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Indraneel Sanyal
Indraneel Sanyal
Verified email at bristol.ac.uk
Title
Cited by
Cited by
Year
Wide Bandgap Semiconductor-Based Electronics
F Ren, SJ Pearton
IOP Publishing, 2020
192020
Design and simulation of high performance lattice matched double barrier normally off AlInGaN/GaN HEMTs
NM Shrestha, Y Li, CH Chen, I Sanyal, JH Tarng, JI Chyi, S Samukawa
IEEE Journal of the Electron Devices Society 8, 873-878, 2020
102020
AlInGaN/GaN HEMTs with high Johnson’s figure-of-merit on low resistivity silicon substrate
I Sanyal, ES Lin, YC Wan, KM Chen, PT Tu, PC Yeh, JI Chyi
IEEE Journal of the Electron Devices Society 9, 130-136, 2020
92020
Achieving high electron mobility in AlInGaN/GaN heterostructures: The correlation between thermodynamic stability and electron transport properties
I Sanyal, YC Lee, YC Chen, JI Chyi
Applied Physics Letters 114 (22), 2019
62019
The influence of superlattice structure on the dynamic buffer response of AlInN/GaN-on-Si HEMTs
YC Chen, I Sanyal, TY Hu, YH Ju, JI Chyi
IEEE Transactions on Nanotechnology 19, 415-420, 2020
52020
Epitaxial Growth of (−201) β-Ga2O3 on (001) Diamond Substrates
A Nandi, D Cherns, I Sanyal, M Kuball
Crystal Growth & Design 23 (11), 8290-8295, 2023
42023
Parameter optimization of a single well nanoscale resonant tunneling diode for memory applications
I Sanyal, MD Sarkar
2015 IEEE International Conference on Electron Devices and Solid-State …, 2015
42015
Quaternary Barrier AlInGaN/GaN-on-Si High Electron Mobility Transistor with Record FT-Lg Product of 13.9 GHz-μm
PT Tu, I Sanyal, PC Yeh, HY Lee, LH Lee, CI Wu, JI Chyi
2020 International Symposium on VLSI Technology, Systems and Applications …, 2020
32020
Enhancing the performance of AlGaN/GaN Schottky barrier diodes by SF6 plasma treatment and deep anode recess
BS Wang, GY Lee, CC Yang, I Sanyal, JI Chyi
ECS Journal of Solid State Science and Technology 6 (11), S3081, 2017
32017
Ultra-wide bandgap Ga2O3 technologies: benefits of heterogenous integration
A Mishra, A Nandi, I Sanyal, Z Abdallah, JW Pomeroy, M Kuball
Oxide-based Materials and Devices XIV 12422, 31-35, 2023
22023
Enhanced Electrical Properties of AlInN/AlN/GaN Heterostructure using superlattice
YC Chen, I Sanyal, JI Chyi
2019 Compound Semiconductor Week (CSW), 1-2, 2019
22019
High electron mobility AlInGaN/AlN/GaN heterostructures grown on 150-mm silicon substrate (Conference Presentation)
I Sanyal, YC Lee, JI Chyi, KL Lin
Gallium Nitride Materials and Devices XIII 10532, 1053213, 2018
12018
Heterogenous integration of gallium oxide with diamond and SiC
A Nandi, I Sanyal, A Petkov, JW Pomeroy, D Cherns, M Kuball
Oxide-based Materials and Devices XV 12887, 61-65, 2024
2024
Evidence of charged interface states limited scattering in GaN heterostructures
I Sanyal, YC Chen, CY Yu, JI Chyi
Journal of Applied Physics 134 (8), 2023
2023
Selective Area Growth of β-Ga2O3
A Nandi, I Sanyal, M Kuball
2023 International Conference on Compound Semiconductor Manufacturing …, 2023
2023
AlInGaN/GaN HEMTs with Different GaN Cap Layer on Low Resistivity Silicon Substrate
HY Chen, PT Tu, PC Yeh, PJ Tzeng, SS Sheu, CI Wu, I Sanyal, JI Chyi
2022 International Symposium on VLSI Technology, Systems and Applications …, 2022
2022
Epitaxy and characterization of III-nitride high electron mobility transistors on silicon for RF applications
I Sanyal
National Central University, 2021
2021
High Electron Mobility of 1880 cm2 V-S In0.17 Al0.83N/GaN-on-Si HEMTs with GaN Cap Layer
YJ Luo, I Sanyal, WC Tzeng, YL Ho, YC Chang, CC Hsu, JI Chyi, CH Wu
2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia …, 2020
2020
The effect of growth parameters on the residual carbon concentration in GaN high electron mobility transistors: theory, modeling, and experiments
I Sanyal, JI Chyi
Wide Bandgap Semiconductor-Based Electronics, 10-1-10-23, 2020
2020
Improved Electrical Degradation of AlInGaN/GaN HEMT by using Triethylgallium Grown GaN channel and Cap
I Sanyal, TY Hu, YC Lee, ES Lin, JI Chyi
2019 Compound Semiconductor Week (CSW), 1-1, 2019
2019
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