Lakshmi B
Lakshmi B
Professor, Centre for Nano-Electronics & VLSI Design and School of Electronics, VIT Chennai
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Cited by
A family of conservative chaotic systems with cyclic symmetry
G Gugapriya, K Rajagopal, A Karthikeyan, B Lakshmi
Pramana 92, 1-6, 2019
RF performance enhancement in multi-fin TFETs by scaling inter fin separation
N Thoti, B Lakshmi
Materials Science in Semiconductor Processing 71, 304-309, 2017
Investigation of radiation hardened TFET SRAM cell for mitigation of single event upset
M Pown, B Lakshmi
IEEE Journal of the Electron Devices Society 8, 1397-1403, 2020
VLSI architecture for broadband MVDR beamformer
N Hema, JU Kidav, B Lakshmi
Indian Journal of Science and Technology 8 (19), 1-10, 2015
Fractional-order chaotic system with hyperbolic function
G Gugapriya, P Duraisamy, A Karthikeyan, B Lakshmi
Advances in Mechanical Engineering 11 (8), 1687814019872581, 2019
Performance analysis of InAs-and GaSb-InAs-based independent gate tunnel field effect transistor RF mixers
M Pown, B Lakshmi
Journal of Computational Electronics 16, 676-684, 2017
Numerical modeling of process parameters on RF metrics in FinFETs, junctionless, and gate‐all‐around devices
B Lakshmi, R Srinivasan
International Journal of Numerical Modelling: Electronic Networks, Devices …, 2017
Performance analysis of dual metal gate work function in junctionless transistors
B Lakshmi, R Srinivasan
Journal of Computational and Theoretical Nanoscience 10 (6), 1354-1358, 2013
Effect of process parameter variation on ft in coventional and junctionless gate-all-around devices
B Lakshmi, R Srinivasan
Journal of Engineering Science and Technology 10 (8), 994-1008, 2015
3D-TCAD simulation study of process variations on ft in 30 nm gate length FinFET
B Lakshmi, R Srinivasan
2011 International Conference on Emerging Trends in Electrical and Computer …, 2011
Investigation of Homo and hetero-junction double-gate tunnel-FET-based adiabatic inverter circuits
M Pown, S Sandeep, B Lakshmi
IETE journal of research 69 (2), 1124-1132, 2023
Effect of gate electrode work function in conventional and junctionless FinFETs
B Lakshmi, R Srinivasan
Int. J. Phys. Sci 7 (49), 6246-6254, 2012
Investigation of ft and non-quasi-static delay in conventional and junctionless multigate transistors using TCAD simulations
B Lakshmi, R Srinivasan
ARPN Journal of Engineering and Applied Sciences 7 (7), 847-852, 2012
Tunable work function in Junctionless Tunnel FETs for performance enhancement
RN Goswami, S Poorvasha, B Lakshmi
Australian journal of electrical and electronics engineering 15 (3), 80-85, 2018
Investigation of ft and fmax in Si and Si1–xGex based single and dual material double-gate Tunnel FETs for RF applications
M Pown, B Lakshmi
Advances in Natural Sciences: Nanoscience and Nanotechnology 7 (2), 025006, 2016
Aging degradation impact on the stability of 6T-SRAM bit-cell
SK Koushik, B Lakshmi
Indian Journal of Science and Technology 8 (20), 1-7, 2015
Influence of structural and doping parameter variations on Si and double gate tunnel FETs: An analysis for RF performance enhancement
S Poorvasha, B Lakshmi
Pramana 91, 1-8, 2018
Investigation and statistical modeling of InAs-based double gate tunnel FETs for RF performance enhancement
S Poorvasha, B Lakshmi
Journal of Semiconductors 39 (5), 054001, 2018
Effect of process parameter variation on f t in n-type junctionless FETs
B Lakshmi, R Srinivasan
Journal of Computational Electronics 12, 454-459, 2013
Radiation study of TFET and JLFET-based devices and circuits: a comprehensive review on the device structure and sensitivity
K Aishwarya, B Lakshmi
Radiation Effects and Defects in Solids 178 (3-4), 229-257, 2023
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