| High-speed and low-power ultradeep-submicrometer III-V heterojunctionless tunnel field-effect transistor PK Asthana, B Ghosh, Y Goswami, BMM Tripathi IEEE Transactions on Electron Devices 61 (2), 479-486, 2014 | 98 | 2014 |
| Improved performance of a junctionless tunnel field effect transistor with a Si and SiGe heterostructure for ultra low power applications PK Asthana, Y Goswami, S Basak, SB Rahi, B Ghosh RSC Advances 5 (60), 48779-48785, 2015 | 39 | 2015 |
| Analog performance of Si junctionless tunnel field effect transistor and its improvisation using III–V semiconductor Y Goswami, B Ghosh, PK Asthana RSC advances 4 (21), 10761-10765, 2014 | 39 | 2014 |
| Optimal design for a high performance H-JLTFET using HfO 2 as a gate dielectric for ultra low power applications PK Asthana, B Ghosh, SBM Rahi, Y Goswami RSC Advances 4 (43), 22803-22807, 2014 | 34 | 2014 |
| Leakage current reduction in junctionless tunnel FET using a lightly doped source S Basak, PK Asthana, Y Goswami, B Ghosh Applied Physics A 118, 1527-1533, 2015 | 30 | 2015 |
| Junctionless tunnel field effect transistor with nonuniform doping Y Goswami, P Asthana, S Basak, B Ghosh International Journal of Nanoscience 14 (03), 1450025, 2015 | 7 | 2015 |
| Nanoscale III–V on Si-based junctionless tunnel transistor for EHF band applications Y Goswami, P Asthana, B Ghosh Journal of Semiconductors 38 (5), 054002, 2017 | 6 | 2017 |
| A novel sub 20 nm single gate tunnel field effect transistor with intrinsic channel for ultra low power applications PK Asthana, Y Goswami, B Ghosh Journal of Semiconductors 37 (5), 054002, 2016 | 5 | 2016 |
| Junctionless tunnel field effect transistor with enhanced performance using III–V semiconductor Y Goswami, BMM Tripathi, P Asthana, B Ghosh Journal of Low Power Electronics 9 (4), 496-500, 2013 | 5 | 2013 |
| Dynamic threshold voltage operation in Si and SiGe source junctionless tunnel field effect transistor S Basak, PK Asthana, Y Goswami, B Ghosh Journal of Semiconductors 35 (11), 114001, 2014 | 4 | 2014 |
| Ultra Thin Body Single Gate Nanoscale Dopingless Si: Ge Heterostructure Junctionless Tunnel Field Effect Transistor PK Asthana, BK Pal, Y Goswami, S Basak, B Ghosh Journal of Advanced Physics 3 (3), 205-208, 2014 | 1 | 2014 |
| A novel uniformly doped barrier modulated ultra-deep-submicron poly-Si thin film transistor with very low subthreshold slope PK Asthana, Y Goswami, S Basak, B Ghosh Semiconductor Science and Technology 29 (7), 075017, 2014 | 1 | 2014 |
| Wrapped Channel FET (WCFET): Future of Low Power Application I Hasan, PK Asthana, Y Goswami, SAM Rizvi International Journal of Electronics, Communications, and Measurement …, 2022 | | 2022 |
