| High-resolution X-ray diffraction analysis of AlxGa1− xN/InxGa1− xN/GaN on sapphire multilayer structures: Theoretical, simulations, and experimental observations SK Jana, P Mukhopadhyay, S Ghosh, S Kabi, A Bag, R Kumar, D Biswas Journal of Applied Physics 115 (17), 174507, 2014 | 34 | 2014 |
| Trapping effect analysis of AlGaN/InGaN/GaN Heterostructure by conductance frequency measurement A Chakraborty, S Ghosh, P Mukhopadhyay, SM Dinara, A Bag, ... MRS Proc 33, 81-87, 2014 | 34 | 2014 |
| Enhancement of two dimensional electron gas concentrations due to Si3N4 passivation on Al0. 3Ga0. 7N/GaN heterostructure: strain and interface capacitance analysis SM Dinara, SK Jana, S Ghosh, P Mukhopadhyay, R Kumar, ... AIP Advances 5 (4), 047136, 2015 | 25 | 2015 |
| A two-dimensional analytical-model-based comparative threshold performance analysis of SOI-SON MOSFETs S Deb, S Ghosh, NB Singh, AK De, SK Sarkar Journal of Semiconductors 32 (10), 104001, 2011 | 23 | 2011 |
| Thermodynamic analysis of acetone sensing in Pd/AlGaN/GaN heterostructure Schottky diodes at low temperatures S Das, S Majumdar, R Kumar, S Ghosh, D Biswas Scripta Materialia 113, 39-42, 2016 | 22 | 2016 |
| OFF-State Leakage and Current Collapse in AlGaN/GaN HEMTs: A Virtual Gate Induced by Dislocations S Ghosh, S Das, SM Dinara, A Bag, A Chakraborty, P Mukhopadhyay, ... IEEE Transactions on Electron Devices 65 (4), 1333-1339, 2018 | 19 | 2018 |
| Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaN heterostructures on sapphire with ultra thin buffer MK Mahata, S Ghosh, SK Jana, A Chakraborty, A Bag, P Mukhopadhyay, ... AIP Advances 4 (11), 117120, 2014 | 15 | 2014 |
| Highly Sensitive Acetone Sensor Based on Pd/AlGaN/GaN Resistive Device Grown by Plasma-Assisted Molecular Beam Epitaxy S Das, S Ghosh, R Kumar, A Bag, D Biswas IEEE Transactions on Electron Devices 64 (11), 4650-4656, 2017 | 13 | 2017 |
| Comparative DC Characteristic Analysis of AlGaN/GaN HEMTs Grown on Si (111) and Sapphire Substrates by MBE P Mukhopadhyay, A Bag, U Gomes, U Banerjee, S Ghosh, S Kabi, ... Journal of electronic materials 43 (4), 1263-1270, 2014 | 13 | 2014 |
| Effects of threading dislocations on drain current dispersion and slow transients in unpassivated AlGaN/GaN/Si heterostructure field-effect transistors S Ghosh, SM Dinara, P Mukhopadhyay, SK Jana, A Bag, A Chakraborty, ... Applied Physics Letters 105 (7), 073502, 2014 | 12 | 2014 |
| A novel growth strategy and characterization of fully relaxed un-tilted FCC GaAs on Si (100) P Mukhopadhyay, R Kumar, S Ghosh, A Chakraborty, A Bag, S Kabi, ... Journal of Crystal Growth 418, 138-144, 2015 | 10 | 2015 |
| Influence of growth morphology on electrical and thermal modeling of AlGaN/GaN HEMT on sapphire and silicon P Mukhopadhyay, U Banerjee, A Bag, S Ghosh, D Biswas Solid-State Electronics 104, 101-108, 2015 | 9 | 2015 |
| Origin (s) of Anomalous Substrate Conduction in MOVPE-Grown GaN HEMTs on Highly Resistive Silicon S Ghosh, A Hinz, SM Fairclough, BF Spiridon, A Eblabla, MA Casbon, ... ACS applied electronic materials 3 (2), 813-824, 2021 | 7 | 2021 |
| Reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure A Chakraborty, S Ghosh, P Mukhopadhyay, SK Jana, SM Dinara, A Bag, ... Electronic Materials Letters 12 (2), 232-236, 2016 | 7 | 2016 |
| Evolution and analysis of nitride surface and interfaces by statistical techniques: A correlation with RHEED through kinetic roughening A Bag, R Kumar, P Mukhopadhyay, MK Mahata, A Chakraborty, S Ghosh, ... Electronic Materials Letters 11 (4), 707-716, 2015 | 7 | 2015 |
| Effect of trapped charge in AlGaN/GaN and AlGaN/InGaN/GaN heterostructure by temperature dependent threshold voltage analysis A Chakraborty, S Ghosh, P Mukhopadhyay, S Das, A Bag, D Biswas Superlattices and Microstructures 113, 147-152, 2018 | 6 | 2018 |
| On the different origins of electrical parameter degradation in reverse‐bias stressed AlGaN/GaN HEMTs S Ghosh, SM Dinara, M Mahata, S Das, P Mukhopadhyay, SK Jana, ... physica status solidi (a) 213 (6), 1559-1563, 2016 | 5 | 2016 |
| Elimination of V-shaped pits in InGaN/GaN/AlN/GaN heterostructure by metal modulation growth technique A Chakraborty, A Bag, P Mukhopadhyay, S Ghosh, D Biswas Semiconductor Science and Technology 33 (3), 035009, 2018 | 4 | 2018 |
| An unified analytical model for design consideration of doped cubic and undoped hexagonal AlGaN/GaN MIS gate HEMTs S Ghosh, A Bag, SK Jana, P Mukhopadhyay, SM Dinara, S Kabi, ... Solid-State Electronics 96, 1-8, 2014 | 4 | 2014 |
| Two dimensional analytical modeling for SOI and SON MOSFET and their performance comparison S Ghosh, KJ Singh, S Deb, SK Sarkar Journal of Nano-and Electronic Physics 3 (1), 569, 2011 | 4 | 2011 |
Dhrubes BiswasProfessor of Electronics, Indian Institute of Technology, KharagpurVerified email at ece.iitkgp.ernet.in
