| CuO@ NiO/Polyaniline/MWCNT nanocomposite as high-performance electrode for supercapacitor I Chakraborty, N Chakrabarty, A Senapati, AK Chakraborty The Journal of Physical Chemistry C 122 (48), 27180-27190, 2018 | 111 | 2018 |
| Resistive switching memory and artificial synapse by using Ti/MoS2 based conductive bridging cross-points M Dutta, A Senapati, S Ginnaram, S Maikap Vacuum 176, 109326, 2020 | 19 | 2020 |
| Flowerlike Fe2O3–polyaniline nanocomposite as electrode for supercapacitor A Senapati, AK Chakraborty Journal of Materials Science: Materials in Electronics 32 (23), 27794-27800, 2021 | 12 | 2021 |
| Switching Characteristics and Mechanism Using Al2O3 Interfacial Layer in Al/Cu/GdOx/Al2O3/TiN Memristor CF Chiu, S Ginnaram, A Senapati, YP Chen, S Maikap Electronics 9 (9), 1466, 2020 | 9 | 2020 |
| Oxide-Electrolyte Thickness Dependence Diode-Like Threshold Switching and High on/off Ratio Characteristics by Using Al2O3 Based CBRAM A Senapati, S Roy, YF Lin, M Dutta, S Maikap Electronics 9 (7), 1106, 2020 | 9 | 2020 |
| Superlattice HfO2-ZrO2 based Ferro-Stack HfZrO2 FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 109 cycles for Multibit NVM MHL C-Y Liao, Z-F Lou, C-Y Lin, A Senapati, R Karmakar, K-Y Hsiang, Z-X Li ... 2022 International Electron Devices Meeting (IEDM), 36.6. 1-36.6. 4, 2022 | 6 | 2022 |
| Ruthenium based RRAM for low variability switching and scaling for contemporary computing systems M Seal, A Deogaonkar, A Senapati, S Maikap, N Raghavan Microelectronics Reliability 138, 114623, 2022 | 1 | 2022 |
| Robust resistive switching characteristics of AlOx CBRAM using simple and cost-effective thermal evaporation process A Deogaonkar, M Seal, A Senapati, S Ginnaram, A Ranjan, S Maikap, ... Microelectronics Reliability 138, 114765, 2022 | 1 | 2022 |
| MoS2 based CBRAM with Mo/Ti barrier layer for artificial synapse application A Senapati, S Ginnaram, M Dutta, S Maikap 2020 International Symposium on VLSI Technology, Systems and Applications …, 2020 | 1 | 2020 |
| Ru conducting filament based cross-point resistive switching memory for future low power operation S Maikap, A Senapati 2020 IEEE Silicon Nanoelectronics Workshop (SNW), 93-94, 2020 | 1 | 2020 |
| Low Polarization Loss of Long Endurance on Scavenged Ru-Based Electrode Ferroelectric Hf0.5Zr0.5O2 by Optimizing TiNx Interfacial Capping Layer and Its … A Senapati, ZF Lou, JY Lee, YP Chen, SY Huang, S Maikap, MH Lee, ... IEEE Electron Device Letters 45 (4), 673-676, 2024 | | 2024 |
| Unleashing Endurance Limits of Emerging Memory: Multi-Level FeRAM Recovery Array Empowered by a Coordinated Inverting Amplifier Circuit KY Hsiang, FS Chang, ZF Lou, A Aich, A Senapati, JY Lee, ZX Li, ... IEEE Transactions on Electron Devices, 2024 | | 2024 |
| Novel WNx/C Interfacial Layer on Hf0.5Zr0.5O2 Ferroelectric Memory MHL Abhijit Aich, Asim Senapati, Zhao- Feng Lou, Fu- Sheng Chang, Yu- Rui ... 2023 International Conference on Solid State Devices and Materials (SSDM), 2023 | | 2023 |
| A Thin TiNx Layer on Pt Electrode Based Hf0.33Zr0.66O2 Ferroelectric Memory MHL Asim Senapati, Zhao- Feng Lou, Fu- Sheng Chang, Yu- Rui Chen, Yi- Pin ... 2023 International Conference on Solid State Devices and Materials (SSDM), 2023 | | 2023 |
| Impact of Si-Based Interfacial Layer for Ferroelectric Memory S Maikap, A Senapati, ZF Lou, MH Lee 2023 Silicon Nanoelectronics Workshop (SNW), 57-58, 2023 | | 2023 |
| Impact of TiNxOy Layer at the Pt/Hzo Interface for Ferroelectric Memory A Senapati, S Maikap, YL Shen, CY Lin, CY Liao, MH Lee 242nd ECS Meeting (October 9-13, 2022), 2022 | | 2022 |
Siddheswar MaikapProfessor of Electronics Engineering, Chang Gung UniversityVerified email at mail.cgu.edu.tw
