| Design and Performance Analysis of Tunnel Field Effect Transistor With Buried Strained Si1−xGex Source Structure Based Biosensor for Sensitivity Enhancement A Anam, S Anand, SI Amin IEEE Sensors Journal 20 (22), 13178-13185, 2020 | 54 | 2020 |
| Charge-plasma based symmetrical-gate complementary electron–hole bilayer TFET with improved performance for sub-0.5 V operation A Anam, N Kumar, SI Amin, D Prasad, S Anand Semiconductor Science and Technology 38 (1), 015012, 2022 | 10 | 2022 |
| Charge-plasma-based inverted T-shaped source-metal dual-line tunneling FET with improved performance at 0.5 V operation A Anam, SI Amin, D Prasad, N Kumar, S Anand Physica Scripta 98 (9), 095918, 2023 | 9 | 2023 |
| Design and analysis of GaSb/Si based negative capacitance TFET at the device and circuit level M Anas, SI Amin, MT Beg, A Anam, A Chunn, S Anand Silicon 14 (17), 11951-11961, 2022 | 9 | 2022 |
| Analysis of III-V material-based dual source T-channel junction-less TFET with metal implant for improved DC and RF performance A Anam, SI Amin, D Prasad, N Kumar, S Anand Micro and Nanostructures 181, 207629, 2023 | 7 | 2023 |
| Simulation study and comparative analysis of proposed novel hybrid DG-TFET with conventional TFETs structures for improved performance A Anam, SI Amin, D Prasad 2021 IEEE International Symposium on Smart Electronic Systems (iSES), 311-315, 2021 | 3 | 2021 |
| Undoped vertical dual-bilayer TFET with a super-steep sub-threshold swing: proposal and performance comparative analysis A Anam, SI Amin, D Prasad, N Kumar, S Anand Semiconductor Science and Technology 38 (7), 075005, 2023 | 2 | 2023 |
| Effect of ambipolarity suppression in PNPN TFET with dopant segregated Schottky-drain technique A Anam, SI Amin, D Prasad, N Kumar, S Anand Microelectronics Journal 145, 106116, 2024 | 1 | 2024 |
| Exploring Intertwined Quantum and Cryogenic Behaviour in Ultra-Scaled 10nm MOSFET: A NEGF Quantum Ballistic Simulation A Anam, SI Amin, D Prasad Physica Scripta, 2024 | | 2024 |
| InSb Source-Based Heterojunctionless Nanowire Tunneling FET for Biosensing Application: Design and Analysis A Anam, SI Amin, D Prasad 2024 IEEE International Conference on Interdisciplinary Approaches in …, 2024 | | 2024 |
| Performance Analysis of InSb Source-Based Heterojunctionless Nanowire TFET for Low-Power Application: Design and Simulation A Anam, SI Amin, D Prasad 2024 IEEE International Conference on Interdisciplinary Approaches in …, 2024 | | 2024 |
| Temperature Sensitivity and Reliability Study of Symmetrical U-Shaped Gate Line TFET: RF/Analog and Linearity Performance Analysis A Anam, SI Amin, D Prasad 2023 IEEE International Symposium on Smart Electronic Systems (iSES), 99-104, 2023 | | 2023 |
| Novel Iii-V Inverted T-Channel Tfet with Dual-Gate Impact on Line Tunneling, with and Without Negative Capacitance A Anam, SI Amin, D Prasad Available at SSRN 4803057, 0 | | |
| 2023 IEEE International Symposium on Smart Electronic Systems (iSES)| 979-8-3503-8324-9/23/$31.00© 2023 IEEE| DOI: 10.1109/ISES58672. 2023.00102 SE Ahmed, UC Akuthota, A Alkinani, MN Alruwaill, J Amendola, SI Amin, ... | | |
| Raised Ge-Source with N+ Pocket and Recessed Drain Line Tfet: A Proposal for Biosensing Applications A Anam, SI Amin, D Prasad Available at SSRN 4525392, 0 | | |
| 2021 IEEE International Symposium on Smart Electronic Systems (iSES)| 978-1-7281-8753-2/21/$31.00© 2021 IEEE| DOI: 10.1109/iSES52644. 2021.00108 NO Adesina, S Agrawal, R Ahmad, SE Ahmed, J Akasam, A Alghamdi, ... | | |
Dr. S.Intekhab AminJamia Millia IslamiaVerified email at jmi.ac.in
