| Low-threshold-current 1.32-μm GaInNAs/GaAs single-quantum-well lasers grown by molecular-beam epitaxy W Li, T Jouhti, CS Peng, J Konttinen, P Laukkanen, EM Pavelescu, ... Applied Physics Letters 79 (21), 3386-3388, 2001 | 122 | 2001 |
| Effects of insertion of strain-mediating layers on luminescence properties of 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures EM Pavelescu, CS Peng, T Jouhti, J Konttinen, W Li, M Pessa, ... Applied Physics Letters 80 (17), 3054-3056, 2002 | 89 | 2002 |
| Influence of the As2/As4 growth modes on the formation of quantum dot-like InAs islands grown on InAlGaAs/InP (100) C Gilfert, EM Pavelescu, JP Reithmaier Applied Physics Letters 96 (19), 2010 | 74 | 2010 |
| Growth-temperature-dependent (self-) annealing-induced blueshift of photoluminescence from 1.3 μm GaInNAs/GaAs quantum wells EM Pavelescu, T Jouhti, M Dumitrescu, PJ Klar, S Karirinne, Y Fedorenko, ... Applied physics letters 83 (8), 1497-1499, 2003 | 68 | 2003 |
| 1.32-μm GaInNAs-GaAs laser with a low threshold current density CS Peng, T Jouhti, P Laukkanen, EM Pavelescu, J Konttinen, W Li, ... IEEE Photonics Technology Letters 14 (3), 275-277, 2002 | 67 | 2002 |
| Suppression of interfacial atomic diffusion in InGaNAs/GaAs heterostructures grown by molecular-beam epitaxy CS Peng, EM Pavelescu, T Jouhti, J Konttinen, IM Fodchuk, Y Kyslovsky, ... Applied physics letters 80 (25), 4720-4722, 2002 | 55 | 2002 |
| Photoreflectance evidence of multiple band gaps in dilute GaInNAs layers lattice-matched to GaAs R Kudrawiec, EM Pavelescu, J Wagner, G Sęk, J Misiewicz, M Dumitrescu, ... Journal of applied physics 96 (5), 2576-2579, 2004 | 51 | 2004 |
| Strain-compensated GaInNAs structures for 1.3-/spl mu/m lasers T Jouhti, CS Peng, EM Pavelescu, J Konttinen, LA Gomes, OG Okhotnikov, ... IEEE Journal of selected topics in quantum electronics 8 (4), 787-794, 2002 | 42 | 2002 |
| Nitrogen incorporation into GaInNAs lattice-matched to GaAs: The effects of growth temperature and thermal annealing EM Pavelescu, J Wagner, HP Komsa, TT Rantala, M Dumitrescu, M Pessa Journal of Applied Physics 98 (8), 2005 | 39 | 2005 |
| The energy-fine structure of multiple quantum wells grown at different temperatures and postgrown annealed R Kudrawiec, EM Pavelescu, J Andrzejewski, J Misiewicz, A Gheorghiu, ... Journal of applied physics 96 (5), 2909-2913, 2004 | 37 | 2004 |
| Influence of electronic coupling on the radiative lifetime in the (In, Ga) As/GaAs quantum dot–quantum well system M Syperek, J Andrzejewski, W Rudno-Rudziński, G Sęk, J Misiewicz, ... Physical Review B 85 (12), 125311, 2012 | 30 | 2012 |
| Towards high-performance nitride lasers at 1.3 μm and beyond M Pessa, CS Peng, T Jouhti, EM Pavelescu, W Li, S Karirinne, H Liu, ... IEE Proceedings-Optoelectronics 150 (1), 12-21, 2003 | 30 | 2003 |
| High-power tunnel-injection 1060-nm InGaAs–(Al) GaAs quantum-dot lasers EM Pavelescu, C Gilfert, JP Reithmaier, A Martin-Minguez, I Esquivias IEEE Photonics Technology Letters 21 (14), 999-1001, 2009 | 29 | 2009 |
| Electroluminescence of carbon ‘quantum’dots–from materials to devices LM Veca, A Diac, I Mihalache, P Wang, GE LeCroy, EM Pavelescu, ... Chemical Physics Letters 613, 40-44, 2014 | 27 | 2014 |
| Nitrogen-enhanced indium segregation in (Ga, In)(N, As)/GaAs multiple quantum wells grown by molecular-beam epitaxy E Luna, A Trampert, EM Pavelescu, M Pessa New Journal of Physics 9 (11), 405, 2007 | 27 | 2007 |
| Self-assembled quantum dots for single-dot optical investigations A Rastelli, SM Ulrich, EM Pavelescu, T Leinonen, M Pessa, P Michler, ... Superlattices and Microstructures 36 (1-3), 181-191, 2004 | 27 | 2004 |
| Front and backside-illuminated GaN/Si based metal–semiconductor–metal ultraviolet photodetectors manufactured using micromachining and nano-lithographic technologies A Müller, G Konstantinidis, M Androulidaki, A Dinescu, A Stefanescu, ... Thin Solid Films 520 (6), 2158-2161, 2012 | 25 | 2012 |
| Annealing effects on optical and structural properties of GaInNAs/GaAs quantum-well samples capped with dielectric layers HF Liu, CS Peng, EM Pavelescu, T Jouhti, S Karirinne, J Konttinen, ... Applied physics letters 84 (4), 478-480, 2004 | 25 | 2004 |
| GaInAs/(Al) GaAs quantum-dot lasers with high wavelength stability EM Pavelescu, C Gilfert, JP Reithmaier, A Martin-Minguez, I Esquivias Semiconductor science and technology 23 (8), 085022, 2008 | 24 | 2008 |
| Enhanced optical performances of strain-compensated 1.3-μm GaInNAs/GaNAs/GaAs quantum-well structures EM Pavelescu, T Jouhti, CS Peng, W Li, J Konttinen, M Dumitrescu, ... Journal of crystal growth 241 (1-2), 31-38, 2002 | 24 | 2002 |
