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Subramaniam Arulkumaran
Subramaniam Arulkumaran
Temasek Laboratories@NTU, Nanyang Technological University
Verified email at ntu.edu.sg
Title
Cited by
Cited by
Year
Surface passivation effects on AlGaN/GaN high-electron-mobility transistors with and silicon oxynitride
S Arulkumaran, T Egawa, H Ishikawa, T Jimbo, Y Sano
Applied Physics Letters 84 (4), 613-615, 2004
2852004
Investigations of and insulator–semiconductor interfaces with low interface state density
S Arulkumaran, T Egawa, H Ishikawa, T Jimbo, M Umeno
Applied Physics Letters 73 (6), 809-811, 1998
2471998
Enhancement of breakdown voltage by AlN buffer layer thickness in AlGaN∕ GaN high-electron-mobility transistors on 4in. diameter silicon
S Arulkumaran, T Egawa, S Matsui, H Ishikawa
Applied Physics Letters 86 (12), 2005
1402005
Reduced surface leakage current and trapping effects in AlGaN/GaN high electron mobility transistors on silicon with SiN/Al2O3 passivation
ZH Liu, GI Ng, H Zhou, S Arulkumaran, YKT Maung
Applied Physics Letters 98 (11), 2011
1392011
Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3…
ZH Liu, GI Ng, S Arulkumaran, YKT Maung, KL Teo, SC Foo, ...
Applied Physics Letters 95 (22), 2009
1362009
Characterization of different-Al-content heterostructures and high-electron-mobility transistors on sapphire
S Arulkumaran, T Egawa, H Ishikawa, T Jimbo
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer…, 2003
1352003
High-temperature effects of AlGaN/GaN high-electron-mobility transistors on sapphire and semi-insulating SiC substrates
S Arulkumaran, T Egawa, H Ishikawa, T Jimbo
Applied physics letters 80 (12), 2186-2188, 2002
1342002
AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si (111)
S Tripathy, VKX Lin, SB Dolmanan, JPY Tan, RS Kajen, LK Bera, SL Teo, ...
Applied Physics Letters 101 (8), 2012
1232012
Temperature dependence of gate–leakage current in AlGaN/GaN high-electron-mobility transistors
S Arulkumaran, T Egawa, H Ishikawa, T Jimbo
Applied physics letters 82 (18), 3110-3112, 2003
1092003
Temperature-dependent forward gate current transport in atomic-layer-deposited Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor
ZH Liu, GI Ng, S Arulkumaran, YKT Maung, H Zhou
Applied Physics Letters 98 (16), 2011
992011
Effects of annealing on Ti, Pd, and Ni/n-Al/sub 0.11/Ga/sub 0.89/N Schottky diodes
S Arulkumaran, T Egawa, H Ishikawa, M Umeno, T Jimbo
IEEE Transactions on Electron Devices 48 (3), 573-580, 2001
942001
Atomic layer deposition of ZrO2 as gate dielectrics for AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors on silicon
G Ye, H Wang, S Arulkumaran, GI Ng, R Hofstetter, Y Li, MJ Anand, ...
Applied Physics Letters 103 (14), 2013
882013
Improved dc characteristics of AlGaN/GaN high-electron-mobility transistors on AlN/sapphire templates
S Arulkumaran, M Sakai, T Egawa, H Ishikawa, T Jimbo, T Shibata, K Asai, ...
Applied physics letters 81 (6), 1131-1133, 2002
872002
High Microwave-Noise Performance of AlGaN/GaN MISHEMTs on Silicon With Gate Insulator Grown by ALD
ZH Liu, GI Ng, S Arulkumaran, YKT Maung, KL Teo, SC Foo, ...
IEEE electron device letters 31 (2), 96-98, 2009
842009
Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si (111) substrate
S Arulkumaran, GI Ng, S Vicknesh, H Wang, KS Ang, JPY Tan, VK Lin, ...
Japanese Journal of Applied Physics 51 (11R), 111001, 2012
832012
Studies on the influences of i-GaN, n-GaN, p-GaN and InGaN cap layers in AlGaN/GaN high-electron-mobility transistors
S Arulkumaran, T Egawa, H Ishikawa
Japanese journal of applied physics 44 (5R), 2953, 2005
802005
Temperature dependence of Ohmic contact characteristics in AlGaN/GaN high electron mobility transistors from− 50 to 200 C
ZH Liu, S Arulkumaran, GI Ng
Applied physics letters 94 (14), 2009
792009
Improved Linearity for Low-Noise Applications in 0.25-GaN MISHEMTs Using ALDas Gate Dielectric
ZH Liu, GI Ng, S Arulkumaran, YKT Maung, KL Teo, SC Foo, ...
IEEE Electron Device Letters 31 (8), 803-805, 2010
752010
Improved Power Device Figure-of-Merit (4.0 108 V2 Ω-1 cm-2) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si
S Arulkumaran, S Vicknesh, NG Ing, SL Selvaraj, T Egawa
Applied physics express 4 (8), 084101, 2011
742011
Studies on electron beam evaporated ZrO2/AlGaN/GaN metal–oxide–semiconductor high‐electron‐mobility transistors
K Balachander, S Arulkumaran, H Ishikawa, K Baskar, T Egawa
physica status solidi (a) 202 (2), R16-R18, 2005
722005
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