Carrier-selective contacts for Si solar cells F Feldmann, M Simon, M Bivour, C Reichel, M Hermle, SW Glunz Applied Physics Letters 104 (18), 2014 | 236 | 2014 |
Efficient carrier-selective p-and n-contacts for Si solar cells F Feldmann, M Simon, M Bivour, C Reichel, M Hermle, SW Glunz Solar Energy Materials and Solar Cells 131, 100-104, 2014 | 231 | 2014 |
Top-down fabricated reconfigurable FET with two symmetric and high-current on-states M Simon, B Liang, D Fischer, M Knaut, A Tahn, T Mikolajick, WM Weber IEEE Electron Device Letters 41 (7), 1110-1113, 2020 | 51 | 2020 |
Top-down technology for reconfigurable nanowire FETs with symmetric on-currents M Simon, A Heinzig, J Trommer, T Baldauf, T Mikolajick, WM Weber IEEE Transactions on Nanotechnology 16 (5), 812-819, 2017 | 44 | 2017 |
20 Years of reconfigurable field-effect transistors: From concepts to future applications T Mikolajick, G Galderisi, M Simon, S Rai, A Kumar, A Heinzig, WM Weber, ... Solid-State Electronics 186, 108036, 2021 | 40 | 2021 |
Reconfigurable field effect transistors: A technology enablers perspective T Mikolajick, G Galderisi, S Rai, M Simon, R Böckle, M Sistani, C Cakirlar, ... Solid-State Electronics 194, 108381, 2022 | 38 | 2022 |
A silicon nanowire ferroelectric field‐effect transistor V Sessi, M Simon, H Mulaosmanovic, D Pohl, M Loeffler, T Mauersberger, ... Advanced Electronic Materials 6 (4), 1901244, 2020 | 33 | 2020 |
A wired-AND transistor: Polarity controllable FET with multiple inputs M Simon, J Trommer, B Liang, D Fischer, T Baldauf, MB Khan, A Heinzig, ... 2018 76th Device Research Conference (DRC), 1-2, 2018 | 29 | 2018 |
Bringing reconfigurable nanowire FETs to a logic circuits compatible process platform M Simon, A Heinzig, J Trommer, T Baldauf, T Mikolajick, WM Weber 2016 IEEE Nanotechnology Materials and Devices Conference (NMDC), 1-3, 2016 | 19 | 2016 |
Three-to-one analog signal modulation with a single back-bias-controlled reconfigurable transistor M Simon, H Mulaosmanovic, V Sessi, M Drescher, N Bhattacharjee, ... Nature communications 13 (1), 7042, 2022 | 14 | 2022 |
S2–2 back-bias reconfigurable field effect transistor: a flexible add-on functionality for 22 nm FDSOI V Sessi, M Simon, S Slesazeck, M Drescher, H Mulaosmanovic, K Li, ... 2021 Silicon Nanoelectronics Workshop (SNW), 1-2, 2021 | 12 | 2021 |
Inherent charge-sharing-free dynamic logic gates employing transistors with multiple independent inputs J Trommer, M Simon, S Slesazeck, WM Weber, T Mikolajick IEEE Journal of the Electron Devices Society 8, 740-747, 2020 | 12 | 2020 |
Lateral extensions to nanowires for controlling nickel silicidation kinetics: Improving contact uniformity of nanoelectronic devices M Simon, R Mizuta, Y Fan, A Tahn, D Pohl, J Trommer, S Hofmann, ... ACS Applied Nano Materials 4 (5), 4371-4378, 2021 | 10 | 2021 |
Importance of temperature dependence of interface traps in high-k metal gate stacks for silicon spin-qubit development Y Raffel, R Olivo, M Simon, L Vieler, R Hoffmann, S De, T Kämpfe, ... Applied Physics Letters 123 (3), 2023 | 3 | 2023 |
Eliminating charge sharing in clocked logic gates on the device level employing transistors with multiple independent inputs J Trommer, M Simon, S Slesazeck, WM Weber, T Mikolajick ESSDERC 2019-49th European Solid-State Device Research Conference (ESSDERC …, 2019 | 3 | 2019 |
Towards Scalable Reconfigurable Field Effect Transistor using Flash Lamp Annealing MB Khan, S Ghosh, S Prucnal, T Mauersberger, R Hübner, M Simon, ... 2020 Device Research Conference (DRC), 1-2, 2020 | 2 | 2020 |
Cross-shape reconfigurable field effect transistor for flexible signal routing C Cakirlar, M Simon, G Galderisi, I O'Connor, T Mikolajick, J Trommer Materials Today Electronics 4, 100040, 2023 | 1 | 2023 |
Semiconductor device structure having multiple gate terminals M Simon, J Trommer, W Weber, S Slesazeck US Patent 11,515,428, 2022 | 1 | 2022 |
Challenges in Electron Beam Lithography of Silicon Nanostructures C Cakirlar, G Galderisi, C Beyer, M Simon, T Mikolajick, J Trommer 2022 IEEE 22nd International Conference on Nanotechnology (NANO), 207-210, 2022 | 1 | 2022 |
Compact Modeling of Channel-Resistance Effects in Reconfigurable Field-Effect Transistors C Roemer, G Darbandy, M Schwarz, J Trommer, M Simon, A Heinzig, ... 2022 29th International Conference on Mixed Design of Integrated Circuits …, 2022 | 1 | 2022 |