| Predicting two-dimensional silicon carbide monolayers Z Shi, Z Zhang, A Kutana, BI Yakobson ACS nano 9 (10), 9802-9809, 2015 | 98 | 2015 |
| How much N-doping can graphene sustain? Z Shi, A Kutana, BI Yakobson The journal of physical chemistry letters 6 (1), 106-112, 2015 | 45 | 2015 |
| An Effective Approach to Achieve a Spin Gapless Semiconductor–Half‐Metal–Metal Transition in Zigzag Graphene Nanoribbons: Attaching A Floating Induced Dipole Field via π–π … J Guan, W Chen, Y Li, G Yu, Z Shi, X Huang, C Sun, Z Chen Advanced Functional Materials 23 (12), 1507-1518, 2013 | 32 | 2013 |
| The Effects of the Formation of Stone–Wales Defects on the Electronic and Magnetic Properties of Silicon Carbide Nanoribbons: A First‐Principles Investigation J Guan, G Yu, X Ding, W Chen, Z Shi, X Huang, C Sun ChemPhysChem 14 (12), 2841-2852, 2013 | 31 | 2013 |
| Environment-Controlled Dislocation Migration and Superplasticity in Monolayer MoS2 X Zou, M Liu, Z Shi, BI Yakobson Nano Letters 15 (5), 3495-3500, 2015 | 20 | 2015 |
| First principles investigation on the stability, magnetic and electronic properties of the fully and partially hydrogenated BN nanoribbons in different conformers Z Shi, X Zhao, X Huang Journal of Materials Chemistry C 1 (41), 6890-6898, 2013 | 15 | 2013 |
| Interlayer coupling in two-dimensional semiconductor materials Z Shi, X Wang, Y Sun, Y Li, L Zhang Semiconductor Science and Technology 33 (9), 093001, 2018 | 11 | 2018 |
| Alloying as a Route to Monolayer Transition Metal Dichalcogenides with Improved Optoelectronic Performance: Mo(S1–xSex)2 and Mo1–yWyS2 Z Shi, Q Zhang, U Schwingenschlögl ACS Applied Energy Materials 1 (5), 2208-2214, 2018 | 9 | 2018 |
| First-principle high-throughput calculations of carrier effective masses of two-dimensional transition metal dichalcogenides Y Sun, X Wang, XG Zhao, Z Shi, L Zhang Journal of Semiconductors 39 (7), 072001, 2018 | 8 | 2018 |
| Defect evolution in AlN templates on PVD-AlN/sapphire substrates by thermal annealing J Ben, X Sun, Y Jia, K Jiang, Z Shi, H Liu, Y Wang, C Kai, Y Wu, D Li CrystEngComm 20 (32), 4623-4629, 2018 | 8 | 2018 |
| Suppressing the compositional non-uniformity of AlGaN grown on a HVPE-AlN template with large macro-steps K Jiang, X Sun, J Ben, Z Shi, Y Jia, Y Wu, C Kai, Y Wang, D Li CrystEngComm 21 (33), 4864-4873, 2019 | 7 | 2019 |
| Monolithic integration of MoS2-based visible detectors and GaN-based UV detectors Y Wu, Z Li, KW Ang, Y Jia, Z Shi, Z Huang, W Yu, X Sun, X Liu, D Li Photonics Research 7 (10), 1127-1133, 2019 | 6 | 2019 |
| Modulating the surface state of SiC to control carrier transport in graphene/SiC Y Jia, X Sun, Z Shi, K Jiang, H Liu, J Ben, D Li Small 14 (26), 1801273, 2018 | 6 | 2018 |
| Uncovering the Mechanism Behind the Improved Stability of 2D Organic–Inorganic Hybrid Perovskites Z Shi, Z Cao, X Sun, Y Jia, D Li, L Cavallo, U Schwingenschlögl Small 15 (16), 1900462, 2019 | 4 | 2019 |
| Tailoring the electronic and magnetic properties of two-dimensional silicon carbide sheets and ribbons by fluorination Z Shi, A Kutana, G Yu, W Chen, BI Yakobson, U Schwingenschlogl, ... The Journal of Physical Chemistry C 120 (28), 15407-15414, 2016 | 4 | 2016 |
| 杂原子掺杂的含单空位缺陷 BN 纳米管的非线性光学性质 石芝铭， 陈巍， 万素琴， 李辉， 黄旭日 高等学校化学学报 34 (2), 441-446, 2013 | 4 | 2013 |
| Carrier behavior in the vicinity of pit defects in GaN characterized by ultraviolet light-assisted Kelvin probe force microscopy CH Kai, XJ Sun, YP Jia, ZM Shi, K Jiang, JW Ben, Y Wu, Y Wang, HN Liu, ... SCIENCE CHINA Physics, Mechanics & Astronomy 62 (6), 67311, 2019 | 3 | 2019 |
| Influence of dislocations on the refractive index of AlN by nanoscale strain field J Ben, X Sun, Y Jia, K Jiang, Z Shi, Y Wu, C Kai, Y Wang, X Luo, ZC Feng, ... Nanoscale research letters 14 (1), 184, 2019 | 2 | 2019 |
| Construction of van der Waals substrates for largely mismatched heteroepitaxy systems using first principles ZM Shi, XJ Sun, YP Jia, XK Liu, SL Zhang, ZB Qi, DB Li SCIENCE CHINA Physics, Mechanics & Astronomy 62 (12), 127311, 2019 | 1 | 2019 |
| The formation mechanism of voids in physical vapor deposited AlN epilayer during high temperature annealing J Ben, Z Shi, H Zang, X Sun, X Liu, W Lü, D Li Applied Physics Letters 116 (25), 251601, 2020 | | 2020 |
Boris YakobsonProfessor of Materials Science & NanoEngineering, and of Chemistry, Rice UniversityVerified email at rice.edu
