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Jin-Goo Park
Jin-Goo Park
Professor of Materials Engineering, Hanyang University
Verified email at hanyang.ac.kr - Homepage
Title
Cited by
Cited by
Year
Interfacial and electrokinetic characterization of IPA solutions related to semiconductor wafer drying and cleaning
JG Park, SH Lee, JS Ryu, YK Hong, TG Kim, AA Busnaina
Journal of the Electrochemical society 153 (9), G811, 2006
1222006
Evaluation of double sided lapping using a fixed abrasive pad for sapphire substrates
HM Kim, R Manivannan, DJ Moon, H Xiong, JG Park
Wear 302 (1-2), 1340-1344, 2013
1032013
Scratch formation and its mechanism in chemical mechanical planarization (CMP)
TY Kwon, M Ramachandran, JG Park
Friction 1, 279-305, 2013
942013
Large scale directed assembly of nanoparticles using nanotrench templates
X Xiong, P Makaram, A Busnaina, K Bakhtari, S Somu, N McGruer, J Park
Applied physics letters 89 (19), 2006
792006
The effect of additives in post-Cu CMP cleaning on particle adhesion and removal
YK Hong, DH Eom, SH Lee, TG Kim, JG Park, AA Busnaina
Journal of The Electrochemical Society 151 (11), G756, 2004
742004
Investigation of cu-BTA complex formation during Cu chemical mechanical planarization process
BJ Cho, S Shima, S Hamada, JG Park
Applied Surface Science 384, 505-510, 2016
682016
On the mechanism of material removal by fixed abrasive lapping of various glass substrates
BJ Cho, HM Kim, R Manivannan, DJ Moon, JG Park
Wear 302 (1-2), 1334-1339, 2013
672013
Effect of pH in Ru slurry with sodium periodate on Ru CMP
IK Kim, BG Cho, JG Park, JY Park, HS Park
Journal of the Electrochemical Society 156 (3), H188, 2009
652009
Characterization of TMAH based cleaning solution for post Cu-CMP application
RP Venkatesh, TY Kwon, YN Prasad, S Ramanathan, JG Park
Microelectronic engineering 102, 74-80, 2013
642013
Comparison between sapphire lapping processes using 2-body and 3-body modes as a function of diamond abrasive size
HM Kim, GH Park, YG Seo, DJ Moon, BJ Cho, JG Park
Wear 332, 794-799, 2015
562015
Characterization of non-amine-based post-copper chemical mechanical planarization cleaning solution
R Manivannan, BJ Cho, X Hailin, S Ramanathan, JG Park
Microelectronic engineering 122, 33-39, 2014
502014
The effect of hydrogen peroxide in a citric acid based copper slurry on Cu polishing
DH Eom, IK Kim, JH Han, JG Park
Journal of the Electrochemical Society 154 (1), D38, 2006
502006
Effect of dissolved gases in water on acoustic cavitation and bubble growth rate in 0.83 MHz megasonic of interest to wafer cleaning
BK Kang, MS Kim, JG Park
Ultrasonics sonochemistry 21 (4), 1496-1503, 2014
482014
Interaction forces between silica particles and wafer surfaces during chemical mechanical planarization of copper
SY Lee, SH Lee, JG Park
Journal of The Electrochemical Society 150 (5), G327, 2003
452003
Selection and optimization of corrosion inhibitors for improved Cu CMP and post-Cu CMP cleaning
HY Ryu, BJ Cho, NP Yerriboina, CH Lee, JK Hwang, S Hamada, Y Wada, ...
ECS Journal of Solid State Science and Technology 8 (5), P3058, 2019
442019
Effects of drying methods and wettability of silicon on the formation of water marks in semiconductor processing
JG Park, MF Pas
Journal of the Electrochemical Society 142 (6), 2028, 1995
421995
Generation of pad debris during oxide CMP process and its role in scratch formation
YN Prasad, TY Kwon, IK Kim, IG Kim, JG Park
Journal of the Electrochemical Society 158 (4), H394, 2011
412011
Electrochemical impedance spectroscopy (EIS) analysis of BTA removal by TMAH during post Cu CMP cleaning process
RP Venkatesh, BJ Cho, S Ramanathan, JG Park
Journal of The Electrochemical Society 159 (11), C447, 2012
402012
Effect of sodium periodate in alumina-based slurry on Ru CMP for metal–insulator–metal capacitor
IK Kim, YJ Kang, TY Kwon, BG Cho, JG Park, JY Park, HS Park
Electrochemical and Solid-State Letters 11 (6), H150, 2008
382008
Experimental and analytical study of submicrometer particle removal from deep trenches
K Bakhtari, RO Guldiken, AA Busnaina, JG Park
Journal of the Electrochemical Society 153 (9), C603, 2006
362006
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