Dr. Santosh Kumar Vishvakarma
Title
Cited by
Cited by
Year
Effect of drain doping profile on double-gate tunnel field-effect transistor and its influence on device RF performance
V Vijayvargiya, SK Vishvakarma
IEEE Transactions on Nanotechnology 13 (5), 974-981, 2014
1222014
A single-ended with dynamic feedback control 8T subthreshold SRAM cell
CB Kushwah, SK Vishvakarma
IEEE Transactions on Very Large Scale Integration (VLSI) Systems 24 (1), 373-377, 2015
642015
Automated system for epileptic EEG detection using iterative filtering
RR Sharma, P Varshney, RB Pachori, SK Vishvakarma
IEEE Sensors Letters 2 (4), 1-4, 2018
472018
Precise analytical model for short channel cylindrical gate (CylG) gate-all-around (GAA) MOSFET
D Sharma, SK Vishvakarma
Solid-state electronics 86, 68-74, 2013
412013
On-chip adaptive body bias for reducing the impact of NBTI on 6T SRAM cells
AP Shah, N Yadav, A Beohar, SK Vishvakarma
IEEE Transactions on Semiconductor Manufacturing 31 (2), 242-249, 2018
352018
A robust, ultra low-power, data-dependent-power-supplied 11T SRAM cell with expanded read/write stabilities for internet-of-things applications
V Sharma, M Gopal, P Singh, SK Vishvakarma, SS Chouhan
Analog Integrated Circuits and Signal Processing 98 (2), 331-346, 2019
292019
Analytical modeling of split-gate junction-less transistor for a biosensor application
S Singh, B Raj, SK Vishvakarma
Sensing and bio-sensing research 18, 31-36, 2018
292018
Analyses of DC and analog/RF performances for short channel quadruple-gate gate-all-around MOSFET
D Sharma, SK Vishvakarma
microelectronics journal 46 (8), 731-739, 2015
282015
Stable, reliable, and bit-interleaving 12T SRAM for space applications: A device circuit co-design
N Yadav, AP Shah, SK Vishvakarma
IEEE Transactions on Semiconductor Manufacturing 30 (3), 276-284, 2017
272017
A write‐improved low‐power 12T SRAM cell for wearable wireless sensor nodes
V Sharma, S Vishvakarma, SS Chouhan, K Halonen
International Journal of Circuit Theory and Applications 46 (12), 2314-2333, 2018
242018
Ultra-low power sub-threshold SRAM cell design to improve read static noise margin
C Kushwah, SK Vishvakarma
Progress in VLSI design and test, 139-146, 2012
242012
A sub-threshold eight transistor (8T) SRAM cell design for stability improvement
CB Kushwah, SK Vishvakarma
2014 IEEE International Conference on IC Design & Technology, 1-4, 2014
202014
Ultra-low power high stability 8T SRAM for application in object tracking system
P Singh, SK Vishvakarma
IEEE Access 6, 2279-2290, 2017
192017
Precise analytical model for short-channel quadruple-gate gate-all-around MOSFET
D Sharma, SK Vishvakarma
IEEE transactions on nanotechnology 12 (3), 378-385, 2013
192013
A 220 mV robust read-decoupled partial feedback cutting based low-leakage 9T SRAM for Internet of Things (IoT) applications
V Sharma, M Gopal, P Singh, SK Vishvakarma
AEU-International Journal of Electronics and Communications 87, 144-157, 2018
172018
An improved read-assist energy efficient single ended PPN based 10T SRAM cell for wireless sensor network
P Sanvale, N Gupta, V Neema, AP Shah, SK Vishvakarma
Microelectronics Journal 92, 104611, 2019
162019
Robust task-space motion control of a mobile manipulator using a nonlinear control with an uncertainty estimator
S Mishra, PS Londhe, S Mohan, SK Vishvakarma, BM Patre
Computers & Electrical Engineering 67, 729-740, 2018
162018
Analogue/RF performance attributes of underlap tunnel field effect transistor for low power applications
V Vijayvargiya, BS Reniwal, P Singh, SK Vishvakarma
Electronics Letters 52 (7), 559-560, 2016
162016
Improved short-channel characteristics with long data retention time in extreme short-channel flash memory devices
D Gupta, SK Vishvakarma
IEEE Transactions on Electron Devices 63 (2), 668-674, 2016
162016
Single-ended sub-threshold FinFET 7T SRAM cell without boosted supply
CB Kushwah, SK Vishvakarma, D Dwivedi
2014 IEEE International Conference on IC Design & Technology, 1-4, 2014
162014
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Articles 1–20