| Desorption kinetics of GeO from GeO2/Ge structure SK Wang, K Kita, CH Lee, T Tabata, T Nishimura, K Nagashio, A Toriumi Journal of applied physics 108 (5), 2010 | 209 | 2010 |
| Ge MOSFETs performance: Impact of Ge interface passivation CH Lee, T Nishimura, T Tabata, SK Wang, K Nagashio, K Kita, A Toriumi 2010 International Electron Devices Meeting, 18.1. 1-18.1. 4, 2010 | 107 | 2010 |
| High-Electron-Mobility Ge n-Channel Metal--Oxide--Semiconductor Field-Effect Transistors with High-Pressure Oxidized Y2O3 T Nishimura, CH Lee, T Tabata, SK Wang, K Nagashio, K Kita, A Toriumi Applied physics express 4 (6), 4201, 2011 | 96 | 2011 |
| Isotope tracing study of GeO desorption mechanism from GeO2/Ge stack using 73Ge and 18O SK Wang, K Kita, T Nishimura, K Nagashio, A Toriumi Japanese Journal of Applied Physics 50 (4), 04DA01, 2011 | 67 | 2011 |
| Material potential and scalability challenges of germanium CMOS A Toriumi, CH Lee, SK Wang, T Tabata, M Yoshida, DD Zhao, ... 2011 International Electron Devices Meeting, 28.4. 1-28.4. 4, 2011 | 58 | 2011 |
| Kinetic study of GeO disproportionation into a GeO2/Ge system using x-ray photoelectron spectroscopy S Kai Wang, HG Liu, A Toriumi Applied Physics Letters 101 (6), 2012 | 56 | 2012 |
| Comprehensive study of GeO2 oxidation, GeO desorption and GeO2-metal interaction -understanding of Ge processing kinetics for perfect interface control- K Kita, SK Wang, M Yoshida, CH Lee, K Nagashio, T Nishimura, ... 2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009 | 35 | 2009 |
| Kinetic Effects of O-Vacancy Generated by GeO2/Ge Interfacial Reaction SK Wang, K Kita, T Nishimura, K Nagashio, A Toriumi Japanese Journal of Applied Physics 50 (10), 2011 | 28 | 2011 |
| Observation of Dipole Layer Formed at High-k Dielectrics/SiO2 Interface with X-ray Photoelectron Spectroscopy LQ Zhu, K Kita, T Nishimura, K Nagashio, SK Wang, A Toriumi Applied Physics Express, Volume 3, Issue 6, pp. 061501-061501-3 (2010). 3 (6 …, 2010 | 28 | 2010 |
| Interfacial dipole at high-k dielectric/SiO2 interface: X-ray photoelectron spectroscopy characteristics LQ Zhu, K Kita, T Nishimura, K Nagashio, SK Wang, A Toriumi Japanese journal of applied physics 50 (3R), 031502, 2011 | 27 | 2011 |
| Enhanced performance of GaN-based light-emitting diodes by using Al mirror and atomic layer deposition-TiO2/Al2O3 distributed Bragg reflector backside reflector with patterned … H Chen, H Guo, P Zhang, X Zhang, H Liu, S Wang, Y Cui Applied Physics Express 6 (2), 022101, 2013 | 23 | 2013 |
| The impact of HCl precleaning and sulfur passivation on the Al2O3/Ge interface in Ge metal-oxide-semiconductor capacitors BQ Xue, HD Chang, B Sun, SK Wang, HG Liu Chinese Physics Letters 29 (4), 046801, 2012 | 22 | 2012 |
| Al2O3/GeOx gate stack on germanium substrate fabricated by in situ cycling ozone oxidation method X Yang, SK Wang, X Zhang, B Sun, W Zhao, HD Chang, ZH Zeng, H Liu Applied Physics Letters 105 (9), 2014 | 20 | 2014 |
| (Invited) Oxidation, Diffusion and Desorption in a Ge/GeO2 System A Toriumi, S Wang, CH Lee, M Yoshida, K Kita, T Nishimura, K Nagashio ECS Transactions 28 (2), 171-180, 2010 | 20 | 2010 |
| Reducing the interface trap density in Al2O3/InP stacks by low-temperature thermal process SK Wang, M Cao, B Sun, H Li, H Liu Applied Physics Express 8 (9), 091201, 2015 | 18 | 2015 |
| Effect of the Si-doped In0. 49Ga0. 51P barrier layer on the device performance of In0. 4Ga0. 6As MOSFETs grown on semi-insulating GaAs substrates HD Chang, B Sun, BQ Xue, GM Liu, W Zhao, SK Wang, HG Liu Chinese Physics B 22 (7), 077306, 2013 | 18 | 2013 |
| Room temperature wafer bonding by surface activated ALD-Al2O3 Y Li, S Wang, B Sun, H Chang, W Zhao, X Zhang, H Liu ECS Transactions 50 (7), 303, 2013 | 18 | 2013 |
| Remote interfacial dipole scattering and electron mobility degradation in Ge field-effect transistors with GeOx/Al2O3 gate dielectrics X Wang, J Xiang, S Wang, W Wang, C Zhao, T Ye, Y Xiong, J Zhang Journal of Physics D: Applied Physics 49 (25), 255104, 2016 | 16 | 2016 |
| An air-plasma enhanced low-temperature wafer bonding method using high-concentration water glass adhesive layer Y Xu, SK Wang, P Yao, Y Wang, D Chen Applied Surface Science 500, 144007, 2020 | 15 | 2020 |
| High-performance GaN-based light-emitting diodes on patterned sapphire substrate with a novel patterned SiO2/Al2O3 passivation layer H Guo, X Zhang, H Chen, H Liu, P Zhang, Q Liao, S Hu, H Chang, B Sun, ... Applied Physics Express 6 (7), 072103, 2013 | 15 | 2013 |
