Antibacterial and antioxidant activity of saponin from Abutilon indicum leaves R Lokesh, V Manasvi, BP Lakshmi Asian J. Pharm. Clin. Res 9 (3), 344-347, 2016 | 68 | 2016 |
A family of conservative chaotic systems with cyclic symmetry G Gugapriya, K Rajagopal, A Karthikeyan, B Lakshmi Pramana 92, 1-6, 2019 | 30 | 2019 |
Investigation of radiation hardened TFET SRAM cell for mitigation of single event upset M Pown, B Lakshmi IEEE Journal of the Electron Devices Society 8, 1397-1403, 2020 | 21 | 2020 |
RF performance enhancement in multi-fin TFETs by scaling inter fin separation N Thoti, B Lakshmi Materials Science in Semiconductor Processing 71, 304-309, 2017 | 19 | 2017 |
VLSI architecture for broadband MVDR beamformer N Hema, JU Kidav, B Lakshmi Indian Journal of Science and Technology 8 (19), 1-10, 2015 | 13 | 2015 |
Fractional-order chaotic system with hyperbolic function G Gugapriya, P Duraisamy, A Karthikeyan, B Lakshmi Advances in Mechanical Engineering 11 (8), 1687814019872581, 2019 | 12 | 2019 |
Tunable work function in Junctionless Tunnel FETs for performance enhancement RN Goswami, S Poorvasha, B Lakshmi Australian journal of electrical and electronics engineering 15 (3), 80-85, 2018 | 10 | 2018 |
Performance analysis of dual metal gate work function in junctionless transistors B Lakshmi, R Srinivasan Journal of Computational and Theoretical Nanoscience 10 (6), 1354-1358, 2013 | 8 | 2013 |
Performance analysis of InAs-and GaSb-InAs-based independent gate tunnel field effect transistor RF mixers M Pown, B Lakshmi Journal of Computational Electronics 16, 676-684, 2017 | 7 | 2017 |
Numerical modeling of process parameters on RF metrics in FinFETs, junctionless, and gate‐all‐around devices B Lakshmi, R Srinivasan International Journal of Numerical Modelling: Electronic Networks, Devices …, 2017 | 7 | 2017 |
Investigation of ft and fmax in Si and Si1–xGex based single and dual material double-gate Tunnel FETs for RF applications M Pown, B Lakshmi Advances in Natural Sciences: Nanoscience and Nanotechnology 7 (2), 025006, 2016 | 7 | 2016 |
Effect of process parameter variation on ft in coventional and junctionless gate-all-around devices B Lakshmi, R Srinivasan Journal of Engineering Science and Technology 10 (8), 994-1008, 2015 | 6 | 2015 |
3D-TCAD simulation study of process variations on ft in 30 nm gate length FinFET B Lakshmi, R Srinivasan 2011 International Conference on Emerging Trends in Electrical and Computer …, 2011 | 6 | 2011 |
Investigation of Homo and hetero-junction double-gate tunnel-FET-based adiabatic inverter circuits M Pown, S Sandeep, B Lakshmi IETE journal of research 69 (2), 1124-1132, 2023 | 5 | 2023 |
Effect of gate electrode work function in conventional and junctionless FinFETs B Lakshmi, R Srinivasan Int. J. Phys. Sci 7 (49), 6246-6254, 2012 | 5 | 2012 |
Investigation of ft and non-quasi-static delay in conventional and junctionless multigate transistors using TCAD simulations B Lakshmi, R Srinivasan ARPN Journal of Engineering and Applied Sciences 7 (7), 847-852, 2012 | 5 | 2012 |
Radiation study of TFET and JLFET-based devices and circuits: a comprehensive review on the device structure and sensitivity K Aishwarya, B Lakshmi Radiation Effects and Defects in Solids 178 (3-4), 229-257, 2023 | 4 | 2023 |
Tunnel field effect transistors for digital and analog applications: a review S Poorvasha, M Pown, B Lakshmi Indian Journal of Science and Technology 10 (13), 2017 | 4 | 2017 |
Aging degradation impact on the stability of 6T-SRAM bit-cell SK Koushik, B Lakshmi Indian Journal of Science and Technology 8 (20), 1-7, 2015 | 4 | 2015 |
Design of universal logic gates using homo and hetero-junction double gate TFETs with pseudo-derived logic L Boggarapu, SPK K, B Lakshmi International Journal of Electronics 110 (3), 442-462, 2023 | 3 | 2023 |