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Dr Dheeraj sharma
Dr Dheeraj sharma
Indian Institute of Information Technology Design & Manufacturing Jabalpur
Verified email at iiitdmj.ac.in
Title
Cited by
Cited by
Year
A Charge-Plasma-Based Dielectric-Modulated Junctionless TFET for Biosensor Label-Free Detection
D Singh, S Pandey, K Nigam, D Sharma, DS Yadav, P Kondekar
IEEE Transactions on Electron Devices 64 (1), 271-278, 2017
1912017
Performance Assessment of A Novel Vertical Dielectrically Modulated TFET-Based Biosensor
M Verma, S Tirkey, S Yadav, D Sharma, DS Yadav
IEEE transactions on electron devices 64 (9), 3841-3848, 2017
1612017
Performance enhancement of novel InAs/Si hetero double-gate tunnel FET using Gaussian doping
S Ahish, D Sharma, YBN Kumar, MH Vasantha
IEEE Transactions on Electron Devices 63 (1), 288-295, 2016
1472016
A New Design Approach of Dopingless Tunnel FET for Enhancement of Device Characteristics
BR Raad, S Tirkey, D Sharma, P Kondekar
IEEE Transactions on Electron Devices 64 (4), 1830-1836, 2017
1262017
Design and Analysis of Polarity Controlled Electrically Doped Tunnel FET With Bandgap Engineering for Analog/RF Applications
PN Kondekar, K Nigam, S Pandey, D Sharma
IEEE Transactions on Electron Devices 64 (2), 412-418, 2017
1142017
Design and Analysis of Polarity Controlled Electrically Doped Tunnel FET With Bandgap Engineering for Analog/RF Applications
DS PN Kondekar, K Nigam, S Pandey
IEEE Transactions on Electron Devices 64 (02), 412-418, 1920
114*1920
Drain Work Function Engineered Doping-Less Charge Plasma TFET for Ambipolar Suppression and RF Performance Improvement: A Proposal, Design, and Investigation
BR Raad, D Sharma, P Kondekar, K Nigam, DS Yadav
IEEE Transactions on Electron Devices 63 (10), 3950-3957, 2016
1092016
Performance investigation of bandgap, gate material work function and gate dielectric engineered TFET with device reliability improvement
BR Raad, K Nigam, D Sharma, PN Kondekar
Superlattices and Microstructures 94, 138-146, 2016
922016
Features based on analytic IMF for classifying motor imagery EEG signals in BCI applications
S Taran, V Bajaj, D Sharma, S Siuly, A Sengur
Measurement 116, 68-76, 2018
892018
Dielectric and work function engineered TFET for ambipolar suppression and RF performance enhancement
B Raad, K Nigam, D Sharma, P Kondekar
Electronics Letters 52 (9), 770-772, 2016
872016
Analysis of a Novel Metal Implant Junctionless Tunnel FET for Better DC and Analog/RF Electrostatic Parameters
S Tirkey, D Sharma, DS Yadav, S Yadav
IEEE transactions on electron devices 64 (9), 3943-3950, 2017
772017
Effect of Interface Trap Charges on Performance Variation of Heterogeneous Gate Dielectric Junctionless-TFET
S Gupta, K Nigam, S Pandey, D Sharma, PN Kondekar
IEEE Transactions on Electron Devices 64 (11), 4731-4737, 2017
702017
An efficient method for analysis of EMG signals using improved empirical mode decomposition
VK Mishra, V Bajaj, A Kumar, D Sharma, GK Singh
AEU-International Journal of Electronics and Communications 72, 200-209, 2017
702017
DC characteristics and analog/RF performance of novel polarity control GaAs-Ge based tunnel field effect transistor
K Nigam, P Kondekar, D Sharma
Superlattices and Microstructures 92, 224-231, 2016
682016
A dielectrically modulated electrically doped tunnel FET for application of label free biosensor
P Venkatesh, K Nigam, S Pandey, D Sharma, PN Kondekar
Superlattices and Microstructures 109, 470-479, 2017
652017
A Barrier Controlled Charge Plasma-Based TFET With Gate Engineering for Ambipolar Suppression and RF/Linearity Performance Improvement
K Nigam, S Pandey, PN Kondekar, D Sharma, PK Parte
IEEE Transactions on Electron Devices 64 (6), 2751-2757, 2017
652017
Performance improvement of nano wire TFET by hetero-dielectric and hetero-material: At device and circuit level
J Patel, D Sharma, S Yadav, A Lemtur, P Suman
Microelectronics Journal, 2019
622019
Impact of Interface Trap Charges on Performance of Electrically Doped Tunnel FET With Heterogeneous Gate Dielectric
P Venkatesh, K Nigam, S Pandey, D Sharma, PN Kondekar
IEEE Transactions on Device and Materials Reliability 17 (1), 245-252, 2017
602017
Approach for ambipolar behaviour suppression in tunnel FET by workfunction engineering
K Nigam, D Sharma
Micro & Nano Letters 11 (8), 460-464, 2016
582016
Precise analytical model for short channel cylindrical gate (CylG) gate-all-around (GAA) MOSFET
D Sharma, SK Vishvakarma
Solid-State Electronics 86, 68-74, 2013
542013
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