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Dr Dheeraj sharma
Dr Dheeraj sharma
Indian Institute of Information Technology Design & Manufacturing Jabalpur
Verified email at iiitdmj.ac.in
Title
Cited by
Cited by
Year
A Charge-Plasma-Based Dielectric-Modulated Junctionless TFET for Biosensor Label-Free Detection
D Singh, S Pandey, K Nigam, D Sharma, DS Yadav, P Kondekar
IEEE Transactions on Electron Devices 64 (1), 271-278, 2017
1762017
Performance Assessment of A Novel Vertical Dielectrically Modulated TFET-Based Biosensor
M Verma, S Tirkey, S Yadav, D Sharma, DS Yadav
IEEE transactions on electron devices 64 (9), 3841-3848, 2017
1472017
Performance enhancement of novel InAs/Si hetero double-gate tunnel FET using Gaussian doping
S Ahish, D Sharma, YBN Kumar, MH Vasantha
IEEE Transactions on Electron Devices 63 (1), 288-295, 2016
1412016
A New Design Approach of Dopingless Tunnel FET for Enhancement of Device Characteristics
BR Raad, S Tirkey, D Sharma, P Kondekar
IEEE Transactions on Electron Devices 64 (4), 1830-1836, 2017
1212017
Design and Analysis of Polarity Controlled Electrically Doped Tunnel FET With Bandgap Engineering for Analog/RF Applications
PN Kondekar, K Nigam, S Pandey, D Sharma
IEEE Transactions on Electron Devices 64 (2), 412-418, 2017
1102017
Design and Analysis of Polarity Controlled Electrically Doped Tunnel FET With Bandgap Engineering for Analog/RF Applications
DS PN Kondekar, K Nigam, S Pandey
IEEE Transactions on Electron Devices 64 (02), 412-418, 1920
110*1920
Drain Work Function Engineered Doping-Less Charge Plasma TFET for Ambipolar Suppression and RF Performance Improvement: A Proposal, Design, and Investigation
BR Raad, D Sharma, P Kondekar, K Nigam, DS Yadav
IEEE Transactions on Electron Devices 63 (10), 3950-3957, 2016
1072016
Features based on analytic IMF for classifying motor imagery EEG signals in BCI applications
S Taran, V Bajaj, D Sharma, S Siuly, A Sengur
Measurement 116, 68-76, 2018
902018
Performance investigation of bandgap, gate material work function and gate dielectric engineered TFET with device reliability improvement
BR Raad, K Nigam, D Sharma, PN Kondekar
Superlattices and Microstructures 94, 138-146, 2016
892016
Dielectric and work function engineered TFET for ambipolar suppression and RF performance enhancement
B Raad, K Nigam, D Sharma, P Kondekar
Electronics Letters 52 (9), 770-772, 2016
842016
Analysis of a Novel Metal Implant Junctionless Tunnel FET for Better DC and Analog/RF Electrostatic Parameters
S Tirkey, D Sharma, DS Yadav, S Yadav
IEEE transactions on electron devices 64 (9), 3943-3950, 2017
722017
An efficient method for analysis of EMG signals using improved empirical mode decomposition
VK Mishra, V Bajaj, A Kumar, D Sharma, GK Singh
AEU-International Journal of Electronics and Communications 72, 200-209, 2017
682017
DC characteristics and analog/RF performance of novel polarity control GaAs-Ge based tunnel field effect transistor
K Nigam, P Kondekar, D Sharma
Superlattices and Microstructures 92, 224-231, 2016
682016
Effect of Interface Trap Charges on Performance Variation of Heterogeneous Gate Dielectric Junctionless-TFET
S Gupta, K Nigam, S Pandey, D Sharma, PN Kondekar
IEEE Transactions on Electron Devices 64 (11), 4731-4737, 2017
662017
A Barrier Controlled Charge Plasma-Based TFET With Gate Engineering for Ambipolar Suppression and RF/Linearity Performance Improvement
K Nigam, S Pandey, PN Kondekar, D Sharma, PK Parte
IEEE Transactions on Electron Devices 64 (6), 2751-2757, 2017
632017
Approach for ambipolar behaviour suppression in tunnel FET by workfunction engineering
K Nigam, D Sharma
Micro & Nano Letters 11 (8), 460-464, 2016
592016
A dielectrically modulated electrically doped tunnel FET for application of label free biosensor
P Venkatesh, K Nigam, S Pandey, D Sharma, PN Kondekar
Superlattices and Microstructures 109, 470-479, 2017
582017
Impact of Interface Trap Charges on Performance of Electrically Doped Tunnel FET With Heterogeneous Gate Dielectric
P Venkatesh, K Nigam, S Pandey, D Sharma, PN Kondekar
IEEE Transactions on Device and Materials Reliability 17 (1), 245-252, 2017
572017
Performance improvement of nano wire TFET by hetero-dielectric and hetero-material: At device and circuit level
J Patel, D Sharma, S Yadav, A Lemtur, P Suman
Microelectronics Journal, 2019
562019
Impactful study of dual work function, underlap and hetero gate dielectric on TFET with different drain doping profile for high frequency performance estimation and optimization
DS Yadav, D Sharma, BR Raad, V Bajaj
Superlattices and Microstructures 96, 36-46, 2016
522016
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