Zhiming Shi
Zhiming Shi
China Changchun Institute of Optics Fine Mechanics and Physics Chinese Academy of Science
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Predicting two-dimensional silicon carbide monolayers
Z Shi, Z Zhang, A Kutana, BI Yakobson
ACS nano 9 (10), 9802-9809, 2015
How much N-doping can graphene sustain?
Z Shi, A Kutana, BI Yakobson
The Journal of Physical Chemistry Letters 6 (1), 106-112, 2015
The Effects of the Formation of Stone–Wales Defects on the Electronic and Magnetic Properties of Silicon Carbide Nanoribbons: A First‐Principles Investigation
J Guan, G Yu, X Ding, W Chen, Z Shi, X Huang, C Sun
ChemPhysChem 14 (12), 2841-2852, 2013
An Effective Approach to Achieve a Spin Gapless Semiconductor–Half‐Metal–Metal Transition in Zigzag Graphene Nanoribbons: Attaching A Floating Induced Dipole Field via π–π …
J Guan, W Chen, Y Li, G Yu, Z Shi, X Huang, C Sun, Z Chen
Advanced Functional Materials 23 (12), 1507-1518, 2013
Interlayer coupling in two-dimensional semiconductor materials
Z Shi, X Wang, Y Sun, Y Li, L Zhang
Semiconductor Science and Technology 33 (9), 093001, 2018
Monolithic integration of MoS2-based visible detectors and GaN-based UV detectors
Y Wu, Z Li, KW Ang, Y Jia, Z Shi, Z Huang, W Yu, X Sun, X Liu, D Li
Photonics Research 7 (10), 1127-1133, 2019
Environment-Controlled Dislocation Migration and Superplasticity in Monolayer MoS2
X Zou, M Liu, Z Shi, BI Yakobson
Nano Letters 15 (5), 3495-3500, 2015
Defect evolution in AlN templates on PVD-AlN/sapphire substrates by thermal annealing
J Ben, X Sun, Y Jia, K Jiang, Z Shi, H Liu, Y Wang, C Kai, Y Wu, D Li
CrystEngComm 20 (32), 4623-4629, 2018
First principles investigation on the stability, magnetic and electronic properties of the fully and partially hydrogenated BN nanoribbons in different conformers
Z Shi, X Zhao, X Huang
Journal of Materials Chemistry C 1 (41), 6890-6898, 2013
2D III‐Nitride Materials: Properties, Growth, and Applications
J Ben, X Liu, C Wang, Y Zhang, Z Shi, Y Jia, S Zhang, H Zhang, W Yu, ...
Advanced Materials 33 (27), 2006761, 2021
Polarization-enhanced AlGaN solar-blind ultraviolet detectors
K Jiang, X Sun, ZH Zhang, J Ben, J Che, Z Shi, Y Jia, Y Chen, S Zhang, ...
Photonics Research 8 (7), 1243-1252, 2020
PdCoNi alloy nanoparticles decorated, nitrogen-doped carbon nanotubes for highly active and durable oxygen reduction electrocatalysis
Z Li, J Li, K Jiang, S Yuan, D Yu, H Wei, Z Shi, X Li, H Chu
Chemical Engineering Journal 411, 128527, 2021
Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides
K Jiang, X Sun, Z Shi, H Zang, J Ben, HX Deng, D Li
Light: Science & Applications 10 (1), 1-10, 2021
Uncovering the Mechanism Behind the Improved Stability of 2D Organic–Inorganic Hybrid Perovskites
Z Shi, Z Cao, X Sun, Y Jia, D Li, L Cavallo, U Schwingenschlögl
Small 15 (16), 1900462, 2019
The formation mechanism of voids in physical vapor deposited AlN epilayer during high temperature annealing
J Ben, Z Shi, H Zang, X Sun, X Liu, W Lü, D Li
Applied Physics Letters 116 (25), 251601, 2020
First-principle high-throughput calculations of carrier effective masses of two-dimensional transition metal dichalcogenides
Y Sun, X Wang, XG Zhao, Z Shi, L Zhang
Journal of Semiconductors 39 (7), 072001, 2018
Alloying as a Route to Monolayer Transition Metal Dichalcogenides with Improved Optoelectronic Performance: Mo(S1–xSex)2 and Mo1–yWyS2
Z Shi, Q Zhang, U Schwingenschlogl
ACS Applied Energy Materials 1 (5), 2208-2214, 2018
Elimination of the internal electrostatic field in two-dimensional GaN-based semiconductors
Y Jia, Z Shi, W Hou, H Zang, K Jiang, Y Chen, S Zhang, Z Qi, T Wu, X Sun, ...
npj 2D Materials and Applications 4 (1), 1-7, 2020
Improved nucleation of AlN on in situ nitrogen doped graphene for GaN quasi-van der Waals epitaxy
Y Chen, H Zang, K Jiang, J Ben, S Zhang, Z Shi, Y Jia, W Lü, X Sun, D Li
Applied Physics Letters 117 (5), 051601, 2020
Band structure engineering through van der Waals heterostructing superlattices of two‐dimensional transition metal dichalcogenides
XG Zhao, Z Shi, X Wang, H Zou, Y Fu, L Zhang
InfoMat 3 (2), 201-211, 2021
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