| Nanosheet field effect transistors-A next generation device to keep Moore's law alive: An intensive study J Ajayan, D Nirmal, S Tayal, S Bhattacharya, L Arivazhagan, ASA Fletcher, ... Microelectronics Journal 114, 105141, 2021 | 69 | 2021 |
| Design and analysis of 30 nm T-gate InAlN/GaN HEMT with AlGaN back-barrier for high power microwave applications P Murugapandiyan, S Ravimaran, J William, KM Sundaram Superlattices and Microstructures 111, 1050-1057, 2017 | 38 | 2017 |
| DC and microwave characteristics of Lg 50 nm T-gate InAlN/AlN/GaN HEMT for future high power RF applications P Murugapandiyan, S Ravimaran, J William AEU-International Journal of Electronics and Communications 77, 163-168, 2017 | 32 | 2017 |
| Performance analysis of HfO2/InAlN/AlN/GaN HEMT with AlN buffer layer for high power microwave applications P Murugapandiyan, A Mohanbabu, VR Lakshmi, VN Ramakrishnan, ... Journal of Science: Advanced Materials and Devices 5 (2), 192-198, 2020 | 20 | 2020 |
| Static and dynamic characteristics of Lg 50 nm InAlN/AlN/GaN HEMT with AlGaN back-barrier for high power millimeter wave applications P Murugapandiyan, S Ravimaran, J William Journal of Science: Advanced Materials and Devices 2 (4), 515-522, 2017 | 20 | 2017 |
| Switching transient analysis and characterization of an E-mode B-doped GaN-capped AlGaN DH-HEMT with a freewheeling Schottky barrier diode (SBD) B Subramanian, M Anandan, S Veerappan, M Panneerselvam, M Wasim, ... Journal of Electronic Materials 49, 4091-4099, 2020 | 18 | 2020 |
| DC and microwave characteristics of 20 nm T-gate InAlN/GaN high electron mobility transistor for high power RF applications P Murugapandiyan, S Ravimaran, J William, J Ajayan, D Nirmal Superlattices and Microstructures 109, 725-734, 2017 | 12 | 2017 |
| Investigation of quaternary barrier InAlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors (HEMTs) for high-speed and high-power applications P Murugapandiyan, A Mohanbabu, VR Lakshmi, M Wasim, KM Sundaram Journal of Electronic Materials 49, 524-529, 2020 | 11 | 2020 |
| Investigation of Influence of SiN and SiO2 Passivation in Gate Field Plate Double Heterojunction Al0.3Ga0.7N/GaN/Al0.04Ga0.96N High Electron Mobility … P Murugapandiyan, D Nirmal, J Ajayan, A Varghese, N Ramkumar Silicon, 1-9, 2022 | 10 | 2022 |
| Influence of AlN passivation on thermal performance of AlGaN/GaN high-electron mobility transistors on sapphire substrate: A simulation study P Murugapandiyan, D Nirmal, MT Hasan, A Varghese, J Ajayan, ... Materials Science and Engineering: B 273, 115449, 2021 | 10 | 2021 |
| Breakdown voltage enhancement of gate field plate Al0.295Ga0.705N/GaN HEMTs P Murugapandiyan, MT Hasan, V Rajya Lakshmi, M Wasim, J Ajayan, ... International Journal of Electronics 108 (8), 1273-1287, 2021 | 10 | 2021 |
| Design and development of cross dipole antenna for satellite applications K Malaisamy, M Santhi, S Robinson, M Wasim, P Murugapandiyan Frequenz 74 (7-8), 229-237, 2020 | 10 | 2020 |
| 30 nm T-gate enhancement-mode InAlN/AlN/GaN HEMT on SiC substrates for future high power RF applications P Murugapandiyan, S Ravimaran, J William Journal of Semiconductors 38 (8), 084001, 2017 | 9 | 2017 |
| UWBG AlN/β-Ga2O3 HEMT on Silicon Carbide Substrate for Low Loss Portable Power Converters and RF Applications S Baskaran, M Shunmugathammal, C Sivamani, S Ravi, ... Silicon 14 (17), 11079-11087, 2022 | 8 | 2022 |
| Gan-based high-electron mobility transistors for high-power and high-frequency application: A review P Murugapandiyan, VR Lakshmi, N Ramkumar, P Eswaran, M Wasim Innovations in Electronics and Communication Engineering: Proceedings of the …, 2020 | 8 | 2020 |
| Influence of High-k Passivation Layer on Gate Field Plate AlGaN/GaN/AlGaN Double Heterojunction HEMT R Natarajan, E Parthasarathy, P Murugapandiyan Silicon 14 (16), 10437-10445, 2022 | 7 | 2022 |
| 60 GHz Double Deck T-Gate AlN/GaN/AlGaN HEMT for V-Band Satellites ASA Fletcher, D Nirmal, J Ajayan, L Arivazhagan, KH Hamza, ... Silicon, 1-9, 2021 | 7 | 2021 |
| A comparative analysis of GaN and InGaN/GaN coupling channel HEMTs on silicon carbide substrate for high linear RF applications P Murugapandiyan, SRK Kalva, V Rajyalakshmi, BA Princy, YU Tarauni, ... Micro and Nanostructures 177, 207545, 2023 | 4 | 2023 |
| A 28-GHz Low-Loss AlGaN/GaN HEMT for TX/RX Switches in 5G Base Stations ASA Fletcher, D Nirmal, L Arivazhagan, J Ajayan, MG Raj, KH Hamza, ... Journal of Electronic Materials 51 (3), 1215-1225, 2022 | 4 | 2022 |
| Investigation of ultra-scaled AlN/GaN/InGaN double heterojunction HEMT for high-frequency applications P Murugapandiyan, V Rajya Lakshmi, M Wasim, K Meenakshi Sundaram International Journal of Electronics Letters 8 (4), 472-482, 2020 | 4 | 2020 |
Mohammad WasimAssistant Professor Lovely Professional UniversityVerified email at lpu.co.in
