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Chengcheng Xiao
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Room-temperature ferroelectricity in MoTe2 down to the atomic monolayer limit
S Yuan, X Luo, HL Chan, C Xiao, Y Dai, M Xie, J Hao
Nature communications 10 (1), 1775, 2019
3522019
Elemental ferroelectricity and antiferroelectricity in Group‐V monolayer
C Xiao, F Wang, SA Yang, Y Lu, Y Feng, S Zhang
Advanced Functional Materials 28 (17), 1707383, 2018
1642018
Two-dimensional ferroelectricity and switchable spin-textures in ultra-thin elemental Te multilayers
Y Wang, C Xiao, M Chen, C Hua, J Zou, C Wu, J Jiang, SA Yang, Y Lu, ...
Materials Horizons 5 (3), 521-528, 2018
962018
Enhanced photoelectrical response of thermodynamically epitaxial organic crystals at the two-dimensional limit
M Cao, C Zhang, Z Cai, C Xiao, X Chen, K Yi, Y Yang, Y Lu, D Wei
Nature Communications 10 (1), 756, 2019
772019
Ferroelectric control of single-molecule magnetism in 2D limit
X Wang, C Xiao, C Yang, M Chen, SA Yang, J Hu, Z Ren, H Pan, W Zhu, ...
Science Bulletin 65 (15), 1252-1259, 2020
342020
Coexistence of Ferroelectricity and Ferromagnetism in One-Dimensional SbN and BiN Nanowires
C Yang, M Chen, S Li, X Zhang, C Hua, H Bai, C Xiao, SA Yang, P He, ...
ACS Applied Materials & Interfaces 13 (11), 13517-13523, 2021
182021
Investigations on molybdenum dinitride as a promising anode material for Na-ion batteries from first-principle calculations
Z Lan, M Chen, X Xu, C Xiao, F Wang, Y Wang, Y Lu, Y Jiang, J Jiang
Journal of Alloys and Compounds 701, 875-881, 2017
182017
Realization of a new topological crystalline insulator and Lifshitz transition in pbte
S Ma, C Guo, C Xiao, F Wu, M Smidman, Y Lu, H Yuan, H Wu
Advanced Functional Materials 28 (37), 1803188, 2018
152018
Electronic structures of ultra-thin tellurium nanoribbons
Z Liang, Y Wang, C Hua, C Xiao, M Chen, Z Jiang, R Tai, Y Lu, F Song
Nanoscale 11 (30), 14134-14140, 2019
132019
Spontaneous symmetry lowering of Si (001) towards two-dimensional ferro/antiferroelectric behavior
C Xiao, X Wang, X Pi, SA Yang, Y Feng, Y Lu, S Zhang
Physical Review Materials 3 (4), 044410, 2019
72019
Layer-dependent semiconductor-metal transition of SnO/Si (001) heterostructure and device application
C Xiao, F Wang, Y Wang, SA Yang, J Jiang, M Yang, Y Lu, S Wang, ...
Scientific Reports 7 (1), 2570, 2017
62017
Origin and electronic behavior of improper ferroelectricity in AB2 (A= Cr, Mo, W; B= S, Se, Te) transition metal dichalcogenides
C Xiao, ZA Xu, X Luo, Y Lu
arXiv preprint arXiv:2001.03164, 2020
12020
Ferroelectricity and Antiferroelectricity in Elemental Group-V Monolayer Materials
C Xiao, F Wang, SA Yang, Y Lu
arXiv preprint arXiv:1706.05629, 2017
2017
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