Lakshmi B
Lakshmi B
Professor, Centre for Nano-Electronics & VLSI Design and School of Electronics, VIT Chennai
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Cited by
Cited by
A family of conservative chaotic systems with cyclic symmetry
G Gugapriya, K Rajagopal, A Karthikeyan, B Lakshmi
Pramana 92 (4), 1-6, 2019
RF performance enhancement in multi-fin TFETs by scaling inter fin separation
N Thoti, B Lakshmi
Materials Science in Semiconductor Processing 71, 304-309, 2017
VLSI architecture for broadband MVDR beamformer
N Hema, JU Kidav, B Lakshmi
Indian Journal of Science and Technology 8 (19), 1-10, 2015
Performance analysis of dual metal gate work function in junctionless transistors
B Lakshmi, R Srinivasan
Journal of Computational and Theoretical Nanoscience 10 (6), 1354-1358, 2013
Numerical modeling of process parameters on RF metrics in FinFETs, junctionless, and gate‐all‐around devices
B Lakshmi, R Srinivasan
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2017
Investigation of radiation hardened TFET SRAM cell for mitigation of single event upset
M Pown, B Lakshmi
IEEE Journal of the Electron Devices Society 8, 1397-1403, 2020
Effect of process parameter variation on ft in coventional and junctionless gate-all-around devices
B Lakshmi, R Srinivasan
Journal of Engineering Science and Technology 10 (8), 994-1008, 2015
Performance analysis of InAs-and GaSb-InAs-based independent gate tunnel field effect transistor RF mixers
M Pown, B Lakshmi
Journal of Computational Electronics 16 (3), 676-684, 2017
Investigation of ft and Non-Quasi-Static Delay in Conventional and Junctionless multigate transistors using TCAD Simulations
B Lakshmi, R Srinivasan
ARPN Journal of Engineering and Applied Sciences 7 (7), 847-852, 2012
3D-TCAD simulation study of process variations on ft in 30 nm gate length FinFET
B Lakshmi, R Srinivasan
2011 International Conference on Emerging Trends in Electrical and Computer …, 2011
Fractional-order chaotic system with hyperbolic function
G Gugapriya, P Duraisamy, A Karthikeyan, B Lakshmi
Advances in Mechanical Engineering 11 (8), 1687814019872581, 2019
Investigation of ft and fmax in Si and Si1–xGex based single and dual material double-gate Tunnel FETs for RF applications
M Pown, B Lakshmi
Advances in Natural Sciences: Nanoscience and Nanotechnology 7 (2), 025006, 2016
Effect of gate electrode work function in conventional and junctionless FinFETs
B Lakshmi, R Srinivasan
International Journal of Physical Sciences 7 (49), 6246-6254, 2012
Investigation of Homo and hetero-junction double-gate tunnel-FET-based adiabatic inverter circuits
M Pown, S Sandeep, B Lakshmi
IETE Journal of Research, 1-9, 2020
Investigation and statistical modeling of InAs-based double gate tunnel FETs for RF performance enhancement
S Poorvasha, B Lakshmi
Journal of Semiconductors 39 (5), 054001, 2018
Aging degradation impact on the stability of 6T-SRAM bit-cell
S Koushik, B Lakshmi
Indian Journal of Science and Technology 8 (20), 1-7, 2015
Effect of process parameter variation on ft in n-type junctionless FETs
B Lakshmi, R Srinivasan
Journal of Computational Electronics 12 (3), 454-459, 2013
Influence of structural and doping parameter variations on Si and Si 1 - x Ge …
S Poorvasha, B Lakshmi
Pramana 91 (1), 1-8, 2018
Performance of asymmetric gate oxide on gate-drain overlap in Si and Si1−xGexdouble gate tunnel FETs
S Poorvasha, B Lakshmi
2016 International Conference on VLSI Systems, Architectures, Technology and …, 2016
Effect of Structural and Doping Parameter Variations on NQS Delay, Intrinsic Gain and NF in Junctionless FETs
RS B. Lakshmi
ARPN Journal of Engineering and Applied Sciences 10 (4), 1642-1649, 2015
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