| A Dual Core Source/Drain GAA FinFET PS Das, D Deb, R Goswami, S Sharma, R Saha, H Choudhury Revista Tecnología en Marcha, ág 5-11, 2023 | 3 | 2023 |
| Mobility effects due to doping, temperature and interface traps in gate-all-around FinFETs PS Das, D Nath, D Deb, P Pathak, H Choudhury, R Goswami Microsystem Technologies, 1-13, 2024 | | 2024 |
| Incomplete Ionization-Dependent Carrier Mobility in Silicon-on-Insulator n-p-n Double-Gate Tunnel Field-Effect Transistors P Pathak, D Deb, D Nath, PS Das, H Choudhury, R Goswami Journal of Electronic Materials, 1-19, 2024 | | 2024 |
| Memristors as Prospective Devices for Silicon and Post-silicon Eras: theory, applications and perspectives H Choudhury, R Goswami, G Kumar, NM Kakoty Nanoelectronic Devices and Application 1, 2024 | | 2024 |
| Flatband Voltage in MOS Structures for Spatial Fixed Oxide Charge Distributions P Hazarika, M Ray, A Hazarika, D Deb, PS Das, H Choudhury, R Goswam Jornal of Materials Science: Materials in Electronics 34 (1242), 2023 | | 2023 |
| Impact of Doping and Temperature on Mobility in Single and Dual Core S/D GAA FinFETs D Nath, D Deb, PS Das, H Choudhury, P Pathak, R Goswami 2023 IEEE Devices for Integrated Circuit (DevIC), 392-395, 2023 | | 2023 |
| A Single Memristor-based TTL NOT logic H Choudhury, S Paul, D Deb, PS Das, R Goswami Tecnología en Marcha 36 (2), 88-94, 2023 | | 2023 |
Rupam GoswamiAssistant Professor, Department of Electronics and Communication Engineering, Tezpur UniversityVerified email at tezu.ernet.in
