Effect of thermal annealing and oxygen partial pressure on the swelling of HfO2/SiO2/Si metal-oxide-semiconductor structure grown by rf sputtering: A synchrotron x-ray … D Biswas, SAK Md Faruque, AK Sinha, A Upadhyay, S Chakraborty Applied Physics Letters 105 (11), 2014 | 10 | 2014 |
Effect of N2O ratio on the crystallization temperature of ZrO2 film deposited on Si by reactive sputtering in Ar/O2/N2O plasma SAKM Faruque, RP Giri, S Chakraborty Materials Research Express 3 (11), 116406, 2016 | 3 | 2016 |
Study of temperature dependent zirconium silicide phases in Zr/Si structure by differential scanning calorimetry SAKM Faruque, SR Bhattachryya, AK Sinha, S Chakraborty Journal of Physics D: Applied Physics 49 (6), 065102, 2015 | 3 | 2015 |
Oxidation kinetics of films on Si by differential scanning calorimetry SAKM Faruque, AK Sinha, S Chakraborty Journal of Materials Science: Materials in Electronics 27, 4923-4927, 2016 | 2 | 2016 |
Influence of rapid thermal annealing on electrical performance and reliability of HfO2 based MOS device D Biswas, SAKM Faruque, S Chakraborty AIP Conference Proceedings 1665 (1), 2015 | 2 | 2015 |
Development of a linear temperature ramp-based automated system for furnace oxidation of semiconductor wafers SAKM Faruque, D Biswas, S Saha, S Chakraborty International Journal of Instrumentation Technology 1 (4), 259-269, 2015 | 2 | 2015 |
Crystal growth kinetics of ultra-thin ZrO2 film on Si by differential scanning calorimetry SAKM Faruque, D Debnath, B Giri, S Chakraborty Journal of Crystal Growth 459, 38-42, 2017 | | 2017 |
Differential scanning calorimetry in determining kinetics parameter of Si oxidation SAKM Faruque, S Chakraborty AIP Conference Proceedings 1731 (1), 2016 | | 2016 |
Determination of annealing of temperature metal-oxide-semiconductor devices D Biswas, SAKM Faruque, S Chakraborty AIP Conference Proceedings 1591 (1), 1433-1434, 2014 | | 2014 |
Study of Spuntter Deposited Zr02 Films under different oxidation and annealing conditions SKAKMD FARUQUE Mumbai, 0 | | |