| Incorporation of SnO 2 nanoparticles in PMMA for performance enhancement of a transparent organic resistive memory device PK Sarkar, S Bhattacharjee, M Prajapat, A Roy RSC advances 5 (128), 105661-105667, 2015 | 61 | 2015 |
| Nonvolatile resistive switching and synaptic characteristics of lead-free all-inorganic perovskite-based flexible memristive devices for neuromorphic systems A Siddik, PK Haldar, T Paul, U Das, A Barman, A Roy, PK Sarkar Nanoscale 13 (19), 8864-8874, 2021 | 60 | 2021 |
| Induced Vacancy-Assisted Filamentary Resistive Switching Device Based on RbPbI3–xClx Perovskite for RRAM Application U Das, D Das, B Paul, T Rabha, S Pattanayak, A Kanjilal, S Bhattacharjee, ... ACS Applied Materials & Interfaces 12 (37), 41718-41727, 2020 | 53 | 2020 |
| Compliance current-dependent dual-functional bipolar and threshold resistive switching in all-inorganic rubidium lead-bromide perovskite-based flexible device U Das, A Nyayban, B Paul, A Barman, P Sarkar, A Roy ACS Applied Electronic Materials 2 (5), 1343-1351, 2020 | 51 | 2020 |
| Uniform, large-scale growth of WS2 nanodomains via CVD technique for stable non-volatile RRAM application U Das, S Bhattacharjee, B Mahato, M Prajapat, P Sarkar, A Roy Materials Science in Semiconductor Processing 107, 104837, 2020 | 47 | 2020 |
| Multilevel programming in Cu/NiOy/NiOx/Pt unipolar resistive switching devices PK Sarkar, S Bhattacharjee, A Barman, A Kanjilal, A Roy Nanotechnology 27 (43), 435701, 2016 | 45 | 2016 |
| Electrical reliability, multilevel data storage and mechanical stability of MoS2-PMMA nanocomposite-based non-volatile memory device S Bhattacharjee, PK Sarkar, M Prajapat, A Roy Journal of Physics D: Applied Physics 50 (26), 265103, 2017 | 41 | 2017 |
| Multilevel programming and light-assisted resistive switching in a halide-tunable all-inorganic perovskite cube for flexible memory devices T Paul, PK Sarkar, S Maiti, KK Chattopadhyay ACS Applied Electronic Materials 2 (11), 3667-3677, 2020 | 38 | 2020 |
| Halide perovskite two-terminal analog memristor capable of photo-activated synaptic weight modulation for neuromorphic computing U Das, P Sarkar, B Paul, A Roy Applied Physics Letters 118 (18), 2021 | 37 | 2021 |
| Stable charge retention in graphene-MoS2 assemblies for resistive switching effect in ultra-thin super-flexible organic memory devices S Bhattacharjee, U Das, PK Sarkar, A Roy Organic Electronics 58, 145-152, 2018 | 36 | 2018 |
| Multilevel resistance state of Cu/La2O3/Pt forming-free switching devices PK Sarkar, M Prajapat, A Barman, S Bhattacharjee, A Roy Journal of Materials Science 51, 4411-4418, 2016 | 36 | 2016 |
| A multi-level bipolar memristive device based on visible light sensing MoS2 thin film U Das, S Bhattacharjee, PK Sarkar, A Roy Materials Research Express 6 (7), 075037, 2019 | 34 | 2019 |
| Improvement of the Resistive Switching Characteristics upon Halide Mixing in an All-Inorganic RbPbI3 Perovskite Polymer Composite Based Flexible Device U Das, A Dehingia, B Paul, PK Sarkar, A Roy The Journal of Physical Chemistry C 125 (24), 13610–13618, 2021 | 29 | 2021 |
| Improvement of reliability of polymer nanocomposite based transparent memory device by oxygen vacancy rich ZnO nanorods S Bhattacharjee, PK Sarkar, N Roy, A Roy Microelectronic Engineering 164, 53-58, 2016 | 28 | 2016 |
| Self-organized titanium oxide nano-channels for resistive memory application A Barman, CP Saini, P Sarkar, B Satpati, SR Bhattacharyya, D Kabiraj, ... Journal of Applied Physics 118 (22), 2015 | 25 | 2015 |
| Enhancement of data storage capability in a bilayer oxide-based memristor for wearable electronic applications A Siddik, PK Haldar, P Garu, S Bhattacharjee, U Das, A Barman, A Roy, ... Journal of Physics D: Applied Physics 53 (29), 295103, 2020 | 24 | 2020 |
| Influence of Nanoscale Charge Trapping Layer on the Memory and Synaptic Characteristics of a Novel Rubidium Lead Chloride Quantum Dot Based Memristor AR Ujjal Das,Pranab Kumar Sarkar,Dip Das,Bappi Paul Advanced Electronic Materials, 2022 | 22 | 2022 |
| Resistive switching behavior in oxygen ion irradiated TiO2− x films A Barman, CP Saini, PK Sarkar, G Bhattacharjee, G Bhattacharya, ... Journal of Physics D: Applied Physics 51 (6), 065306, 2018 | 18 | 2018 |
| Solution-processed light-induced multilevel non-volatile wearable memory device based on CsPb2Br5 perovskite KKC Tufan Paul, Pranab Kumar Sarkar, Soumen Maiti,Aditi Sahoo Dalton Transactions, 2022 | 17 | 2022 |
| Copper (II) Phthalocyanine (CuPc) Based Optoelectronic Memory Device with Multilevel Resistive Switching for Neuromorphic Application B Das, M Samanta, P Sarkar, UK Ghorai, A Mallik, KK Chattopadhyay Advanced Electronic Materials 7 (4), 2001079 (1-11), 2021 | 17 | 2021 |
Ujjal DasSERB-NPDF at IISER Pune, Former Postdoc at INST MohaliVerified email at acads.iiserpune.ac.in
