| Exceptional Responsivity (>6 kA/W) and Dark Current (<70 fA) Tradeoff of n-Ga2O3/p-CuO Quasi-Heterojunction-Based Deep UV Photodetector A Kumar, A Nandi, A Bag IEEE Transactions on Electron Devices 68 (1), 144-151, 2020 | 25 | 2020 |
| Design and Analysis of P-GaN/N-Ga2O3 Based Junction Barrier Schottky Diodes A Nandi, KS Rana, A Bag IEEE Transactions on Electron Devices 68 (12), 2021 | 11 | 2021 |
| Broad Range (254–302 nm) and High Performance Ga2O3:SnO2 Based Deep UV Photodetector A Mondal, S Nandi, MK Yadav, A Nandi, A Bag IEEE Transactions on Nanotechnology 21, 320-327, 2022 | 8 | 2022 |
| Epitaxial Growth of (−201) β-Ga2O3 on (001) Diamond Substrates A Nandi, D Cherns, I Sanyal, M Kuball Crystal Growth & Design 23 (11), 8290-8295, 2023 | 4 | 2023 |
| Ultra-wide bandgap Ga2O3 technologies: benefits of heterogenous integration A Mishra, A Nandi, I Sanyal, Z Abdallah, JW Pomeroy, M Kuball Oxide-based Materials and Devices XIV 12422, 31-35, 2023 | 2 | 2023 |
| Heterogenous integration of gallium oxide with diamond and SiC A Nandi, I Sanyal, A Petkov, JW Pomeroy, D Cherns, M Kuball Oxide-based Materials and Devices XV 12887, 61-65, 2024 | | 2024 |
| Selective Area Growth of β-Ga2O3 A Nandi, I Sanyal, M Kuball 2023 International Conference on Compound Semiconductor Manufacturing …, 2023 | | 2023 |
Ankush BagIndian Institute of Technology GuwahatiVerified email at iitg.ac.in
