gary wicks
gary wicks
Professor of Optics, University of Rochester
Verified email at optics.rochester.edu
Title
Cited by
Cited by
Year
detector, an infrared detector with reduced dark current and higher operating temperature
S Maimon, GW Wicks
Applied Physics Letters 89 (15), 151109, 2006
6052006
Demonstration of zero optical backscattering from single nanoparticles
S Person, M Jain, Z Lapin, JJ Senz, G Wicks, L Novotny
Nano letters 13 (4), 1806-1809, 2013
4572013
Binding of shallow donor impurities in quantum-well structures
NC Jarosik, BD McCombe, BV Shanabrook, J Comas, J Ralston, G Wicks
Physical review letters 54 (12), 1283, 1985
2661985
Circularly symmetric operation of a concentric‐circle‐grating, surface‐emitting, AlGaAs/GaAs quantum‐well semiconductor laser
T Erdogan, O King, GW Wicks, DG Hall, EH Anderson, MJ Rooks
Applied physics letters 60 (16), 1921-1923, 1992
1731992
Photoluminescence of AlxGa1−xAs grown by molecular beam epitaxy
G Wicks, WI Wang, CEC Wood, LF Eastman, L Rathbun
Journal of Applied Physics 52 (9), 5792-5796, 1981
1591981
Magnesium‐and calcium‐doping behavior in molecular‐beam epitaxial III‐V compounds
CEC Wood, D Desimone, K Singer, GW Wicks
Journal of Applied Physics 53 (6), 4230-4235, 1982
1551982
Room‐temperature exciton transitions in partially intermixed GaAs/AlGaAs superlattices
JD Ralston, S O’brien, GW Wicks, LF Eastman
Applied physics letters 52 (18), 1511-1513, 1988
1311988
Calculation of the conduction band discontinuity for Ga0.47In0.53As/Al0.48In0.52As heterojunction
DF Welch, GW Wicks, LF Eastman
Journal of applied physics 55 (8), 3176-3179, 1984
1151984
Anomalous redistribution of beryllium in GaAs grown by molecular beam epitaxy
P Enquist, GW Wicks, LF Eastman, C Hitzman
Journal of applied physics 58 (11), 4130-4134, 1985
1131985
Luminescence line shape broadening mechanisms in GaInAs/AlInAs quantum wells
DF Welch, GW Wicks, LF Eastman
Applied physics letters 46 (10), 991-993, 1985
1111985
Oxidation study of GaN using x-ray photoemission spectroscopy
NJ Watkins, GW Wicks, Y Gao
Applied physics letters 75 (17), 2602-2604, 1999
1091999
Hot electron relaxation time in GaN
H Ye, GW Wicks, PM Fauchet
Applied physics letters 74 (5), 711-713, 1999
1051999
Enhanced linear and nonlinear optical phase response of AlGaAs microring resonators
JE Heebner, NN Lepeshkin, A Schweinsberg, GW Wicks, RW Boyd, ...
Optics letters 29 (7), 769-771, 2004
1022004
Photoluminescence study of confined donors in quantum wells
X Liu, A Petrou, BD McCombe, J Ralston, G Wicks
Physical Review B 38 (12), 8522, 1988
1011988
Use of a valved, solid phosphorus source for the growth of Ga0.5In0.5P and Al0.5In0.5P by molecular beam epitaxy
GW Wicks, MW Koch, JA Varriano, FG Johnson, CR Wie, HM Kim, ...
Applied physics letters 59 (3), 342-344, 1991
991991
An intra-chip free-space optical interconnect
J Xue, A Garg, B Ciftcioglu, J Hu, S Wang, I Savidis, M Jain, R Berman, ...
ACM SIGARCH Computer Architecture News 38 (3), 94-105, 2010
942010
Tunneling escape time of electrons from a quantum well under the influence of an electric field
TB Norris, XJ Song, WJ Schaff, LF Eastman, G Wicks, GA Mourou
Applied physics letters 54 (1), 60-62, 1989
931989
Defect structure and intermixing of ion‐implanted AlxGa1xAs/GaAs superlattices
J Ralston, GW Wicks, LF Eastman, BC De Cooman, CB Carter
Journal of applied physics 59 (1), 120-123, 1986
931986
GaInAs‐AlInAs structures grown by molecular beam epitaxy
H Ohno, CEC Wood, L Rathbun, DV Morgan, GW Wicks, LF Eastman
Journal of Applied Physics 52 (6), 4033-4037, 1981
891981
Use of nBn structures to suppress surface leakage currents in unpassivated InAs infrared photodetectors
JR Pedrazzani, S Maimon, GW Wicks
Electronics Letters 44 (25), 1487-1488, 2008
852008
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