| Nano-electronic Simulation Software (NESS): a flexible nano-device simulation platform S Berrada, H Carrillo-Nunez, J Lee, C Medina-Bailon, T Dutta, O Badami, ... Journal of Computational Electronics 19, 1031-1046, 2020 | 30 | 2020 |
| Electro-thermal performance boosting in stacked Si gate-all-around nanosheet FET with engineered source/drain contacts S Venkateswarlu, O Badami, K Nayak IEEE Transactions on Electron Devices 68 (9), 4723-4728, 2021 | 26 | 2021 |
| An improved surface roughness scattering model for bulk, thin-body, and quantum-well MOSFETs O Badami, E Caruso, D Lizzit, P Osgnach, D Esseni, P Palestri, L Selmi IEEE Transactions on Electron Devices 63 (6), 2306-2312, 2016 | 23 | 2016 |
| Simulation of the impact of ionized impurity scattering on the total mobility in Si nanowire transistors T Sadi, C Medina-Bailon, M Nedjalkov, J Lee, O Badami, S Berrada, ... Materials 12 (1), 124, 2019 | 22 | 2019 |
| Comprehensive study of cross-section dependent effective masses for silicon based gate-all-around transistors O Badami, C Medina-Bailon, S Berrada, H Carrillo-Nunez, J Lee, ... Applied Sciences 9 (9), 1895, 2019 | 20 | 2019 |
| Performance comparison for FinFETs, nanowire and stacked nanowires FETs: Focus on the influence of surface roughness and thermal effects O Badami, F Driussi, P Palestri, L Selmi, D Esseni 2017 IEEE International Electron Devices Meeting (IEDM), 13.2. 1-13.2. 4, 2017 | 18 | 2017 |
| Mobility of circular and elliptical Si nanowire transistors using a multi-subband 1D formalism C Medina-Bailon, T Sadi, M Nedjalkov, H Carrillo-Nuñez, J Lee, ... IEEE Electron Device Letters 40 (10), 1571-1574, 2019 | 15 | 2019 |
| Improved surface-roughness scattering and mobility models for multi-gate FETs with arbitrary cross-section and biasing scheme D Lizzit, O Badami, R Specogna, D Esseni Journal of Applied Physics 121 (24), 2017 | 11 | 2017 |
| Benchmarking of 3-D MOSFET architectures: Focus on the impact of surface roughness and self-heating O Badami, D Lizzit, F Driussi, P Palestri, D Esseni IEEE Transactions on Electron Devices 65 (9), 3646-3653, 2018 | 10 | 2018 |
| Design optimization of gate-allaround vertical nanowire transistors for future memory applications TK Agarwal, O Badami, S Ganguly, S Mahapatra, D Saha IEEE International Conference of Electron Devices and Solid-State Circuits …, 2013 | 10 | 2013 |
| Schrödinger equation based quantum corrections in drift-diffusion: A multiscale approach T Dutta, C Medina-Bailon, H Carrillo-Nunez, O Badami, V Georgiev, ... 2019 IEEE 14th Nanotechnology Materials and Devices Conference (NMDC), 1-4, 2019 | 9 | 2019 |
| Variability Predictions for the Next Technology Generations of n-type SixGe1−x Nanowire MOSFETs J Lee, O Badami, H Carrillo-Nuñez, S Berrada, C Medina-Bailon, T Dutta, ... Micromachines 9 (12), 643, 2018 | 8 | 2018 |
| Tunneling-triggered bipolar action in junctionless tunnel field-effect transistor S Gundapaneni, A Goswami, O Badami, R Cuduvally, A Konar, M Bajaj, ... Applied Physics Express 7 (12), 124302, 2014 | 8 | 2014 |
| Surface Roughness Scattering in NEGF using self-energy formulation O Badami, S Berrada, H Carrillo-Nunez, C Medina-Bailon, V Georgiev, ... 2019 International Conference on Simulation of Semiconductor Processes and …, 2019 | 7 | 2019 |
| A Kinetic Monte Carlo study of retention time in a POM molecule-based flash memory O Badami, T Sadi, F Adamu-Lema, P Lapham, D Mu, V Georgiev, J Ding, ... IEEE Transactions on Nanotechnology 19, 704-710, 2020 | 6 | 2020 |
| Enhanced Capabilities of the Nano-Electronic Simulation Software (NESS) C Medina-Bailon, O Badami, H Carrillo-Nunez, T Dutta, D Nagy, ... 2020 International Conference on Simulation of Semiconductor Processes and …, 2020 | 5 | 2020 |
| NEGF based transport modelling with a full-band, pseudopotential Hamiltonian: Theory, implementation and full device simulations MG Pala, O Badami, D Esseni 2017 IEEE International Electron Devices Meeting (IEDM), 35.1. 1-35.1. 4, 2017 | 5 | 2017 |
| Simulation of gated GaAs-AlGaAs resonant tunneling diodes for tunable terahertz communication applications VP Georgiev, A Sengupta, P Maciazek, O Badami, C Medina-Bailon, ... 2020 International Conference on Simulation of Semiconductor Processes and …, 2020 | 4 | 2020 |
| Transport models based on NEGF and empirical pseudopotentials: a computationally viable method for self-consistent simulation of nanoscale devices MG Pala, O Badami, D Esseni 2018 IEEE International Electron Devices Meeting (IEDM), 33.1. 1-33.1. 4, 2018 | 4 | 2018 |
| Surface roughness limited mobility in multi-gate FETs with arbitrary cross-section O Badami, D Lizzit, R Specogna, D Esseni 2016 IEEE International Electron Devices Meeting (IEDM), 36.1. 1-36.1. 4, 2016 | 4 | 2016 |
a asenovThe University of GlasgowVerified email at glasgow.ac.uk
