Alain Le Corre
Alain Le Corre
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Adresse e-mail validée de insa-rennes.fr
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Transparent optical packet switching: The European ACTS KEOPS project approach
C Guillemot, M Renaud, P Gambini, C Janz, I Andonovic, R Bauknecht, ...
Journal of lightwave technology 16 (12), 2117, 1998
6061998
Relationship between self‐organization and size of InAs islands on InP (001) grown by gas‐source molecular beam epitaxy
A Ponchet, A Le Corre, H L’haridon, B Lambert, S Salaün
Applied physics letters 67 (13), 1850-1852, 1995
2461995
Height dispersion control of InAs/InP quantum dots emitting at 1.55 μm
C Paranthoen, N Bertru, O Dehaese, A Le Corre, S Loualiche, B Lambert, ...
Applied Physics Letters 78 (12), 1751-1753, 2001
1962001
High-gain and low-threshold InAs quantum-dot lasers on InP
P Caroff, C Paranthoen, C Platz, O Dehaese, H Folliot, N Bertru, C Labbe, ...
Applied Physics Letters 87 (24), 243107, 2005
1552005
Decomposition mechanisms of trimethylgallium
CA Larsen, NI Buchan, SH Li, GB Stringfellow
Journal of crystal growth 102 (1-2), 103-116, 1990
1261990
A study of the structure of highly concentrated phases of DNA by X-ray diffraction
D Durand, J Doucet, F Livolant
Journal de Physique II 2 (9), 1769-1783, 1992
1151992
Strain in InAs islands grown on InP (001) analyzed by Raman spectroscopy
J Groenen, A Mlayah, R Carles, A Ponchet, A Le Corre, S Salaün
Applied physics letters 69 (7), 943-945, 1996
761996
Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55 μm quantum dot laser
C Paranthoen, C Platz, G Moreau, N Bertru, O Dehaese, A Le Corre, ...
Journal of crystal growth 251 (1-4), 230-235, 2003
752003
Photonic doppler velocimetry in shock physics experiments
P Mercier, J Benier, A Azzolina, JM Lagrange, D Partouche
Journal de Physique IV (Proceedings) 134, 805-812, 2006
68*2006
Evaluation of InGaPN and GaAsPN materials lattice-matched to Si for multi-junction solar cells
S Almosni, C Robert, T Nguyen Thanh, C Cornet, A Létoublon, T Quinci, ...
Journal of applied physics 113 (12), 123509, 2013
652013
Influence of stress and surface reconstruction on the morphology of tensile GaInAs grown on InP (001) by gas source molecular beam epitaxy
A Ponchet, A Le Corre, A Godefroy, S Salaün, A Poudoulec
Journal of crystal growth 153 (3-4), 71-80, 1995
651995
Electrical and optical properties of rare earth dopants (Yb, Er) in n-type III-V (InP) semiconductors
B Lambert, A Le Corre, Y Toudic, C Lhomer, G Grandpierre, M Gauneau
Journal of Physics: Condensed Matter 2 (2), 479, 1990
641990
Quantitative experimental assessment of hot carrier-enhanced solar cells at room temperature
DT Nguyen, L Lombez, F Gibelli, S Boyer-Richard, A Le Corre, O Durand, ...
Nature Energy 3 (3), 236-242, 2018
592018
Schottky and field‐effect transistor fabrication on InP and GaInAs
S Loualiche, H L’haridon, A Le Corre, D Lecrosnier, M Salvi, ...
Applied physics letters 52 (7), 540-542, 1988
581988
Experimental evidence of hot carriers solar cell operation in multi-quantum wells heterostructures
J Rodière, L Lombez, A Le Corre, O Durand, JF Guillemoles
Applied Physics Letters 106 (18), 183901, 2015
552015
Spreading of non volatile liquids on smooth solid surfaces: role of long range forces
L Leger, M Erman, AM Guinet-Picart, D Ausserre, C Strazielle, JJ Benattar, ...
Revue de Physique Appliquée 23 (6), 1047-1054, 1988
55*1988
Epitaxial growth of metallic ErP, ErSb and lattice-matched ErP/sub x/Sb/sub (1-x)/layers on
A Guivarc'h, J Caulet, A Le Corre
Electronics Letters 25 (16), 1050-1052, 1989
511989
1.55-μm polarization-insensitive optical amplifier with strain-balanced superlattice active layer
A Godefroy, A Le Corre, F Clerot, S Salaun, S Loualiche, JC Simon, ...
IEEE photonics technology letters 7 (5), 473-475, 1995
501995
Comparison of InAs quantum dot lasers emitting at 1.55 µm under optical and electrical injection
C Platz, C Paranthoën, P Caroff, N Bertru, C Labbé, J Even, O Dehaese, ...
Semiconductor science and technology 20 (5), 459, 2005
472005
Effects of interface-layers composition and strain distribution on the optical transitions of InAs quantum dots on InP
H Folliot, S Loualiche, B Lambert, V Drouot, A Le Corre
Physical Review B 58 (16), 10700, 1998
471998
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