| Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide GY Chung, CC Tin, JR Williams, K McDonald, RK Chanana, RA Weller, ... Electron Device Letters, IEEE 22 (4), 176-178, 2001 | 838 | 2001 |
| Fowler–Nordheim hole tunneling in p-SiC/SiO structures RK Chanana, K McDonald, M Di Ventra, ST Pantelides, LC Feldman, ... Applied Physics Letters 77, 2560, 2000 | 130 | 2000 |
| Effects of anneals in ammonia on the interface trap density near the band edges in 4H–silicon carbide metal-oxide-semiconductor capacitors G Chung, CC Tin, JR Williams, K McDonald, M Di Ventra, RK Chanana, ... Applied Physics Letters 77 (22), 3601-3603, 2000 | 92 | 2000 |
| Determination of hole effective mass in SiO2 and SiC conduction band offset using Fowler–Nordheim tunneling characteristics across metal-oxide-semiconductor structures after … R Kumar Chanana Journal of Applied Physics 109 (10), 2011 | 61 | 2011 |
| Passivation of the 4H-SiC/SiO2 Interface with Nitric Oxide JR Williams, GY Chung, CC Tin, K McDonald, D Farmer, RK Chanana, ... Materials Science Forum 389, 967-972, 2002 | 44 | 2002 |
| Interface state density and channel mobility for 4H-SiC MOSFETs with nitrogen passivation GY Chung, JR Williams, CC Tin, K McDonald, D Farmer, RK Chanana, ... Applied surface science 184 (1-4), 399-403, 2001 | 43 | 2001 |
| Determination of electron and hole effective masses in thermal oxide utilizing an n-channel silicon MOSFET RK Chanana IOSR J. Appl. Phys 6 (3), 1-7, 2014 | 33 | 2014 |
| BOEMDET-Band Offsets and Effective Mass Determination Technique utilizing Fowler-Nordheim tunneling slope constants in MIS devices on silicon RK Chanana IOSR Journal of Applied Physics 6 (4), 55-61, 2014 | 18 | 2014 |
| Nitrogen passivation of the interface states near the conduction band edge in 4H-silicon carbide JR Williams, GY Chung, CC Tin, K McDonald, D Farmer, RK Chanana, ... MRS Proceedings 640 (1), 2000 | 17 | 2000 |
| Interrelated current-voltage/capacitance-voltage traces based characterisation study on 4H-SiC metal-oxidesemiconductor devices in accumul ation and Si device in inversion … RK Chanana IOSR-JEEE 14 (3), 49-63, 2019 | 15 | 2019 |
| BOEMDET-band offsets and effective mass determination technique applied to MIS devices on silicon to obtain the unknown bandgap of insulators RK Chanana IOSR J. Appl. Phys 6 (6), 48-55, 2014 | 13 | 2014 |
| Effect of annealing and plasma precleaning on the electrical properties of N2O/SiH4 PECVD oxide as gate material in MOSFETs and CCDs RK Chanana, R Dwivedi, SK Srivastava Solid-state electronics 36 (7), 1021-1026, 1993 | 13 | 1993 |
| Intrinsic Fermi level and charged intrinsic defects density in doped semiconductors from the band offsets of MIS device interfaces RK Chanana IOSR-JAP 9 (6), 1-7, 2017 | 12 | 2017 |
| Bonding, defects, and defect dynamics in the SiC-SiO2 system ST Pantelides, R Buczko, MD Ventra, S Wang, SG Kim, SJ Pennycook, ... MRS Proceedings 640 (1), 2000 | 12 | 2000 |
| High density of deep acceptor traps near the 4H-SiC conduction band limits surface mobility and dielectric breakdown field in an n-channel 4H-SiC MOSFET RK Chanana IOSR-JEEE 14 (4), 1-8, 2019 | 11 | 2019 |
| Silicon wafer cleaning with CF4/H2 plasma and its effect on the properties of dry thermally grown oxide RK Chanana, R Dwivedi, SK Srivastava Solid-state electronics 35 (10), 1417-1421, 1992 | 11 | 1992 |
| N-channel silicon MOSFET as a device to characterize MIS structures by the BOEMDET technique RK Chanana IOSR-J. Appl. Phys 7 (4), 17-25, 2015 | 10 | 2015 |
| The effects of buffer thickness on GaAs MESFET characteristics: channel–substrate current, drain breakdown, and reliability F Gao, R Chanana, T Nicholls Microelectronics Reliability 42 (7), 1003-1010, 2002 | 10 | 2002 |
| A new method of calculating charged deep level defects density in doped semiconductors from the band offsets of MIS device interfaces RK Chanana IOSR-JAP 8 (4), 53-56, 2016 | 8 | 2016 |
| On the ionization in silicon dioxide of a MOS device and its relation to the density of the oxide RK Chanana IOSR-J. Appl. Phys 12 (6), 1-5, 2020 | 7 | 2020 |
