| Low noise wide bandgap SiC based IMPATT diodes at sub-millimeter wave frequencies and at high temperature J Pradhan, SR Pattanaik, SK Swain, GN Dash Journal of Semiconductors 35 (3), 034001-6, 2014 | 6 | 2014 |
| Competence of 4H-SiC IMPATT diode for terahertz application. GND J Pradhan,S K Swain, S R Pattanaik Asian Journal of Physics 21 (2), 179-186, 2012 | 5* | 2012 |
| Potentials of GaP as millimeter wave IMPATT diode with reference to Si, GaAs and GaN J Pradhan, SK Swain, SR Pattnaik, GN Dash Journal of Infrared and Millimeter Waves 38 (4), 395-402, 2019 | 4 | 2019 |
| Identification of electron and hole ionization rates in GaAs with reference to IMPATT Diode J Pradhan, SK Swain, SR Pattanaik, GN Dash IOSR J Appl Phys 2 (1), 24, 2012 | 3 | 2012 |
| Influence of small variation in impact ionization rate data on simulation of 4H-SiC IMPATT SR Pattanaik, J Pradhan, SK Swain, P Panda, GN Dash 16th International Workshop on Physics of Semiconductor Devices 8549, 59-64, 2012 | 2 | 2012 |
| Terahertz properties of GaN/AlGaN heterostructure IMPATT diode SK Swain, SR Pattanaik, J Pradhan, GN Dash The Physics of Semiconductor Devices: Proceedings of IWPSD 2017, 285-288, 2019 | 1 | 2019 |
| A sensitivity analysis of millimeter wave characteristics of SiC IMPATT diodes SK Swain, J Pradhan, GN Dash, SR Pattanaik Journal of Semiconductors 38 (6), 064003, 2017 | 1 | 2017 |
| Realization of high efficiency 4H-SiC IMPATT diode using optimized doping steps GN Dash, J Pradhan, SK Swain, SR Pattanaik 2013 IEEE International Conference of Electron Devices and Solid-State …, 2013 | 1 | 2013 |
| Comparison of 4H-SiC over wurtzite-GaN for IMPATT applications at 140 GHz SR Pattanaik, J Pradhan, PR Tripathy, GN Dash 2007 International Workshop on Physics of Semiconductor Devices, 391-391, 2007 | 1 | 2007 |
| IMPATT Diodes Based on GaAs for Millimeter Wave Applications with Reference to Si J Pradhan, SR Pattanaik Post-Transition Metals, 2021 | | 2021 |
| Effect of Junction Temperature on the Microwave Properties of IMPATT Diodes J Pradhan, SR Pattanaik, SK Swain, GN Dash Physics of Semiconductor Devices: 17th International Workshop on the Physics …, 2014 | | 2014 |
| Microwave Characteristics of SiC IMPATT Diodes at 220 GHz SR Pattanaik, J Pradhan, SK Swain, GN Dash Physics of Semiconductor Devices: 17th International Workshop on the Physics …, 2014 | | 2014 |
| Studies on the effect of increase in band gap of base semiconductor on the millimeter wave properties of avalanche transit time diodes J Pradhan Sambalpur, 0 | | |
Satya Ranjan PattanaikProfessorVerified email at gift.edu.in
