Tianyi Zhang
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Tunable Fano Resonance and Plasmon–Exciton Coupling in Single Au Nanotriangles on Monolayer WS2 at Room Temperature
M Wang, A Krasnok, T Zhang, L Scarabelli, H Liu, Z Wu, LM Liz‐Marzán, ...
Advanced Materials 30 (22), 1705779, 2018
Wafer-Scale Epitaxial Growth of Unidirectional WS2 Monolayers on Sapphire
M Chubarov, TH Choudhury, DR Hickey, S Bachu, T Zhang, A Sebastian, ...
ACS nano 15 (2), 2532-2541, 2021
Carbon doping of WS2 monolayers: Bandgap reduction and p-type doping transport
F Zhang, Y Lu, DS Schulman, T Zhang, K Fujisawa, Z Lin, Y Lei, AL Elias, ...
Science advances 5 (5), eaav5003, 2019
Angstrom-Size Defect Creation and Ionic Transport through Pores in Single-Layer MoS2
JP Thiruraman, K Fujisawa, G Danda, PM Das, T Zhang, A Bolotsky, ...
Nano letters 18 (3), 1651-1659, 2018
Monolayer vanadium‐doped tungsten disulfide: a room‐temperature dilute magnetic semiconductor
F Zhang, B Zheng, A Sebastian, DH Olson, M Liu, K Fujisawa, YTH Pham, ...
Advanced Science 7 (24), 2001174, 2020
Defect-Controlled Nucleation and Orientation of WSe2 on hBN: A Route to Single-Crystal Epitaxial Monolayers
X Zhang, F Zhang, Y Wang, DS Schulman, T Zhang, A Bansal, N Alem, ...
ACS nano 13 (3), 3341-3352, 2019
Monolayer WS2 Nanopores for DNA Translocation with Light-Adjustable Sizes
G Danda, P Masih Das, YC Chou, JT Mlack, WM Parkin, CH Naylor, ...
ACS nano 11 (2), 1937-1945, 2017
Ultrasensitive Pressure Detection of Few-Layer MoS2.
F Yu, Q Liu, X Gan, M Hu, T Zhang, C Li, F Kang, M Terrones, R Lv
Advanced Materials (Deerfield Beach, Fla.) 29 (4), 2016
Universal In Situ Substitutional Doping of Transition Metal Dichalcogenides by Liquid-Phase Precursor-Assisted Synthesis
T Zhang, K Fujisawa, F Zhang, M Liu, MC Lucking, RN Gontijo, Y Lei, ...
ACS nano 14 (4), 4326-4335, 2020
Tunable Resonance Coupling in Single Si Nanoparticle–Monolayer WS2 Structures
S Lepeshov, M Wang, A Krasnok, O Kotov, T Zhang, H Liu, T Jiang, ...
ACS applied materials & interfaces 10 (19), 16690-16697, 2018
Low-thermal-budget synthesis of monolayer molybdenum disulfide for silicon back-end-of-line integration on a 200 mm platform
J Zhu, JH Park, SA Vitale, W Ge, GS Jung, J Wang, M Mohamed, T Zhang, ...
Nature Nanotechnology 18 (5), 456-463, 2023
Highly conductive, twistable and bendable polypyrrole–carbon nanotube fiber for efficient supercapacitor electrodes
R Xu, J Wei, F Guo, X Cui, T Zhang, H Zhu, K Wang, D Wu
RSC Advances 5 (28), 22015-22021, 2015
Transfer of monolayer TMD WS2 and Raman study of substrate effects
JT Mlack, P Masih Das, G Danda, YC Chou, CH Naylor, Z Lin, NP López, ...
Scientific Reports 7 (1), 43037, 2017
Spontaneous chemical functionalization via coordination of Au single atoms on monolayer MoS2
H Liu, D Grasseschi, A Dodda, K Fujisawa, D Olson, E Kahn, F Zhang, ...
Science advances 6 (49), eabc9308, 2020
Graphene and beyond: recent advances in two-dimensional materials synthesis, properties, and devices
Y Lei, T Zhang, YC Lin, T Granzier-Nakajima, G Bepete, DA Kowalczyk, ...
ACS Nanoscience Au 2 (6), 450-485, 2022
High-energy-density, all-solid-state microsupercapacitors with three-dimensional interdigital electrodes of carbon/polymer electrolyte composite
J Pu, X Wang, T Zhang, S Li, J Liu, K Komvopoulos
Nanotechnology 27 (4), 045701, 2015
Quantification and healing of defects in atomically thin molybdenum disulfide: beyond the controlled creation of atomic defects
K Fujisawa, BR Carvalho, T Zhang, N Perea-Lopez, Z Lin, V Carozo, ...
ACS nano 15 (6), 9658-9669, 2021
Clean transfer of 2D transition metal dichalcogenides using cellulose acetate for atomic resolution characterizations
T Zhang, K Fujisawa, T Granzier-Nakajima, F Zhang, Z Lin, E Kahn, ...
ACS Applied Nano Materials 2 (8), 5320-5328, 2019
Electrochemical polishing of two-dimensional materials
A Sebastian, F Zhang, A Dodda, D May-Rawding, H Liu, T Zhang, ...
ACS nano 13 (1), 78-86, 2018
Nonlinear dark-field imaging of one-dimensional defects in monolayer dichalcogenides
BR Carvalho, Y Wang, K Fujisawa, T Zhang, E Kahn, I Bilgin, PM Ajayan, ...
Nano letters 20 (1), 284-291, 2019
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