| Analysis of the Significant Rise in Breakdown Voltage of GaN HEMTs From Near-Threshold to Deep Off-State Gate Bias Conditions B Prasannanjaneyulu, S Mishra, S Karmalkar IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY 19 (4), 766-773, 2019 | 11 | 2019 |
| Relative effectiveness of high-k passivation and gate-connected field plate techniques in enhancing GaN HEMT breakdown B Prasannanjaneyulu, S Karmalkar Microelectronics Reliability 110, 113698, 2020 | 6 | 2020 |
| Mechanism and enhancement of the near-threshold low OFF-state breakdown voltage in gallium nitride high electron mobility transistors B Prasannanjaneyulu, S Bhattacharya, S Karmalkar Japanese Journal of Applied Physics 58 (SC), SCCD01, 2019 | 3 | 2019 |
| Performance optimisation of junctionless FET in nano regime using segmented channel-A 3D numerical simulation study SP Scarlet, B Prasannanjaneyulu, R Srinivasan Superlattices and Microstructures 111, 1233-1243, 2017 | 1 | 2017 |
| Extraction of the edge/areal components and path of the reverse gate leakage in a GaN HEMT from measurements B Prasannanjaneyulu, DS Rawal, S Karmalkar Semiconductor Science and Technology 37 (4), 7, 2022 | | 2022 |
| Enhancement of Near-Threshold Low OFF-State Breakdown Voltage in Short-Channel Gallium Nitride High Electron Mobility Transistors B Prasannanjaneyulu, A Malik, S Karmalkar International Workshop on Nitride Semiconductors (IWN-2018), 2018 | | 2018 |
| Path and Distribution of the Reverse Gate Leakage in a GaN HEMT B Prasannanjaneyulu, DS Rawal, S Karmalkar International Conference on Emerging Electronics (ICEE-2018), 2018 | | 2018 |
Priscilla ScarletCVR College of EngineeringVerified email at cvr.ac.in
