| GeSn/Ge heterostructure short-wave infrared photodetectors on silicon A Gassenq, F Gencarelli, J Van Campenhout, Y Shimura, R Loo, G Narcy, ... Optics express 20 (25), 27297-27303, 2012 | 221 | 2012 |
| Germanium-on-silicon mid-infrared arrayed waveguide grating multiplexers A Malik, M Muneeb, S Pathak, Y Shimura, J Van Campenhout, R Loo, ... IEEE Photonics Technology Letters 25 (18), 1805-1808, 2013 | 176 | 2013 |
| Growth of highly strain-relaxed Ge1− xSnx/virtual Ge by a Sn precipitation controlled compositionally step-graded method S Takeuchi, Y Shimura, O Nakatsuka, S Zaima, M Ogawa, A Sakai Applied physics letters 92 (23), 2008 | 160 | 2008 |
| Characterization of GeSn materials for future Ge pMOSFETs source/drain stressors B Vincent, Y Shimura, S Takeuchi, T Nishimura, G Eneman, A Firrincieli, ... Microelectronic Engineering 88 (4), 342-346, 2011 | 156 | 2011 |
| Silicon-based photonic integration beyond the telecommunication wavelength range G Roelkens, UD Dave, A Gassenq, N Hattasan, C Hu, B Kuyken, F Leo, ... IEEE Journal of Selected Topics in Quantum Electronics 20 (4), 394-404, 2014 | 146 | 2014 |
| Ge-on-Si and Ge-on-SOI thermo-optic phase shifters for the mid-infrared A Malik, S Dwivedi, L Van Landschoot, M Muneeb, Y Shimura, G Lepage, ... Optics express 22 (23), 28479-28488, 2014 | 134 | 2014 |
| Mobility behavior of Ge1-xSnx layers grown on silicon-on-insulator substrates O Nakatsuka, N Tsutsui, Y Shimura, S Takeuchi, A Sakai, S Zaima Japanese Journal of Applied Physics 49 (4S), 04DA10, 2010 | 111 | 2010 |
| Low temperature growth of Ge1− xSnx buffer layers for tensile–strained Ge layers Y Shimura, N Tsutsui, O Nakatsuka, A Sakai, S Zaima Thin Solid Films 518 (6), S2-S5, 2010 | 108 | 2010 |
| Germanium-on-silicon planar concave grating wavelength (de) multiplexers in the mid-infrared A Malik, M Muneeb, Y Shimura, J Van Campenhout, R Loo, G Roelkens Applied Physics Letters 103 (16), 2013 | 91 | 2013 |
| Silicon-based heterogeneous photonic integrated circuits for the mid-infrared G Roelkens, U Dave, A Gassenq, N Hattasan, C Hu, B Kuyken, F Leo, ... Optical Materials Express 3 (9), 1523-1536, 2013 | 88 | 2013 |
| Strained Germanium quantum well pMOS FinFETs fabricated on in situ phosphorus-doped SiGe strain relaxed buffer layers using a replacement Fin process L Witters, J Mitard, R Loo, G Eneman, H Mertens, DP Brunco, SH Lee, ... 2013 IEEE International Electron Devices Meeting, 20.4. 1-20.4. 4, 2013 | 58 | 2013 |
| Control of Sn precipitation and strain relaxation in compositionally step-graded Ge1-xSnx buffer layers for tensile-strained ge layers Y Shimura, N Tsutsui, O Nakatsuka, A Sakai, S Zaima Japanese Journal of Applied Physics 48 (4S), 04C130, 2009 | 54 | 2009 |
| Growth of Ge1− xSnx heteroepitaxial layers with very high Sn contents on InP (001) substrates M Nakamura, Y Shimura, S Takeuchi, O Nakatsuka, S Zaima Thin Solid Films 520 (8), 3201-3205, 2012 | 49 | 2012 |
| Ge1− xSnx stressors for strained-Ge CMOS S Takeuchi, Y Shimura, T Nishimura, B Vincent, G Eneman, T Clarysse, ... Solid-State Electronics 60 (1), 53-57, 2011 | 49 | 2011 |
| Molecular beam deposition of Al2O3 on p-Ge (001)/Ge0. 95Sn0. 05 heterostructure and impact of a Ge-cap interfacial layer C Merckling, X Sun, Y Shimura, A Franquet, B Vincent, S Takeuchi, ... Applied Physics Letters 98 (19), 2011 | 41 | 2011 |
| Formation of Ni (Ge1− xSnx) layers with solid-phase reaction in Ni/Ge1− xSnx/Ge systems T Nishimura, O Nakatsuka, Y Shimura, S Takeuchi, B Vincent, ... Solid-State Electronics 60 (1), 46-52, 2011 | 40 | 2011 |
| Effect of Zn doping in CuO octahedral crystals towards structural, optical, and gas sensing properties CP Goyal, D Goyal, S K. Rajan, NS Ramgir, Y Shimura, M Navaneethan, ... Crystals 10 (3), 188, 2020 | 39 | 2020 |
| Enhanced photon collection of high surface area carbonate-doped mesoporous TiO2 nanospheres in dye sensitized solar cells RS Ganesh, M Navaneethan, S Ponnusamy, C Muthamizhchelvan, ... Materials Research Bulletin 101, 353-362, 2018 | 39 | 2018 |
| Extended X-ray absorption fine structure investigation of Sn local environment in strained and relaxed epitaxial Ge1− xSnx films F Gencarelli, D Grandjean, Y Shimura, B Vincent, D Banerjee, ... Journal of Applied Physics 117 (9), 2015 | 37 | 2015 |
| Development of epitaxial growth technology for Ge1− xSnx alloy and study of its properties for Ge nanoelectronics O Nakatsuka, Y Shimura, W Takeuchi, N Taoka, S Zaima Solid-state electronics 83, 82-86, 2013 | 37 | 2013 |
