Aniruddha Konar
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High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
S Kim, A Konar, WS Hwang, JH Lee, J Lee, J Yang, C Jung, H Kim, ...
Nature communications 3 (1), 1011, 2012
High‐detectivity multilayer MoS2 phototransistors with spectral response from ultraviolet to infrared
W Choi, MY Cho, A Konar, JH Lee, GB Cha, SC Hong, S Kim, J Kim, ...
Advanced materials 24 (43), 5832-5836, 2012
Carrier statistics and quantum capacitance of graphene sheets and ribbons
T Fang, A Konar, H Xing, D Jena
Applied Physics Letters 91 (9), 092109, 2007
Enhancement of carrier mobility in semiconductor nanostructures by dielectric engineering
D Jena, A Konar
Physical review letters 98 (13), 136805, 2007
Effect of high-κ gate dielectrics on charge transport in graphene-based field effect transistors
A Konar, T Fang, D Jena
Physical Review B 82 (11), 115452, 2010
Mobility in semiconducting graphene nanoribbons: Phonon, impurity, and edge roughness scattering
T Fang, A Konar, H Xing, D Jena
Physical Review B 78 (20), 205403, 2008
Transistors with chemically synthesized layered semiconductor WS2 exhibiting 105 room temperature modulation and ambipolar behavior
W Sik Hwang, M Remskar, R Yan, V Protasenko, K Tahy, S Doo Chae, ...
Applied physics letters 101 (1), 013107, 2012
High-field transport in two-dimensional graphene
T Fang, A Konar, H Xing, D Jena
Physical Review B 84 (12), 125450, 2011
Polarization effects on gate leakage in InAlN/AlN/GaN high-electron-mobility transistors
S Ganguly, A Konar, Z Hu, H Xing, D Jena
Applied Physics Letters 101 (25), 253519, 2012
CMOS logic device and circuit performance of Si gate all around nanowire MOSFET
K Nayak, M Bajaj, A Konar, PJ Oldiges, K Natori, H Iwai, KVRM Murali, ...
IEEE Transactions on Electron Devices 61 (9), 3066-3074, 2014
Carrier transport in high mobility InAs nanowire junctionless transistors
A Konar, J Mathew, K Nayak, M Bajaj, RK Pandey, S Dhara, KVRM Murali, ...
Nano letters 15 (3), 1684-1690, 2015
Charge transport in non-polar and semi-polar III-V nitride heterostructures
A Konar, A Verma, T Fang, P Zhao, R Jana, D Jena
Semiconductor Science and Technology 27 (2), 024018, 2012
Tailoring the carrier mobility of semiconductor nanowires by remote dielectrics
A Konar, D Jena
Journal of applied physics 102 (12), 123705, 2007
Selective GeOx-scavenging from interfacial layer on Si1−xGex channel for high mobility Si/Si1−xGex CMOS application
CH Lee, H Kim, P Jamison, RG Southwick, S Mochizuki, K Watanabe, ...
2016 IEEE Symposium on VLSI Technology, 1-2, 2016
Charged basal stacking fault scattering in nitride semiconductors
A Konar, T Fang, N Sun, D Jena
Applied Physics Letters 98 (2), 022109, 2011
Impact of geometrical parameters and substrate on analog/RF performance of stacked nanosheet field effect transistor
V Jegadheesan, K Sivasankaran, A Konar
Materials Science in Semiconductor Processing 93, 188-195, 2019
Negative differential conductivity and carrier heating in gate-all-around Si nanowire FETs and its impact on CMOS logic circuits
K Nayak, M Bajaj, A Konar, PJ Oldiges, H Iwai, K Murali, VR Rao
Japanese Journal of Applied Physics 53 (4S), 04EC16, 2014
Optimized substrate for improved performance of stacked nanosheet field-effect transistor
V Jegadheesan, K Sivasankaran, A Konar
IEEE Transactions on Electron Devices 67 (10), 4079-4084, 2020
Current-carrying capacity of long & short channel 2d graphene transistors
X Luo, Y Lee, A Konar, T Fang, H Xing, G Snider, D Jena
2008 Device Research Conference, 29-30, 2008
Raman and photoluminescence study of dielectric and thermal effects on atomically thin MoS2
R Yan, S Bertolazzi, J Brivio, T Fang, A Konar, AG Birdwell, NV Nguyen, ...
arXiv preprint arXiv:1211.4136, 2012
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