‪Sindhu Ramaswamy‬ - ‪Google Scholar‬

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Citations	702	462
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i10-index	4	4

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Co-authors

Mamidala Jagadesh Kumar.Indian Institute of Technology Delhi; Chairman, UGCVerified email at ee.iitd.ac.in

Sindhu Ramaswamy

Sindhu Ramaswamy

GlobalFoundries, IIT Delhi

Verified email at globalfoundries.com

Compact modeling of semiconductor devices Micro/Nanoelectronics Nanoscale semiconductor devices


Title Sort by citations Sort by year Sort by title	Cited by Cited by	Year
Doping-less tunnel field effect transistor: Design and investigation MJ Kumar, S Janardhanan IEEE transactions on Electron Devices 60 (10), 3285-3290, 2013	596	2013
Junctionless impact ionization MOS: Proposal and investigation S Ramaswamy, MJ Kumar IEEE Transactions on Electron Devices 61 (12), 4295-4298, 2014	60	2014
Double Gate Symmetric Tunnel FET: Investigation and Analysis S Ramaswamy, MJ Kumar IET Circuits, Devices and Systems, 2016	26	2016
Raised source/drain Dopingless Junctionless Accumulation Mode FET: Design and Analysis S Ramaswamy, MJ Kumar IEEE Transactions on Electron Devices, 2016	20	2016

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