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Yong-Tae Moon
Yong-Tae Moon
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Year
Optimization of (112¯ 0) a-plane GaN growth by MOCVD on (11¯ 02) r-plane sapphire
X Ni, Y Fu, YT Moon, N Biyikli, H Morkoc
Journal of Crystal Growth 290 (1), 166-170, 2006
1782006
Light output performance of red AlGaInP-based light emitting diodes with different chip geometries and structures
JT Oh, SY Lee, YT Moon, JH Moon, S Park, KY Hong, KY Song, C Oh, ...
Optics express 26 (9), 11194-11200, 2018
1662018
Effects of thermal and hydrogen treatment on indium segregation in InGaN/GaN multiple quantum wells
YT Moon, DJ Kim, KM Song, CJ Choi, SH Han, TY Seong, SJ Park
Journal of Applied Physics 89 (11), 6514-6518, 2001
1132001
Temperature dependence of photoluminescence of InGaN films containing In-rich quantum dots
YT Moon, DJ Kim, JS Park, JT Oh, JM Lee, YW Ok, H Kim, SJ Park
Applied Physics Letters 79 (5), 599-601, 2001
982001
Efficacy of single and double SiNx interlayers on defect reduction in GaN overlayers grown by organometallic vapor-phase epitaxy
F Yun, YT Moon, Y Fu, K Zhu, Ü Ozgür, H Morkoç, CK Inoki, TS Kuan, ...
Journal of applied physics 98 (12), 2005
822005
Study of SiNx and SiO2 passivation of GaN surfaces
SA Chevtchenko, MA Reshchikov, Q Fan, X Ni, YT Moon, AA Baski, ...
Journal of applied physics 101 (11), 2007
782007
GaN resistive hydrogen gas sensors
F Yun, S Chevtchenko, YT Moon, H Morkoç, TJ Fawcett, JT Wolan
Applied Physics Letters 87 (7), 2005
762005
Structural analysis of ferromagnetic Mn-doped ZnO thin films deposited by radio frequency magnetron sputtering
C Liu, F Yun, B Xiao, SJ Cho, YT Moon, H Morkoç, M Abouzaid, ...
Journal of Applied Physics 97 (12), 2005
762005
Enhancement of phase separation in the InGaN layer for self-assembled In-rich quantum dots
IK Park, MK Kwon, SH Baek, YW Ok, TY Seong, SJ Park, YS Kim, ...
Applied Physics Letters 87 (6), 2005
702005
Effectiveness of TiN porous templates on the reduction of threading dislocations in GaN overgrowth by organometallic vapor-phase epitaxy
Y Fu, YT Moon, F Yun, Ü Özgür, JQ Xie, S Doğan, H Morkoç, CK Inoki, ...
Applied Physics Letters 86 (4), 2005
622005
Light extraction enhancement of AlGaN-based vertical type deep-ultraviolet light-emitting-diodes by using highly reflective ITO/Al electrode and surface roughening
YJ Sung, MS Kim, H Kim, S Choi, YH Kim, MH Jung, RJ Choi, YT Moon, ...
Optics express 27 (21), 29930-29937, 2019
572019
Light-extraction efficiency control in AlGaN-based deep-ultraviolet flip-chip light-emitting diodes: a comparison to InGaN-based visible flip-chip light-emitting diodes
KH Lee, HJ Park, SH Kim, M Asadirad, YT Moon, JS Kwak, JH Ryou
Optics express 23 (16), 20340-20349, 2015
552015
Stroke filter for text localization in video images
Q Liu, C Jung, S Kim, Y Moon, J Kim
2006 International Conference on Image Processing, 1473-1476, 2006
532006
Fabrication and current-voltage characterization of a ferroelectric lead zirconate titanate/AlGaN∕ GaN field effect transistor
YS Kang, Q Fan, B Xiao, YI Alivov, J Xie, N Onojima, SJ Cho, YT Moon, ...
Applied physics letters 88 (12), 2006
512006
‘Pop-in’phenomenon during nanoindentation in epitaxial GaN thin films on c-plane sapphire substrates
R Navamathavan, YT Moon, GS Kim, TG Lee, JH Hahn, SJ Park
Materials chemistry and physics 99 (2-3), 410-413, 2006
472006
Effect of n+-GaN subcontact layer on 4H–SiC high-power photoconductive switch
K Zhu, S Doğan, YT Moon, J Leach, F Yun, D Johnstone, H Morkoç, G Li, ...
Applied Physics Letters 86 (26), 2005
472005
Dislocation density reduction in GaN using porous SiN interlayers
A Sagar, RM Feenstra, CK Inoki, TS Kuan, Y Fu, YT Moon, F Yun, ...
physica status solidi (a) 202 (5), 722-726, 2005
462005
Effect of barrier thickness on the interface and optical properties of InGaN/GaN multiple quantum wells
DJ Kim, YT Moon, KM Song, SJ Park
Japanese Journal of Applied Physics 40 (5R), 3085, 2001
462001
Light emission enhancement in blue InGaAlN/InGaN quantum well structures
SH Park, YT Moon, DS Han, J Seo Park, MS Oh, D Ahn
Applied Physics Letters 99 (18), 2011
452011
Method for fabricating white light emitting diode using InGaN phase separation
YT Moon, DJ Kim, KM Song, SJ Park
US Patent 6,303,404, 2001
452001
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