Saptarsi Ghosh
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High-resolution X-ray diffraction analysis of AlxGa1− xN/InxGa1− xN/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations
SK Jana, P Mukhopadhyay, S Ghosh, S Kabi, A Bag, R Kumar, D Biswas
Journal of Applied Physics 115 (17), 174507, 2014
Trapping effect analysis of AlGaN/InGaN/GaN Heterostructure by conductance frequency measurement
A Chakraborty, S Ghosh, P Mukhopadhyay, SM Dinara, A Bag, ...
MRS Proc 33, 81-87, 2014
Enhancement of two dimensional electron gas concentrations due to Si3N4 passivation on Al0. 3Ga0. 7N/GaN heterostructure: strain and interface capacitance analysis
SM Dinara, SK Jana, S Ghosh, P Mukhopadhyay, R Kumar, ...
AIP Advances 5 (4), 047136, 2015
A two-dimensional analytical-model-based comparative threshold performance analysis of SOI-SON MOSFETs
S Deb, S Ghosh, NB Singh, AK De, SK Sarkar
Journal of Semiconductors 32 (10), 104001, 2011
Thermodynamic analysis of acetone sensing in Pd/AlGaN/GaN heterostructure Schottky diodes at low temperatures
S Das, S Majumdar, R Kumar, S Ghosh, D Biswas
Scripta Materialia 113, 39-42, 2016
OFF-State Leakage and Current Collapse in AlGaN/GaN HEMTs: A Virtual Gate Induced by Dislocations
S Ghosh, S Das, SM Dinara, A Bag, A Chakraborty, P Mukhopadhyay, ...
IEEE Transactions on Electron Devices 65 (4), 1333-1339, 2018
Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaN heterostructures on sapphire with ultra thin buffer
MK Mahata, S Ghosh, SK Jana, A Chakraborty, A Bag, P Mukhopadhyay, ...
AIP Advances 4 (11), 117120, 2014
Highly Sensitive Acetone Sensor Based on Pd/AlGaN/GaN Resistive Device Grown by Plasma-Assisted Molecular Beam Epitaxy
S Das, S Ghosh, R Kumar, A Bag, D Biswas
IEEE Transactions on Electron Devices 64 (11), 4650-4656, 2017
Comparative DC Characteristic Analysis of AlGaN/GaN HEMTs Grown on Si (111) and Sapphire Substrates by MBE
P Mukhopadhyay, A Bag, U Gomes, U Banerjee, S Ghosh, S Kabi, ...
Journal of electronic materials 43 (4), 1263-1270, 2014
Effects of threading dislocations on drain current dispersion and slow transients in unpassivated AlGaN/GaN/Si heterostructure field-effect transistors
S Ghosh, SM Dinara, P Mukhopadhyay, SK Jana, A Bag, A Chakraborty, ...
Applied Physics Letters 105 (7), 073502, 2014
A novel growth strategy and characterization of fully relaxed un-tilted FCC GaAs on Si (100)
P Mukhopadhyay, R Kumar, S Ghosh, A Chakraborty, A Bag, S Kabi, ...
Journal of Crystal Growth 418, 138-144, 2015
Influence of growth morphology on electrical and thermal modeling of AlGaN/GaN HEMT on sapphire and silicon
P Mukhopadhyay, U Banerjee, A Bag, S Ghosh, D Biswas
Solid-State Electronics 104, 101-108, 2015
Origin (s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon
S Ghosh, A Hinz, SM Fairclough, BF Spiridon, A Eblabla, MA Casbon, ...
ACS applied electronic materials 3 (2), 813-824, 2021
Reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure
A Chakraborty, S Ghosh, P Mukhopadhyay, SK Jana, SM Dinara, A Bag, ...
Electronic Materials Letters 12 (2), 232-236, 2016
Evolution and analysis of nitride surface and interfaces by statistical techniques: A correlation with RHEED through kinetic roughening
A Bag, R Kumar, P Mukhopadhyay, MK Mahata, A Chakraborty, S Ghosh, ...
Electronic Materials Letters 11 (4), 707-716, 2015
Effect of trapped charge in AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by temperature dependent threshold voltage analysis
A Chakraborty, S Ghosh, P Mukhopadhyay, S Das, A Bag, D Biswas
Superlattices and Microstructures 113, 147-152, 2018
On the different origins of electrical parameter degradation in reverse‐bias stressed AlGaN/GaN HEMTs
S Ghosh, SM Dinara, M Mahata, S Das, P Mukhopadhyay, SK Jana, ...
physica status solidi (a) 213 (6), 1559-1563, 2016
Elimination of V-shaped pits in InGaN/GaN/AlN/GaN heterostructure by metal modulation growth technique
A Chakraborty, A Bag, P Mukhopadhyay, S Ghosh, D Biswas
Semiconductor Science and Technology 33 (3), 035009, 2018
An unified analytical model for design consideration of doped cubic and undoped hexagonal AlGaN/GaN MIS gate HEMTs
S Ghosh, A Bag, SK Jana, P Mukhopadhyay, SM Dinara, S Kabi, ...
Solid-State Electronics 96, 1-8, 2014
Two dimensional analytical modeling for SOI and SON MOSFET and their performance comparison
S Ghosh, KJ Singh, S Deb, SK Sarkar
Journal of Nano-and Electronic Physics 3 (1), 569, 2011
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