Veerendra Dhyani
Veerendra Dhyani
CARE IIT Delhi, Trinity College Dublin, IMRE A*STAR
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High-speed scalable silicon-MoS2 PN heterojunction photodetectors
V Dhyani, S Das
Scientific reports 7 (1), 1-9, 2017
Self-powered room temperature broadband infrared photodetector based on MoSe2/germanium heterojunction with 35 A/W responsivity at 1550 nm
V Dhyani, M Das, W Uddin, PK Muduli, S Das
Applied Physics Letters 114 (12), 2019
Broadband infrared photodetector based on nanostructured MoSe2–Si heterojunction extended up to 2.5 μm spectral range
JW John, V Dhyani, S Maity, S Mukherjee, SK Ray, V Kumar, S Das
Nanotechnology 31 (45), 455208, 2020
Optically Pumped Broadband Terahertz Modulator Based on Nanostructured PtSe2 Thin Films
A Jakhar, P Kumar, A Moudgil, V Dhyani, S Das
Advanced Optical Materials 8 (7), 1901714, 2020
High performance broadband photodetector based on MoS2/porous silicon heterojunction
V Dhyani, P Dwivedi, S Dhanekar, S Das
Applied Physics Letters 111 (19), 2017
High speed efficient ultraviolet photodetector based on 500 nm width multiple WO3 nanowires
A Moudgil, V Dhyani, S Das
Applied Physics Letters 113 (10), 2018
Low-noise, high-detectivity, polarization-sensitive, room-temperature infrared photodetectors based on Ge quantum dot-decorated Si-on-insulator nanowire field-effect transistors
JW John, V Dhyani, S Singh, A Jakhar, A Sarkar, S Das, SK Ray
Nanotechnology 32 (31), 315205, 2021
High speed MSM photodetector based on Ge nanowires network
V Dhyani, S Das
Semiconductor Science and Technology 32 (5), 055008, 2017
Size-dependent photoresponse of germanium nanocrystals-metal oxide semiconductor photodetector
V Dhyani, G Ahmad, N Kumar, S Das
IEEE Transactions on Electron Devices 67 (2), 558-565, 2020
Integration of Nanometer-Thick 1T-TaS2 Films with Silicon for an Optically Driven Wide-Band Terahertz Modulator
A Jakhar, P Kumar, S Husain, V Dhyani, S Das
ACS Applied Nano Materials 3 (11), 10767-10777, 2020
High sensitivity silicon single nanowire junctionless phototransistor
S Das, V Dhyani, YM Georgiev, DA Williams
Applied Physics Letters 108 (6), 2016
Diameter-dependent photoresponse with high internal gain in a back gated single Si nanowire phototransistor
V Dhyani, A Jakhar, S Das
Journal of Physics D: Applied Physics 52 (42), 425103, 2019
Ultrahigh negative infrared photoconductance in highly As-doped germanium nanowires induced by hot electron trapping
JW John, V Dhyani, YM Georgiev, AS Gangnaik, S Biswas, JD Holmes, ...
ACS Applied Electronic Materials 2 (7), 1934-1942, 2020
Room temperature terahertz detector based on single silicon nanowire junctionless transistor with high detectivity
A Jakhar, V Dhyani, S Das
Semiconductor Science and Technology 35 (12), 125020, 2020
Temperature dependent current transport behavior of improved low noise NiGe schottky diodes for low leakage Ge-MOSFET
W Uddin, MS Pasha, V Dhyani, S Maity, S Das
Semiconductor Science and Technology 34 (3), 035026, 2019
Bilayer MoS2 on silicon for higher terahertz amplitude modulation
A Jakhar, P Kumar, S Husain, V Dhyani, A Chouksey, PK Rai, JS Rawat, ...
Nano Express 2 (4), 040004, 2021
Low cost flexible 1.1 μm-1.6 μm photodetector fabricated by hydrothermal grown large area MoSe2 nanostructures
V Dhyani, P Kumari, S Maity, S Das
Optical Sensors 2019 11028, 396-404, 2019
Sidewall Transfer Patterning-Based Nano-Crystalline MoS2 Sensing Element for Stress and Optical MEMS Sensor
V Rana, A Singh, A Ramesh, V Dhyani, S Das, P Singh
2019 IEEE 32nd International Conference on Micro Electro Mechanical Systems …, 2019
CMOS-compatible photonic integrated circuits on thin-film ScAlN
S Wang, V Dhyani, SS Mohanraj, X Shi, B Varghese, WW Chung, ...
APL Photonics 9 (6), 2024
Black-arsenic/germanium-on-insulator heterostructure field effect transistor for ultrafast polarization sensitive short-wave infrared photodetection
JW John, V Dhyani, A Jakhar, HK Sandhu, S Dewan, SK Ray, S Das
IEEE Electron Device Letters 43 (9), 1495-1498, 2022
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