| Undoped AlGaN/GaN HEMTs for microwave power amplification LF Eastman, V Tilak, J Smart, BM Green, EM Chumbes, R Dimitrov, H Kim, ... IEEE Transactions on Electron Devices 48 (3), 479-485, 2001 | 464 | 2001 |
| Effects of SiN passivation and high-electric field on AlGaN-GaN HFET degradation H Kim, RM Thompson, V Tilak, TR Prunty, JR Shealy, LF Eastman IEEE Electron device letters 24 (7), 421-423, 2003 | 258 | 2003 |
| Influence of barrier thickness on the high-power performance of AlGaN/GaN HEMTs V Tilak, B Green, V Kaper, H Kim, T Prunty, J Smart, J Shealy, L Eastman IEEE Electron Device Letters 22 (11), 504-506, 2001 | 194 | 2001 |
| High-power broad-band AlGaN/GaN HEMT MMICs on SiC substrates BM Green, V Tilak, S Lee, H Kim, JA Smart, KJ Webb, JR Shealy, ... IEEE Transactions on Microwave Theory and Techniques 49 (12), 2486-2493, 2001 | 121 | 2001 |
| Reliability evaluation of high power AlGaN/GaN HEMTs on SiC substrate H Kim, V Tilak, BM Green, JA Smart, WJ Schaff, JR Shealy, LF Eastman physica status solidi (a) 188 (1), 203-206, 2001 | 98 | 2001 |
| High-field effects in silicon nitride passivated GaN MODFETs DK Sahoo, RK Lal, H Kim, V Tilak, LF Eastman IEEE Transactions on Electron Devices 50 (5), 1163-1170, 2003 | 76 | 2003 |
| Nanoscale electro-thermal interactions in AlGaN/GaN high electron mobility transistors B Chatterjee, C Dundar, TE Beechem, E Heller, D Kendig, H Kim, ... Journal of Applied Physics 127 (4), 2020 | 75 | 2020 |
| Amorphous InGaZnO thin-film transistors—Part I: Complete extraction of density of states over the full subband-gap energy range Y Kim, M Bae, W Kim, D Kong, HK Jung, H Kim, S Kim, DM Kim, DH Kim IEEE transactions on electron devices 59 (10), 2689-2698, 2012 | 75 | 2012 |
| Simple large-scale synthesis of hydroxyapatite nanoparticles: in situ observation of crystallization process DW Kim, IS Cho, JY Kim, HL Jang, GS Han, HS Ryu, H Shin, HS Jung, ... Langmuir 26 (1), 384-388, 2010 | 69 | 2010 |
| High-Quality ICPCVD for Normally Off AlGaN/GaN-on-Si Recessed MOSHFETs BR Park, JG Lee, W Choi, H Kim, KS Seo, HY Cha IEEE Electron Device Letters 34 (3), 354-356, 2013 | 63 | 2013 |
| High-power monolithic AlGaN/GaN HEMT oscillator VS Kaper, V Tilak, H Kim, AV Vertiatchikh, RM Thompson, TR Prunty, ... IEEE Journal of Solid-State Circuits 38 (9), 1457-1461, 2003 | 58 | 2003 |
| Origin of low photocatalytic activity of rutile TiO2 HS Jung, H Kim Electronic Materials Letters 5, 73-76, 2009 | 55 | 2009 |
| Hot electron induced degradation of undoped AlGaN/GaN HFETs H Kim, A Vertiatchikh, RM Thompson, V Tilak, TR Prunty, JR Shealy, ... Microelectronics Reliability 43 (6), 823-827, 2003 | 47 | 2003 |
| Effect of passivation on AlGaN/GaN HEMT device performance V Tilak, B Green, H Kim, R Dimitrov, J Smart, WJ Schaff, JR Shealy, ... 2000 IEEE international symposium on compound semiconductors. Proceedings of …, 2000 | 46 | 2000 |
| Cascode connected algan/gan hemts on sic substrates BM Green, KK Chu, JA Smart, V Tilak, H Kim, JR Shealy, LF Eastman IEEE Microwave and Guided Wave Letters 10 (8), 316-318, 2000 | 44 | 2000 |
| Degradation characteristics of AlGaN-GaN high electron mobility transistors H Kim, V Tilak, BM Green, H Cha, JA Smart, JR Shealy, LF Eastman 2001 IEEE International Reliability Physics Symposium Proceedings. 39th …, 2001 | 37 | 2001 |
| Reduction of spurious tones and phase noise in dual-loop OEO by loop-gain control JH Cho, H Kim, HK Sung IEEE Photonics Technology Letters 27 (13), 1391-1393, 2015 | 32 | 2015 |
| Influence of oxygen and methane plasma on the electrical properties of undoped AlGaN/GaN heterostructures for high power transistors R Dimitrov, V Tilak, W Yeo, B Green, H Kim, J Smart, E Chumbes, ... Solid-State Electronics 44 (8), 1361-1365, 2000 | 29 | 2000 |
| IoT security issues and light weight block cipher H Shin, HK Lee, HY Cha, SW Heo, H Kim 2019 International Conference on Artificial Intelligence in Information and …, 2019 | 26 | 2019 |
| DC characteristics of wide-bandgap semiconductor field-effect transistors at cryogenic temperatures H Kim, J Lim, H Cha Journal of the Korean Physical Society 56, 2010 | 20 | 2010 |
James R. ShealyCornell UniversityVerified email at ece.cornell.edu
