| Influence of Bi and N related impurity states on the band structure and band offsets of GaSbBiN alloys DP Samajdar, U Das, AS Sharma, S Das, S Dhar Current Applied Physics 16 (12), 1687-1694, 2016 | 22 | 2016 |
| Hydrostatic Pressure Dependent Optoelectronic Properties of InGaAsN/GaAs Spherical Quantum Dots for Laser Diode Applications I Mal, J Jayarubi, S Das, AS Sharma, AJ Peter, DP Samajdar physica status solidi (b) 256 (3), 1800395, 2019 | 17 | 2019 |
| Calculation of the band structure, carrier effective mass, and the optical absorption properties of GaSbBi alloys S Das, MK Bhowal, S Dhar Journal of Applied Physics 125 (7), 075705, 2019 | 16 | 2019 |
| Growth of dilute quaternary alloy InPNBi and its′ characterization S Das, AS Sharma, SA Gazi, S Dhar Journal of Crystal Growth 535, 125532, 2020 | 7 | 2020 |
| Exciton binding energy in GaAsBiN spherical quantum dot heterostructures S Das, S Dhar Superlattices and Microstructures 103, 145-150, 2017 | 7 | 2017 |
| Dependence of heavy hole exciton binding energy and the strain distribution in GaAs1−xBix/GaAs finite spherical quantum dots on Bi content in the material S Das, AS Sharma, TD Das, S Dhar Superlattices and Microstructures 86, 221-227, 2015 | 7 | 2015 |
| Photoluminescence investigation of the properties of GaAsSb in the dilute Sb regime S Das, AS Sharma, S Bakshi, S Dhar Journal of Materials Science: Materials in Electronics 31, 6255-6262, 2020 | 5 | 2020 |
| Influence of Pb vs Ga solvents during liquid phase epitaxy on the optical and electrical properties of GaSbBi layers AS Sharma, S Das, SA Gazi, S Dhar Journal of Applied Physics 126 (15), 155702, 2019 | 5 | 2019 |
| Anomalous increase of sub-band gap photoluminescence from InPBi layers grown by liquid phase epitaxy MK Bhowal, S Das, AS Sharma, SC Das, S Dhar Materials Research Express 6 (8), 085902, 2019 | 5 | 2019 |
| Single Mode Lasing from CsPbBr3 Microcrystals Fabricated by Solid State Space‐Confined Growth S Cheng, Z Qiao, Z Wang, L Xiao, S Das, YT Thung, Z Yuan, VD Ta, ... Advanced Optical Materials, 2203133, 2023 | 4 | 2023 |
| Control of the composition and the structural properties of GaAsSb layers, grown by liquid phase epitaxy, by Bi addition to the growth melt AS Sharma, S Das, S Dhar Journal of Crystal Growth 545, 125739, 2020 | 3 | 2020 |
| Influence of Sb Related Impurity States on the Band Structure of Dilute GaN1−xSbx Alloy PP Bera, S Das Journal of Electronic Materials 50, 478-482, 2021 | 1 | 2021 |
| Bi-Related below band Gap optical absorption band produced in GaSbBi after rapid thermal anneal at high temperatures MK Bhowal, S Das, AS Sharma, S Dhar Journal of Electronic Materials 48, 5131-5134, 2019 | 1 | 2019 |
| Tuning indirect-to-direct bandgap of lonsdaleite Si0.5Ge0.5 alloy via compressive strain for optical gain R Mayengbam, S Das, CS Tan, W Fan 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2023 | | 2023 |
| Temperature-dependent electron Hall mobility in LPE-grown InPBi/InP epilayers AS Sharma, N Malathi, S Das, RN Kini Journal of Materials Science: Materials in Electronics 34 (5), 450, 2023 | | 2023 |
Akant Sagar SharmaPostdoc fellow, Department of Physics, University of Sapienza, Rome ItalyVerified email at uniroma1.it
