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Subhashis Das
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Studies on a resistive gas sensor based on sol–gel grown nanocrystalline p-TiO2 thin film for fast hydrogen detection
A Hazra, S Das, J Kanungo, CK Sarkar, S Basu
Sensors and Actuators B: Chemical 183, 87-95, 2013
892013
Impact of annealing temperature on band-alignment of PLD grown Ga2O3/Si (100) heterointerface
MK Yadav, A Mondal, S Das, SK Sharma, A Bag
Journal of Alloys and Compounds 819, 153052, 2020
412020
Comparison of different grading schemes in InGaAs metamorphic buffers on GaAs substrate: tilt dependence on cross-hatch irregularities
R Kumar, A Bag, P Mukhopadhyay, S Das, D Biswas
Applied Surface Science 357, 922-930, 2015
332015
Trapping effect analysis of AlGaN/InGaN/GaN Heterostructure by conductance frequency measurement
A Chakraborty, S Ghosh, P Mukhopadhyay, SM Dinara, A Bag, ...
MRS Proc 33 (2), 81-87, 2014
332014
Thermodynamic analysis of acetone sensing in Pd/AlGaN/GaN heterostructure Schottky diodes at low temperatures
S Das, S Majumdar, R Kumar, S Ghosh, D Biswas
Scripta Materialia 113, 39-42, 2016
222016
Off-state leakage and current collapse in AlGaN/GaN HEMTs: a virtual gate induced by dislocations
S Ghosh, S Das, SM Dinara, A Bag, A Chakraborty, P Mukhopadhyay, ...
IEEE Transactions on Electron Devices 65 (4), 1333-1339, 2018
182018
Fast response (7.6 s) acetone sensing by InGaN/GaN on Si (111) at 373 K
S Das, A Bag, R Kumar, D Biswas
IEEE Electron Device Letters 38 (3), 383-386, 2017
162017
Highly sensitive acetone sensor based on Pd/AlGaN/GaN resistive device grown by plasma-assisted molecular beam epitaxy
S Das, S Ghosh, R Kumar, A Bag, D Biswas
IEEE Transactions on Electron Devices 64 (11), 4650-4656, 2017
122017
Influence of temperature, voltage and hydrogen on the reversible transition of electrical conductivity in sol–gel grown nanocrystalline TiO2 thin film
A Hazra, S Das, J Kanungo, E Bontempi, CK Sarkar, P Bhattacharyya, ...
Journal of Materials Science: Materials in Electronics 24 (5), 1658-1663, 2013
122013
Comparison of different pathways in metamorphic graded buffers on GaAs substrate: Indium incorporation with surface roughness
R Kumar, P Mukhopadhyay, A Bag, SK Jana, A Chakraborty, S Das, ...
Applied Surface Science 324, 304-309, 2015
82015
Facile Synthesis of 2D-HfS2 Flakes for μ-IDE based Methanol Sensor: Fast Detection at Room Temperature
S Das, S Sharma, SK Sharma
IEEE Sensors Journal 19 (20), 9090-9096, 2019
72019
Realization and Performance Analysis of Facile-Processed -IDE-Based Multilayer HfS2/HfO2 Transistors
S Sharma, S Das, R Khosla, H Shrimali, SK Sharma
IEEE Transactions on Electron Devices 66 (7), 3236-3241, 2019
72019
High-performance CSA-PANI based organic phototransistor by elastomer gratings
S Sharma, R Khosla, S Das, H Shrimali, SK Sharma
Organic Electronics 57, 14-20, 2018
72018
Probing InGaN immiscibility at AlGaN/InGaN heterointerface on silicon (111) through two-step capacitance-voltage and conductance-voltage profiles
A Bag, S Majumdar, S Das, D Biswas
Materials & Design 133, 176-185, 2017
72017
Investigation of cross-hatch surface and study of anisotropic relaxation and dislocation on InGaAs on GaAs (001)
R Kumar, A Bag, P Mukhopadhyay, S Das, D Biswas
Electronic Materials Letters 12 (3), 356-364, 2016
72016
Reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure
A Chakraborty, S Ghosh, P Mukhopadhyay, SK Jana, SM Dinara, A Bag, ...
Electronic Materials Letters 12 (2), 232-236, 2016
72016
Effect of trapped charge in AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by temperature dependent threshold voltage analysis
A Chakraborty, S Ghosh, P Mukhopadhyay, S Das, A Bag, D Biswas
Superlattices and Microstructures 113, 147-152, 2017
62017
Simplified gas sensor model based on AlGaN/GaN heterostructure Schottky diode
S Das, S Majumdar, R Kumar, A Chakraborty, A Bag, D Biswas
Advanced Materials and Radiation Physics (AMRP-2015) 1675 (020014), 020014-1 …, 2015
62015
Evolution of Lateral V-defects on InGaN/GaN on Si (111) during PAMBE: A Role of Strain on Defect Kinetics
A Bag, S Das, R Kumar, D Biswas
CrystEngComm 20, 4151-4163, 2018
52018
On the different origins of electrical parameter degradation in reverse‐bias stressed AlGaN/GaN HEMTs
S Ghosh, SM Dinara, M Mahata, S Das, P Mukhopadhyay, SK Jana, ...
physica status solidi (a) 213 (6), 1559-1563, 2016
52016
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