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Abdur Rehman Anwar
Abdur Rehman Anwar
Young Researcher at Jozef Stefan Institute, Ljubljana, Slovenia
Verified email at ijs.si
Title
Cited by
Cited by
Year
Recent progress in micro‐LED‐based display technologies
AR Anwar, MT Sajjad, MA Johar, CA Hernández‐Gutiérrez, M Usman, ...
Laser & Photonics Reviews 16 (6), 2100427, 2022
992022
Green gap in GaN-based light-emitting diodes: in perspective
M Usman, M Munsif, U Mushtaq, AR Anwar, N Muhammad
Critical Reviews in Solid State and Materials Sciences 46 (5), 450-467, 2021
352021
Quantum efficiency enhancement by employing specially designed AlGaN electron blocking layer
M Usman, M Munsif, AR Anwar, H Jamal, S Malik, NU Islam
Superlattices and Microstructures 139, 106417, 2020
242020
Zigzag-shaped quantum well engineering of green light-emitting diode
M Usman, M Munsif, AR Anwar, U Mushtaq, WA Imtiaz, DP Han, ...
Superlattices and Microstructures 132, 106164, 2019
242019
Wedge-shaped electron blocking layer to improve hole transport and efficiency in green light-emitting diodes
M Usman, M Munsif, AR Anwar
Optics Communications 464, 125493, 2020
232020
Analytical analysis of internal quantum efficiency with polarization fields in GaN-based light-emitting diodes
M Usman, AR Anwar, M Munsif, S Malik, NU Islam
Superlattices and Microstructures 135, 106271, 2019
232019
Amelioration of internal quantum efficiency of green GaN-based light-emitting diodes by employing variable active region
M Usman, AR Anwar, M Munsif, DP Han, K Saba
Physica E: Low-dimensional Systems and Nanostructures 117, 113826, 2020
142020
Enhancement of the optoelectronic performance of p-down multiquantum well N-GaN light-emitting diodes
M Usman, U Mushtaq, M Munsif, AR Anwar, M Kamran
Physica Scripta 94 (10), 105808, 2019
102019
Microcavity-and Microlaser-Based Optical Barcoding: A Review of Encoding Techniques and Applications
AR Anwar, M Mur, M Humar
ACS photonics 10 (5), 1202-1224, 2023
82023
Analysis of various electron blocking layers to improve efficiency in green light-emitting diodes
M Usman, AR Anwar, K Saba, M Munsif
Ceramics International 46 (11), 18464-18468, 2020
72020
a survey of simulations on device engineering of GaN-based light-emitting diodes
M Usman, AR Anwar, M Munsif
ECS Journal of Solid State Science and Technology 9 (6), 066002, 2020
62020
High internal quantum efficiency of green GaN-based light-emitting diodes by thickness-graded last well/last barrier and composition-graded electron blocking layer
M Usman, M Munsif, AR Anwar
Optical and Quantum Electronics 52, 1-10, 2020
62020
Reduction of efficiency droop by inserting superlattice quaternary-ternary electron blocking layer in GaN-based light-emitting diodes
AR Anwar, M Usman, M Munsif, K Saba
Materials Science and Engineering: B 271, 115279, 2021
52021
theoretical and computational analysis of a wurtzite-AlGaN DUV-LED to mitigate quantum-confined Stark effect with a zincblende comparison considering Mg-and Be-doping
HI Solís-Cisneros, Y Hu, JL Camas-Anzueto, R Grajales-Coutiño, ...
Nanomaterials 12 (23), 4347, 2022
42022
Increasing the internal quantum efficiency of green GaN-based light-emitting diodes by employing graded quantum well and electron blocking layer
M Usman, AR Anwar, M Munsif, S Malik, NU Islam, T Jameel
Optical and Quantum Electronics 52, 1-7, 2020
42020
Polarization-induced phase transitions in ultra-thin InGaN-based double quantum wells
SP Łepkowski, AR Anwar
Nanomaterials 12 (14), 2418, 2022
32022
Physical and technological analysis of the AlGaN-based UVC-LED: An extended discussion focused on cubic phase as an alternative for surface disinfection
HI Solís-Cisneros, CA Hernández-Gutiérrez, A Anwar, ...
Revista mexicana de física 68 (2), 2022
32022
Third-order elastic constants and biaxial relaxation coefficient in wurtzite group-III nitrides by hybrid-density functional theory calculations
SP Łepkowski, AR Anwar
Journal of Physics: Condensed Matter 33 (35), 355402, 2021
32021
Hole transport enhancement by thickness-and composition-grading of electron blocking layer
M Usman, M Munsif, AR Anwar, S Malik, NU Islam, S Khan
Optical Engineering 60 (3), 036101-036101, 2021
32021
Droop-free internal quantum efficiency of p-InGaN/p-GaN superlattice electron blocking layer
M Usman, AR Anwar, K Saba, M Munsif
Optik 223, 165514, 2020
32020
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Articles 1–20