| Estimation of step-by-step induced stress in a sequential process integration of nano-scale SOS MOSFETs with high-k gate dielectrics S Chatterjee, BN Chowdhury, A Das, S Chattopadhyay Semiconductor science and technology 28 (12), 125011, 2013 | 27 | 2013 |
| Investigation of the electrical switching and rectification characteristics of a single standalone n-type ZnO-nanowire/p-Si junction diode A Das, M Palit, S Paul, BN Chowdhury, HS Dutta, A Karmakar, ... Applied Physics Letters 105 (8), 2014 | 22 | 2014 |
| Ultrathin vapor–liquid–solid grown titanium dioxide-II film on bulk GaAs substrates for advanced metal–oxide–semiconductor device applications A Das, BN Chowdhury, R Saha, S Sikdar, S Bhunia, S Chattopadhyay IEEE Transactions on Electron Devices 65 (4), 1466-1472, 2018 | 21 | 2018 |
| Catalyst-modified vapor-liquid-solid (VLS) growth of single crystalline β-Gallium Oxide (Ga2O3) thin film on Si-substrate R Saha, S Sikdar, BN Chowdhury, A Karmakar, S Chattopadhyay Superlattices and Microstructures 136, 106316, 2019 | 15 | 2019 |
| Investigating the impact of source/drain doping dependent effective masses on the transport characteristics of ballistic Si-nanowire field-effect-transistors B Nag Chowdhury, S Chattopadhyay Journal of Applied Physics 115 (12), 2014 | 15 | 2014 |
| Investigation of the performance of strain-engineered silicon nanowire field effect transistors (ɛ-Si-NWFET) on IOS substrates S Chatterjee, S Sikdar, B Nag Chowdhury, S Chattopadhyay Journal of Applied Physics 125 (8), 2019 | 14 | 2019 |
| Formation of High‐Pressure Phase of Titanium Dioxide (TiO2‐II) Thin Films by Vapor‐Liquid‐Solid Growth Process on GaAs Substrate A Das, B Nag Chowdhury, R Saha, S Sikdar, J Sultana, G Kumar Dalapati, ... physica status solidi (a) 216 (2), 1800640, 2019 | 12 | 2019 |
| Investigation of the role of aspect ratio for the design of Si-nanowire field-effect-transistors in ballistic regime BN Chowdhury, S Chattopadhyay Nanoscience and Nanotechnology Letters 5 (10), 1087-1090, 2013 | 11 | 2013 |
| Voltage-Tunable Quantum-Dot Array by Patterned -Nanowire-Based Metal-Oxide-Semiconductor Devices S Sikdar, B Nag Chowdhury, R Saha, S Chattopadhyay Physical Review Applied 15 (5), 054060, 2021 | 9 | 2021 |
| Design and Modeling of High-Efficiency -Nanowire Metal-Oxide-Semiconductor Solar Cells beyond the Shockley-Queisser Limit: An NEGF Approach S Sikdar, B Nag Chowdhury, S Chattopadhyay Physical Review Applied 15 (2), 024055, 2021 | 9 | 2021 |
| Analytical modeling to design the vertically aligned Si-nanowire metal-oxide-semiconductor photosensors for direct color sensing with high spectral resolution S Sikdar, BN Chowdhury, A Ghosh, S Chattopadhyay Physica E: Low-dimensional Systems and Nanostructures 87, 44-50, 2017 | 9 | 2017 |
| Understanding the electrostatics of top-electrode vertical quantized Si nanowire metal–insulator–semiconductor (MIS) structures for future nanoelectronic applications S Sikdar, BN Chowdhury, S Chattopadhyay Journal of Computational Electronics 18, 465-472, 2019 | 8 | 2019 |
| Unusual impact of electron-phonon scattering in Si nanowire field-effect-transistors: A possible route for energy harvesting BN Chowdhury, S Chattopadhyay Superlattices and Microstructures 97, 548-555, 2016 | 7 | 2016 |
| Band splitting induced by momentum-quantization in semiconductor nanostructures: Observation of emission lines in Indium Phosphide (InP) nanotubes M Palit, BN Chowdhury, S Sikdar, K Sarkar, P Banerji, S Chattopadhyay Physics Letters A 388, 127056, 2021 | 6 | 2021 |
| Selective strain incorporation and retention into Si-substrate through VLS growth of TiO2 nano-islands M Palit, BN Chowdhury, A Das, S Das, S Chattopadhyay Materials Research Express 4 (2), 025005, 2017 | 6 | 2017 |
| A diagrammatic approach of impedimetric phase angle-modulus sensing for identification and quantification of various polar and non-polar/ionic adulterants in milk C Das, BN Chowdhury, S Chakraborty, S Sikdar, R Saha, A Mukherjee, ... Lwt 136, 110347, 2021 | 5 | 2021 |
| Dual-Gate GaAs-Nanowire FET for Room Temperature Charge-Qubit Operation: A NEGF Approach B Nag Chowdhury, S Chattopadhyay Advanced Quantum Technologies, 2023 | 2 | 2023 |
| Modeling of transport behavior of the ballistic Silicon nanowire gate-all-around field-effect-transistors (Si NWFETs) with Si/SiO2 interface roughness BN Chowdhury, S Chattopadhyay 2012 5th International Conference on Computers and Devices for Communication …, 2012 | 2 | 2012 |
| Light-activated memristor by Au-nanoparticle embedded HfO-bilayer/p-Si MOS device A Sengupta, BN Chowdhury, B Roy, B Satpati, S Bhunia, ... arXiv preprint arXiv:2306.03044, 2023 | 1 | 2023 |
| Investigating the impact of eugenol on the suppression of gallic acid oxidation by employing cyclic voltammetry A Roy, C Das, B Nag Chowdhury, D Bhattacharya, A Karmakar, ... Available at SSRN 4210405, 2023 | 1 | 2023 |
Sanatan ChattopadhyayUniversity of CalcuttaVerified email at caluniv.ac.in
