| Performance analysis of silicon nanowire transistors considering effective oxide thickness of high-k gate dielectric S Theodore Chandra, NB Balamurugan Journal of Semiconductors 35 (4), 044001, 2014 | 14 | 2014 |
| Two dimensional analytical modeling of a nanoscale dual material gate MOSFETs PS Dhanaselvam, NB Balamurugan, P Vanitha, ST Chandra International Journal of Advanced Science and Technology 18, 49-58, 2010 | 7 | 2010 |
| Analysis of Charge Density and Fermi Level of AlInSb/InSb Single Gate High Electron Mobility Transistor S Theodore Chandra, NB Balamurugan, M Bhuvaneswari, N Anbuselvan, ... Journal of Semiconductors 36 (6), 7, 2015 | 3* | 2015 |
| Analysis of Subthreshold Behavior of AlInSb/InSb High Electron Mobility Transistors (HEMTs) S Theodore Chandra, NB Balamurugan, G Lakshmi Priya, S Manikandan Chinese Physics B, 2015 | 3 | 2015 |
| Compact analytical model for single gate AlInSb/InSb high electron mobility transistors S Theodore Chandra, NB Balamurugan, G Subalakshmi, T Shalini, ... Journal of Semiconductors 35 (11), 114003, 2014 | 3 | 2014 |
| A survey on an optimal solution for VLSI circuit partitioning in physical design using DPSO & DFFA algorithms P Rajeswari, ST Chandra 2017 International Conference on Intelligent Sustainable Systems (ICISS …, 2017 | 1 | 2017 |
| Analytical approach and simulation of GaN single gate TFET and gate all around TFET TSA Samuel, N Arumugam, ST Chandra ECTI Transactions on Electrical Engineering, Electronics, and Communications …, 2017 | 1 | 2017 |
| Analytical Approach on the Scale Length Model for Tri-material Surrounding Gate Tunnel Field-Effect Transistors (TMSG-TFETs) P Vanitha, G Lakshmi Priya, NB Balamurugan, S Theodore Chandra, ... Intelligent Computing and Applications, 231-238, 2015 | 1 | 2015 |
| Compact modeling of gate engineered triple material gate (TMG) AlInSb/InSb high electron mobility transistors ST Chandra, NB Balamurugan, GL Priya, V Muralidharan, DSSR RANI Journal of Optoelectronics and Advanced Materials 17 (January-February 2015 …, 2015 | | 2015 |
| A Novel scaling theory for Single Gate AlInSb/InSb High Electron Mobility Transistors G LakshmiPriya, S Manikandan, NB Balamurugan, ST Chandra 2014 International Conference on Communication and Network Technologies, 211-215, 2014 | | 2014 |
| Electrical Characteristics of Silicon and Germanium Nanowire Transistors - A Simulation Study S Theodore Chandra, NB Balamurugan Communications, Devices and Intelligent Systems (CODIS), 2012 International …, 2012 | | 2012 |
| Two Dimensional Analytical Modeling of a Nanoscale Dual Material Gate MOSFETS NB Balamurugan, P Suveetha Dhanaselvam, P Vanitha, ... | | 2010 |
| Analytical modeling and simulation of high electron mobility transistors S Theodore Chandra Chennai, 0 | | |
N.B.Balamurugan (0000-0002-0541-6...Associate Professor,Thiagarajar College of EngineeringVerified email at tce.edu
