| A family of conservative chaotic systems with cyclic symmetry G Gugapriya, K Rajagopal, A Karthikeyan, B Lakshmi Pramana 92 (4), 1-6, 2019 | 12 | 2019 |
| RF performance enhancement in multi-fin TFETs by scaling inter fin separation N Thoti, B Lakshmi Materials Science in Semiconductor Processing 71, 304-309, 2017 | 12 | 2017 |
| VLSI architecture for broadband MVDR beamformer N Hema, JU Kidav, B Lakshmi Indian Journal of Science and Technology 8 (19), 1-10, 2015 | 11 | 2015 |
| Performance analysis of dual metal gate work function in junctionless transistors B Lakshmi, R Srinivasan Journal of Computational and Theoretical Nanoscience 10 (6), 1354-1358, 2013 | 8 | 2013 |
| Numerical modeling of process parameters on RF metrics in FinFETs, junctionless, and gate‐all‐around devices B Lakshmi, R Srinivasan International Journal of Numerical Modelling: Electronic Networks, Devices …, 2017 | 7 | 2017 |
| Investigation of radiation hardened TFET SRAM cell for mitigation of single event upset M Pown, B Lakshmi IEEE Journal of the Electron Devices Society 8, 1397-1403, 2020 | 6 | 2020 |
| Effect of process parameter variation on ft in coventional and junctionless gate-all-around devices B Lakshmi, R Srinivasan Journal of Engineering Science and Technology 10 (8), 994-1008, 2015 | 6 | 2015 |
| Performance analysis of InAs-and GaSb-InAs-based independent gate tunnel field effect transistor RF mixers M Pown, B Lakshmi Journal of Computational Electronics 16 (3), 676-684, 2017 | 5 | 2017 |
| Investigation of ft and Non-Quasi-Static Delay in Conventional and Junctionless multigate transistors using TCAD Simulations B Lakshmi, R Srinivasan ARPN Journal of Engineering and Applied Sciences 7 (7), 847-852, 2012 | 5 | 2012 |
| 3D-TCAD simulation study of process variations on ft in 30 nm gate length FinFET B Lakshmi, R Srinivasan 2011 International Conference on Emerging Trends in Electrical and Computer …, 2011 | 5 | 2011 |
| Fractional-order chaotic system with hyperbolic function G Gugapriya, P Duraisamy, A Karthikeyan, B Lakshmi Advances in Mechanical Engineering 11 (8), 1687814019872581, 2019 | 4 | 2019 |
| Investigation of ft and fmax in Si and Si1–xGex based single and dual material double-gate Tunnel FETs for RF applications M Pown, B Lakshmi Advances in Natural Sciences: Nanoscience and Nanotechnology 7 (2), 025006, 2016 | 4 | 2016 |
| Effect of gate electrode work function in conventional and junctionless FinFETs B Lakshmi, R Srinivasan International Journal of Physical Sciences 7 (49), 6246-6254, 2012 | 4 | 2012 |
| Investigation of Homo and hetero-junction double-gate tunnel-FET-based adiabatic inverter circuits M Pown, S Sandeep, B Lakshmi IETE Journal of Research, 1-9, 2020 | 3 | 2020 |
| Investigation and statistical modeling of InAs-based double gate tunnel FETs for RF performance enhancement S Poorvasha, B Lakshmi Journal of Semiconductors 39 (5), 054001, 2018 | 3 | 2018 |
| Aging degradation impact on the stability of 6T-SRAM bit-cell S Koushik, B Lakshmi Indian Journal of Science and Technology 8 (20), 1-7, 2015 | 3 | 2015 |
| Effect of process parameter variation on ft in n-type junctionless FETs B Lakshmi, R Srinivasan Journal of Computational Electronics 12 (3), 454-459, 2013 | 3 | 2013 |
| Influence of structural and doping parameter variations on Si and Si 1 - x Ge … S Poorvasha, B Lakshmi Pramana 91 (1), 1-8, 2018 | 2 | 2018 |
| Performance of asymmetric gate oxide on gate-drain overlap in Si and Si1−xGexdouble gate tunnel FETs S Poorvasha, B Lakshmi 2016 International Conference on VLSI Systems, Architectures, Technology and …, 2016 | 2 | 2016 |
| Effect of Structural and Doping Parameter Variations on NQS Delay, Intrinsic Gain and NF in Junctionless FETs RS B. Lakshmi ARPN Journal of Engineering and Applied Sciences 10 (4), 1642-1649, 2015 | 2 | 2015 |
