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Shilpi Birla
Shilpi Birla
Associate Professor,Manipal University Jaipur
Verified email at jaipur.manipal.edu
Title
Cited by
Cited by
Year
Static noise margin analysis of various SRAM topologies
S Birla, RK Singh, M Pattnaik
International Journal of Engineering and Technology 3 (3), 304, 2011
702011
Device and circuit design challenges for low leakage SRAM for ultra low power applications
S Birla, NK Shukla, M Pattanaik, RK Singh
Canadian Journal on Electrical & Electronics Engineering 1 (7), 156-167, 2010
502010
Analysis of the data stability and leakage power in the various SRAM cells topologies
S Birla, NK Shukla, M Pattnaik, RK Singh
International Journal of Engineering Science and Technology 2 (7), 2936-2944, 2010
302010
Ultra-low-power and stable 10-nm FinFET 10T sub-threshold SRAM
E Abbasian, S Birla, M Gholipour
Microelectronics Journal 123, 105427, 2022
292022
Leakage Current reduction in 6T single cell SRAM at 90nm technology
S Birla, NK Shukla, D Mukherjee, RK Singh
2010 International Conference on Advances in Computer Engineering, 292-294, 2010
282010
Speed and leakage power trade-off in various SRAM circuits
NK Shukla, S Birla, RK Singh, M Pattanaik
International Journal of Computer and Electrical Engineering 3 (2), 244, 2011
272011
A single-bitline 9T SRAM for low-power near-threshold operation in FinFET technology
E Abbasian, M Gholipour, S Birla
Arabian Journal for Science and Engineering 47 (11), 14543-14559, 2022
262022
A comprehensive analysis of different SRAM cell topologies in 7-nm FinFET technology
E Abbasian, S Birla, M Gholipour
Silicon, 1-12, 2021
232021
Analysis of 8T SRAM Cell at Various Process Corners at 65 nm Process Technology.
S Birla, NK Shukla, K Rathi, RK Singh, M Pattanaik
Circuits Syst. 2 (4), 326-329, 2011
212011
Leakage current minimization in deep-submicron conventional single cell SRAM
NK Shukla, D Mukherjee, S Birla, RK Singh
2010 International Conference on Recent Trends in Information …, 2010
162010
A review on effect of various high-k dielectric materials on the performance of FinFET device
J Kumar, S Birla, G Agarwal
Materials Today: Proceedings 79, 297-302, 2023
132023
A 9T high-stable and low-energy half-select-free SRAM cell design using TMDFETs
E Abbasian, S Birla, M Gholipour
Analog Integrated Circuits and Signal Processing 112 (1), 141-149, 2022
112022
Electrical transport properties of thermally stable n-ZnO/AlN/p-Si diode grown using RF sputtering
CP Gupta, AK Singh, PK Jain, SK Sharma, S Birla, S Sancheti
Materials Science in Semiconductor Processing 128, 105734, 2021
112021
Low leakage SRAM cell with improved stability for iot applications
C Duari, S Birla
Procedia Computer Science 171, 1469-1478, 2020
112020
Variability aware FinFET SRAM cell with improved stability and power for low power applications
S Birla
Circuit World 45 (4), 196-207, 2019
112019
Stability and leakage analysis of a novel pp based 9t sram cell using n curve at deep submicron technology for multimedia applications
S Birla, RK Singh, M Pattanaik
Circuits and Systems 2 (04), 274, 2011
112011
Design and investigation of stability‐and power‐improved 11T SRAM cell for low‐power devices
E Abbasian, S Birla, E Mojaveri Moslem
International Journal of Circuit Theory and Applications 50 (11), 3827-3845, 2022
102022
A dual port 8T SRAM cell using FinFET & CMOS logic for leakage reduction and enhanced read & write stability
C Duari, S Birla, AK Singh
Journal of Integrated Circuits and Systems 15 (2), 1-7, 2020
102020
Color image watermarking with watermark authentication against false positive detection using SVD
N Singh, S Joshi, S Birla
International Conference on Sustainable Computing in Science, Technology and …, 2019
102019
Characterization of 9t sram cell at various process corners at deep sub-micron technology for multimedia applications
RK Singh, S Birla, M Pattanaik
International Journal of Engineering and Technology 3 (6), 696, 2011
102011
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