|
S Al-Kabi, SA Ghetmiri, J Margetis, T Pham, Y Zhou, W Dou, B Collier, ...
Applied Physics Letters 109 (17), 171105, 2016
|Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence|
SA Ghetmiri, W Du, J Margetis, A Mosleh, L Cousar, BR Conley, ...
Applied Physics Letters 105 (15), 151109, 2014
|Aluminum‐induced crystallization and counter‐doping of phosphorous‐doped hydrogenated amorphous silicon at low temperatures|
MS Haque, HA Naseem, WD Brown
Journal of applied physics 79 (10), 7529-7536, 1996
|Systematic study of Si-based GeSn photodiodes with 2.6 Ám detector cutoff for short-wave infrared detection|
T Pham, W Du, H Tran, J Margetis, J Tolle, G Sun, RA Soref, HA Naseem, ...
Optics express 24 (5), 4519-4531, 2016
|Process and apparatus for applying charged particles to a substrate, process for forming a layer on a substrate, products made therefrom|
WD Brown, RA Beera, AP Malshe, HA Naseem
US Patent 6,544,599, 2003
|Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics|
H Tran, W Du, SA Ghetmiri, A Mosleh, G Sun, RA Soref, J Margetis, J Tolle, ...
Journal of Applied Physics 119 (10), 103106, 2016
|Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates|
W Du, Y Zhou, SA Ghetmiri, A Mosleh, BR Conley, A Nazzal, RA Soref, ...
Applied Physics Letters 104 (24), 241110, 2014
|Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection|
BR Conley, A Mosleh, SA Ghetmiri, W Du, RA Soref, G Sun, J Margetis, ...
Optics express 22 (13), 15639-15652, 2014
|Growth and characterization of epitaxial Ge1-XSnx alloys and heterostructures using a commercial CVD system|
J Margetis, SA Ghetmiri, W Du, BR Conley, A Mosleh, R Soref, G Sun, ...
ECS Transactions 64 (6), 711, 2014
|Infrared studies of hydrogenated amorphous carbon (aC: H) and its alloys (aC: H, N, F)|
S Liu, S Gangopadhyay, G Sreenivas, SS Ang, HA Naseem
Physical Review B 55 (19), 13020, 1997
|Competition of optical transitions between direct and indirect bandgaps in Ge1−xSnx|
W Du, SA Ghetmiri, BR Conley, A Mosleh, A Nazzal, RA Soref, G Sun, ...
Applied Physics Letters 105 (5), 051104, 2014
|Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff|
BR Conley, J Margetis, W Du, H Tran, A Mosleh, SA Ghetmiri, J Tolle, ...
Applied Physics Letters 105 (22), 221117, 2014
|Material characterization of Ge1− x Sn x alloys grown by a commercial CVD system for optoelectronic device applications|
A Mosleh, SA Ghetmiri, BR Conley, M Hawkridge, M Benamara, A Nazzal, ...
Journal of electronic materials 43 (4), 938-946, 2014
|Systematic study of GeSn heterostructure-based light-emitting diodes towards mid-infrared applications|
Y Zhou, W Dou, W Du, T Pham, SA Ghetmiri, S Al-Kabi, A Mosleh, M Alher, ...
Journal of Applied Physics 120 (2), 023102, 2016
|Method of doping silicon, metal doped silicon, method of making solar cells, and solar cells|
HA Naseem, MS Haque, WD Brown
US Patent 6,339,013, 2002
|A preliminary investigation of the effect of post-deposition polishing of diamond films on the machining behavior of diamond-coated cutting tools|
DG Bhat, DG Johnson, AP Malshe, H Naseem, WD Brown, LW Schaper, ...
Diamond and Related materials 4 (7), 921-929, 1995
|A critical review of chemical vapor-deposited (CVD) diamond for electronic applications|
TA Railkar, WP Kang, H Windischmann, AP Malshe, HA Naseem, ...
Critical reviews in solid state and materials sciences 25 (3), 163-277, 2000
|A comparison of mechanical lapping versus chemical-assisted mechanical polishing and planarization of chemical vapor deposited (CVD) diamond|
CD Ollison, WD Brown, AP Malshe, HA Naseem, SS Ang
Diamond and Related Materials 8 (6), 1083-1090, 1999
|Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H2 and N2 carrier gas|
J Margetis, A Mosleh, S Al-Kabi, SA Ghetmiri, W Du, W Dou, M Benamara, ...
Journal of Crystal Growth 463, 128-133, 2017