| Interface states in MOS structures with 20–40 Å thick SiO2films on nondegenerate Si S Kar, WE Dahlke Solid-State Electronics 15 (2), 221-237, 1972 | 300 | 1972 |
| Determination of the semiconductor doping profile right up to its surface using the MIS capacitor K Ziegler, E Klausmann, S Kar Solid-State Electronics 18 (2), 189-198, 1975 | 103 | 1975 |
| High permittivity gate dielectric materials S Kar Springer, 2013 | 98 | 2013 |
| Determination of silicon‐silicon dioxide interface state properties from admittance measurements under illumination S Kar, S Varma Journal of Applied Physics 58 (11), 4256-4266, 1985 | 95 | 1985 |
| Properties of electronic traps at silicon/1-octadecene interfaces S Kar, C Miramond, D Vuillaume Applied Physics Letters 78 (9), 1288-1290, 2001 | 75 | 2001 |
| Characteristics of the Si‐SiO2 interface states in thin (70–230 Å) oxide structures S Kar, RL Narasimhan Journal of Applied Physics 61 (12), 5353-5359, 1987 | 65 | 1987 |
| Determination of Si-metal work function differences by MOS capacitance technique S Kar Solid-State Electronics 18 (2), 169-181, 1975 | 63 | 1975 |
| Extraction of the capacitance of ultrathin high-k gate dielectrics S Kar Proceedings of SPIE – The International Society for Optical Engineering 5133 …, 2003 | 60 | 2003 |
| Extraction of the Capacitance of Ultrathin High-K Gate Dielectrics S Kar Analytical Techniques for Semiconductor Materials and Process …, 2002 | 60 | 2002 |
| On the mechanism of carrier transport in metal-thin-oxide semiconductor diodes on Polycrystalline silicon S Kar, KM Panchal, S Bhattacharya, S Varma IEEE Transactions on Electron Devices 29 (12), 1839-1845, 1982 | 53 | 1982 |
| Potentials and direct current in Si-(20 to 40 Å) SiO2-metal structures S Kar, WE Dahlke Solid-State Electronics 15 (8), 869-875, 1972 | 50 | 1972 |
| Evidence of tunnel‐assisted transport in nondegenerate MOS and semiconductor‐oxide‐semiconductor diodes at room temperature S Kar, S Ashok, SJ Fonash Journal of Applied Physics 51 (6), 3417-3421, 1980 | 49 | 1980 |
| Electrical characteristics of silicon‐tin oxide heterojunctions prepared by chemical vapor deposition S Varma, KV Rao, S Kar Journal of Applied Physics 56 (10), 2812-2822, 1984 | 42 | 1984 |
| Metal‐Dependant Interface States in Thin MOS Structures S Kar, WE Dahlke Applied Physics Letters 18 (9), 401-403, 1971 | 42 | 1971 |
| On the design and operation of electrochemical solar cells S Kar, K Rajeshwar, P Singh, J DuBow Solar Energy 23 (2), 129-139, 1979 | 38 | 1979 |
| Characterization of accumulation layer capacitance for extracting data on high-/spl kappa/gate dielectrics S Kar, S Rawat, S Rakheja, D Reddy IEEE Transactions on Electron Devices 52 (6), 1187-1193, 2005 | 33 | 2005 |
| Determination of minority carrier lifetime using MIS tunnel diodes S Kar Applied Physics Letters 25 (10), 587-589, 1974 | 32 | 1974 |
| Interface charge characteristics of MOS structures with different metals on steam grown oxides S Kar Solid-State Electronics 18 (9), 723-732, 1975 | 28 | 1975 |
| Study of silicon–organic interfaces by admittance spectroscopy S Kar Applied surface science 252 (11), 3961-3967, 2006 | 21 | 2006 |
| On the role of interface states in MOS solar cells S Kar Journal of Applied Physics 49 (10), 5278-5283, 1978 | 21 | 1978 |
