Alton Horsfall
Alton Horsfall
Associate Professor in Electrical Engineering
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SiC sensors: a review
NG Wright, AB Horsfall
Journal of Physics D: Applied Physics 40 (20), 6345, 2007
Formation and role of graphite and nickel silicide in nickel based ohmic contacts to -type silicon carbide
IP Nikitina, KV Vassilevski, NG Wright, AB Horsfall, AG O’Neill, ...
Journal of Applied Physics 97 (8), 083709, 2005
Prospects for SiC electronics and sensors
NG Wright, AB Horsfall, K Vassilevski
Materials today 11 (1-2), 16-21, 2008
Protection of selectively implanted and patterned silicon carbide surfaces with graphite capping layer during post-implantation annealing
KV Vassilevski, NG Wright, IP Nikitina, AB Horsfall, AG O'neill, MJ Uren, ...
Semiconductor Science and Technology 20 (3), 271, 2005
Leakage current and charge trapping behavior in Ti O 2∕ Si O 2 high-κ gate dielectric stack on 4 H‐Si C substrate
R Mahapatra, AK Chakraborty, N Poolamai, A Horsfall, S Chattopadhyay, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2007
Calculated electron affinity and stability of halogen-terminated diamond
AK Tiwari, JP Goss, PR Briddon, NG Wright, AB Horsfall, R Jones, H Pinto, ...
Physical Review B 84 (24), 245305, 2011
The role of carbon contamination in voltage linearity and leakage current in high- metal-insulator-metal capacitors
B Miao, R Mahapatra, N Wright, A Horsfall
Journal of Applied Physics 104 (5), 054510, 2008
High temperature measurements of metal contacts on epitaxial graphene
VK Nagareddy, IP Nikitina, DK Gaskill, JL Tedesco, RL Myers-Ward, ...
Applied Physics Letters 99 (7), 073506, 2011
Recent progress and current issues in SiC semiconductor devices for power applications
CM Johnson, NG Wright, MJ Uren, KP Hilton, M Rahimo, DA Hinchley, ...
IEE Proceedings-Circuits, Devices and Systems 148 (2), 101-108, 2001
Design and performance evaluation of SiC based DC-DC converters for PV applications
O Mostaghimi, N Wright, A Horsfall
2012 IEEE Energy Conversion Congress and Exposition (ECCE), 3956-3963, 2012
Device processing and characterisation of high temperature silicon carbide Schottky diodes
KV Vassilevski, IP Nikitina, NG Wright, AB Horsfall, AG O’Neill, ...
Microelectronic engineering 83 (1), 150-154, 2006
Nanoindentation assessment of aluminium metallisation; the effect of creep and pile-up
S Soare, SJ Bull, AG O'Neil, N Wright, A Horsfall, JMM dos Santos
Surface and Coatings Technology 177, 497-503, 2004
Direct measurement of residual stress in sub-micron interconnects
AB Horsfall, JMM Dos Santos, SM Soare, NG Wright, AG O'neill, SJ Bull, ...
Semiconductor science and technology 18 (11), 992, 2003
Energy-band alignment of gate dielectric stack
R Mahapatra, AK Chakraborty, AB Horsfall, NG Wright, G Beamson, ...
Applied physics letters 92 (4), 042904, 2008
High voltage silicon carbide Schottky diodes with single zone junction termination extension
K Vassilevski, IP Nikitina, AB Horsfall, NG Wright, AG O'Neill, KP Hilton, ...
Materials science forum 556, 873-876, 2007
Effects of interface engineering for gate dielectric stack on
R Mahapatra, AK Chakraborty, AB Horsfall, S Chattopadhyay, NG Wright, ...
Journal of Applied Physics 102 (2), 024105, 2007
Semi-transparent SiC Schottky diodes for X-ray spectroscopy
JE Lees, DJ Bassford, GW Fraser, AB Horsfall, KV Vassilevski, NG Wright, ...
Nuclear Instruments and Methods in Physics Research Section A: Accelerators …, 2007
4H-SiC rectifiers with dual metal planar Schottky contacts
KV Vassilevski, AB Horsfall, CM Johnson, NG Wright, AG O'Neill
IEEE Transactions on Electron Devices 49 (5), 947-949, 2002
Characterisation of 4H-SiC Schottky diodes for IGBT applications
CM Johnson, M Rahimo, NG Wright, DA Hinchley, AB Horsfall, ...
Conference Record of the 2000 IEEE Industry Applications Conference. Thirty …, 2000
SiC X-ray detectors for harsh environments
JE Lees, AM Barnett, DJ Bassford, RC Stevens, AB Horsfall
Journal of Instrumentation 6 (01), C01032, 2011
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