Zhiming Shi
Zhiming Shi
China Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Science
Verified email at ciomp.ac.cn
Title
Cited by
Cited by
Year
Predicting two-dimensional silicon carbide monolayers
Z Shi, Z Zhang, A Kutana, BI Yakobson
ACS nano 9 (10), 9802-9809, 2015
982015
How much N-doping can graphene sustain?
Z Shi, A Kutana, BI Yakobson
The journal of physical chemistry letters 6 (1), 106-112, 2015
452015
An Effective Approach to Achieve a Spin Gapless Semiconductor–Half‐Metal–Metal Transition in Zigzag Graphene Nanoribbons: Attaching A Floating Induced Dipole Field via π–π …
J Guan, W Chen, Y Li, G Yu, Z Shi, X Huang, C Sun, Z Chen
Advanced Functional Materials 23 (12), 1507-1518, 2013
322013
The Effects of the Formation of Stone–Wales Defects on the Electronic and Magnetic Properties of Silicon Carbide Nanoribbons: A First‐Principles Investigation
J Guan, G Yu, X Ding, W Chen, Z Shi, X Huang, C Sun
ChemPhysChem 14 (12), 2841-2852, 2013
312013
Environment-Controlled Dislocation Migration and Superplasticity in Monolayer MoS2
X Zou, M Liu, Z Shi, BI Yakobson
Nano Letters 15 (5), 3495-3500, 2015
202015
First principles investigation on the stability, magnetic and electronic properties of the fully and partially hydrogenated BN nanoribbons in different conformers
Z Shi, X Zhao, X Huang
Journal of Materials Chemistry C 1 (41), 6890-6898, 2013
152013
Interlayer coupling in two-dimensional semiconductor materials
Z Shi, X Wang, Y Sun, Y Li, L Zhang
Semiconductor Science and Technology 33 (9), 093001, 2018
112018
Alloying as a Route to Monolayer Transition Metal Dichalcogenides with Improved Optoelectronic Performance: Mo(S1–xSex)2 and Mo1–yWyS2
Z Shi, Q Zhang, U Schwingenschlögl
ACS Applied Energy Materials 1 (5), 2208-2214, 2018
92018
First-principle high-throughput calculations of carrier effective masses of two-dimensional transition metal dichalcogenides
Y Sun, X Wang, XG Zhao, Z Shi, L Zhang
Journal of Semiconductors 39 (7), 072001, 2018
82018
Defect evolution in AlN templates on PVD-AlN/sapphire substrates by thermal annealing
J Ben, X Sun, Y Jia, K Jiang, Z Shi, H Liu, Y Wang, C Kai, Y Wu, D Li
CrystEngComm 20 (32), 4623-4629, 2018
82018
Suppressing the compositional non-uniformity of AlGaN grown on a HVPE-AlN template with large macro-steps
K Jiang, X Sun, J Ben, Z Shi, Y Jia, Y Wu, C Kai, Y Wang, D Li
CrystEngComm 21 (33), 4864-4873, 2019
72019
Monolithic integration of MoS2-based visible detectors and GaN-based UV detectors
Y Wu, Z Li, KW Ang, Y Jia, Z Shi, Z Huang, W Yu, X Sun, X Liu, D Li
Photonics Research 7 (10), 1127-1133, 2019
62019
Modulating the surface state of SiC to control carrier transport in graphene/SiC
Y Jia, X Sun, Z Shi, K Jiang, H Liu, J Ben, D Li
Small 14 (26), 1801273, 2018
62018
Uncovering the Mechanism Behind the Improved Stability of 2D Organic–Inorganic Hybrid Perovskites
Z Shi, Z Cao, X Sun, Y Jia, D Li, L Cavallo, U Schwingenschlögl
Small 15 (16), 1900462, 2019
42019
Tailoring the electronic and magnetic properties of two-dimensional silicon carbide sheets and ribbons by fluorination
Z Shi, A Kutana, G Yu, W Chen, BI Yakobson, U Schwingenschlogl, ...
The Journal of Physical Chemistry C 120 (28), 15407-15414, 2016
42016
杂原子掺杂的含单空位缺陷 BN 纳米管的非线性光学性质
石芝铭, 陈巍, 万素琴, 李辉, 黄旭日
高等学校化学学报 34 (2), 441-446, 2013
42013
Carrier behavior in the vicinity of pit defects in GaN characterized by ultraviolet light-assisted Kelvin probe force microscopy
CH Kai, XJ Sun, YP Jia, ZM Shi, K Jiang, JW Ben, Y Wu, Y Wang, HN Liu, ...
SCIENCE CHINA Physics, Mechanics & Astronomy 62 (6), 67311, 2019
32019
Influence of dislocations on the refractive index of AlN by nanoscale strain field
J Ben, X Sun, Y Jia, K Jiang, Z Shi, Y Wu, C Kai, Y Wang, X Luo, ZC Feng, ...
Nanoscale research letters 14 (1), 184, 2019
22019
Construction of van der Waals substrates for largely mismatched heteroepitaxy systems using first principles
ZM Shi, XJ Sun, YP Jia, XK Liu, SL Zhang, ZB Qi, DB Li
SCIENCE CHINA Physics, Mechanics & Astronomy 62 (12), 127311, 2019
12019
The formation mechanism of voids in physical vapor deposited AlN epilayer during high temperature annealing
J Ben, Z Shi, H Zang, X Sun, X Liu, W Lü, D Li
Applied Physics Letters 116 (25), 251601, 2020
2020
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