Samares Kar
Samares Kar
Professor of Electrical Engineering, Indian Institute of Technology, Kanpur
Verified email at iitk.ac.in - Homepage
TitleCited byYear
Interface states in MOS structures with 20–40 ┼ thick SiO2films on nondegenerate Si
S Kar, WE Dahlke
Solid-State Electronics 15 (2), 221-237, 1972
2721972
Enhanced ferromagnetic transition temperature in nanocrystalline lanthanum calcium manganese oxide (La0. 67Ca0. 33MnO3)
KS Shankar, S Kar, GN Subbanna, AK Raychaudhuri
Solid State Communications 129 (7), 479-483, 2004
1102004
Determination of the semiconductor doping profile right up to its surface using the MIS capacitor
K Ziegler, E Klausmann, S Kar
Solid-State Electronics 18 (2), 189-198, 1975
921975
Determination of silicon‐silicon dioxide interface state properties from admittance measurements under illumination
S Kar, S Varma
Journal of Applied Physics 58 (11), 4256-4266, 1985
771985
The influence of the reaction kinetics of O2 and source flow rates on the uniformity of boron and arsenic diffusions
PC Parekh, DR Goldstein, TC Chan
Solid-State Electronics 14 (4), 281-288, 1971
721971
Properties of electronic traps at silicon/1-octadecene interfaces
S Kar, C Miramond, D Vuillaume
Applied Physics Letters 78 (9), 1288-1290, 2001
652001
Fabrication of ordered array of nanowires of in alumina templates with enhanced ferromagnetic transition temperature
KS Shankar, S Kar, AK Raychaudhuri, GN Subbanna
Applied Physics Letters 84 (6), 993-995, 2004
562004
DETERMINATION OF Sj_METAL WORK FUNCTION DIFFERENCES BY MOS CAPACITANCE c
S Kar
Solid-State Electronics 18, 169-181, 1975
551975
Observation of non-gaussian conductance fluctuations at low temperatures in Si: P (B) at the metal-insulator transition
S Kar, AK Raychaudhuri, A Ghosh, H L÷hneysen, G Weiss
Physical review letters 91 (21), 216603, 2003
542003
Extraction of the capacitance of ultrathin high-k gate dielectrics
S Kar
Proceedings of SPIE – The International Society for Optical Engineering 5133á…, 2003
502003
Extraction of the Capacitance of Ultrathin High-K Gate Dielectrics
S Kar
Analytical Techniques for Semiconductor Materials and Processá…, 2002
502002
Characteristics of the Si‐SiO2 interface states in thin (70–230 ┼) oxide structures
S Kar, RL Narasimhan
Journal of Applied Physics 61 (12), 5353-5359, 1987
451987
Electrical characteristics of silicon‐tin oxide heterojunctions prepared by chemical vapor deposition
S Varma, KV Rao, S Kar
Journal of Applied Physics 56 (10), 2812-2822, 1984
421984
Evidence of tunnel‐assisted transport in nondegenerate MOS and semiconductor‐oxide‐semiconductor diodes at room temperature
S Kar, S Ashok, SJ Fonash
Journal of Applied Physics 51 (6), 3417-3421, 1980
421980
Metal‐Dependant Interface States in Thin MOS Structures
S Kar, WE Dahlke
Applied Physics Letters 18 (9), 401-403, 1971
411971
Potentials and direct current in Si-(20 to 40 ┼) SiO2-metal structures
S Kar, WE Dahlke
Solid-State Electronics 15 (8), 869-875, 1972
401972
High permittivity gate dielectric materials
S Kar
Springer, 2013
372013
On the mechanism of carrier transport in metal-thin-oxide semiconductor diodes on Polycrystalline silicon
S Kar, KM Panchal, S Bhattacharya, S Varma
IEEE Transactions on Electron Devices 29 (12), 1839-1845, 1982
361982
On the design and operation of electrochemical solar cells
S Kar, K Rajeshwar, P Singh, J DuBow
Solar Energy 23 (2), 129-139, 1979
321979
Determination of minority carrier lifetime using MIS tunnel diodes
S Kar
Applied Physics Letters 25 (10), 587-589, 1974
291974
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