Amalendu Bhushan Bhattacharyya
Amalendu Bhushan Bhattacharyya
Verified email at jiit.ac.in
Title
Cited by
Cited by
Year
Compact MOSFET models for VLSI design
AB Bhattacharyya
John Wiley & Sons, 2009
1102009
Matching properties of linear MOS capacitors
R Singh, AB Bhattacharyya
Solid-State Electronics 32 (4), 299-306, 1989
441989
Electrical Characteristics of Lithium‐Doped ZnO Films
JK Srivastava, L Agarwal, AB Bhattacharyya
Journal of The Electrochemical Society 136 (11), 3414-3417, 1989
411989
Interface-state characteristics of GaN/GaAs MIS capacitors
E Lakshmi, AB Bhattacharyya
Solid-State Electronics 25 (8), 811-815, 1982
331982
Effect of structure on properties of aromatic polyamides
IK Varma, R Kumar, AB Bhattacharyya
Journal of Applied Polymer Science 40 (3‐4), 531-542, 1990
271990
The nature of intrinsic hole traps in thermal silicon dioxide
L Manchanda, J Vasi, AB Bhattacharyya
Journal of Applied Physics 52 (7), 4690-4696, 1981
251981
SPICE simulation of surface acoustic wave interdigital transducers
AB Bhattacharyya, S Tuli, S Majurndar
Ultrasonics, Ferroelectrics and Frequency Control, IEEE Transactions on 42 …, 1995
241995
Extended-Sakurai-Newton MOSFET model for ultra-deep-submicrometer CMOS digital design
N Chandra, A Kumar Yati, AB Bhattacharyya
VLSI Design, 2009 22nd International Conference on, 247-252, 2009
212009
Delay-time sensitivity in linear RC tree
N Jain, VC Prasad, AB Bhattacharyya
Circuits and Systems, IEEE Transactions on 34 (4), 443-445, 1987
211987
Modifield C-2C ladder voltage divider for application in PCM A/D convertors
SP Singh, A Prabhakar, AB Bhattacharyya
Electronics Letters 19 (19), 788-789, 1983
21*1983
C-2C ladder voltage dividers for application in all-MOS A/D convertors
SP Singh, A Prabhakar, AB Bhattacharyya
Electronics Letters 18 (12), 537-537, 1982
201982
Drift-field photovoltaic cell performance with bulk and surface recombinations†
RB Gangadhar, AB Bhattacharyya
International Journal of Electronics 25 (1), 17-26, 1968
151968
Approximation to impurity atom distribution from a two-step diffusion process
AB Bhattacharyya, TN Basavaraj
Electron Devices, IEEE Transactions on 20 (5), 509-510, 1973
131973
On-line extraction of model parameters of a long buried-channel MOSFET
AB Bhattacharyya, P Ratnam, D Nagchoudhuri, SC Rustagi
Electron Devices, IEEE Transactions on 32 (3), 545-550, 1985
121985
Switching properties of epitaxial planar transistors operating in saturation
AB Bhattacharyya, A Srivastava, R Kumar
Solid-State Electronics 18 (3), 277-286, 1975
121975
Single-section lumped models for integrated circuit resistors
AB Bhattacharyya, ML Gupta
Solid-State Electronics 16 (12), 1506-1509, 1973
111973
Tunnel-diode transient analysis
SL Sarnot, AB Bhattacharyya
Electronics Letters 5 (12), 275-277, 1969
111969
An automated nondestructive characterization system for pyroelectric materials
AB Bhattacharyya, S Tuli, S Kataria
Instrumentation and Measurement, IEEE Transactions on 43 (1), 30-33, 1994
101994
FLUIDS, PLASMAS, AND ELECTRICAL DISCHARGES
W Yang, A Gopinath, G Almogy, A Shakouri, A Yariv, DC Grille, Y Fan, ...
Applied Physics Letters 63 (20), 1993
10*1993
Low-frequency gain-enhanced CMOS operational amplifier
S Aggarwal, AB Bhattacharyya
IEE Proceedings G (Circuits, Devices and Systems) 138 (2), 170-174, 1991
101991
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