Deyi Fu
Deyi Fu
Department of Physics, Xiamen University
Verified email at xmu.edu.cn
Title
Cited by
Cited by
Year
Doping against the Native Propensity of MoS2: Degenerate Hole Doping by Cation Substitution
J Suh, TE Park, DY Lin, D Fu, J Park, HJ Jung, Y Chen, C Ko, C Jang, ...
Nano letters 14 (12), 6976-6982, 2014
4952014
Elastic Properties of Chemical-Vapor-Deposited Monolayer MoS2, WS2, and Their Bilayer Heterostructures
K Liu, Q Yan, M Chen, W Fan, Y Sun, J Suh, D Fu, S Lee, J Zhou, ...
Nano letters 14 (9), 5097-5103, 2014
3752014
Efficient photovoltaic current generation at ferroelectric domain walls
J Seidel, D Fu, SY Yang, E Alarcón-Lladó, J Wu, R Ramesh, JW Ager III
Physical review letters 107 (12), 126805, 2011
3452011
Chemical Vapor Deposition of Large-Size Monolayer MoSe2 Crystals on Molten Glass
J Chen, X Zhao, SJR Tan, H Xu, B Wu, B Liu, D Fu, W Fu, D Geng, Y Liu, ...
Journal of the American Chemical Society 139 (3), 1073-1076, 2017
1642017
Comprehensive study of the metal-insulator transition in pulsed laser deposited epitaxial VO2 thin films
D Fu, K Liu, T Tao, K Lo, C Cheng, B Liu, R Zhang, HA Bechtel, J Wu
Journal of Applied Physics 113 (4), 043707, 2013
1342013
Molecular beam epitaxy of highly crystalline monolayer molybdenum disulfide on hexagonal boron nitride
D Fu, X Zhao, YY Zhang, L Li, H Xu, AR Jang, SI Yoon, P Song, SM Poh, ...
Journal of the American Chemical Society 139 (27), 9392-9400, 2017
942017
Signals for specular Andreev reflection
Q Zhang, D Fu, B Wang, R Zhang, DY Xing
Physical review letters 101 (4), 047005, 2008
912008
Ferroelectrically gated atomically thin transition‐metal dichalcogenides as nonvolatile memory
C Ko, Y Lee, Y Chen, J Suh, D Fu, A Suslu, S Lee, JD Clarkson, HS Choe, ...
Advanced Materials 28 (15), 2923-2930, 2016
852016
Achieving Ultrafast Hole Transfer at the Monolayer MoS2 and CH3NH3PbI3 Perovskite Interface by Defect Engineering
B Peng, G Yu, Y Zhao, Q Xu, G Xing, X Liu, D Fu, B Liu, JRS Tan, W Tang, ...
ACS nano 10 (6), 6383-6391, 2016
842016
Simultaneous Enhancement of Electrical Conductivity and Thermopower of Bi2Te3 by Multifunctionality of Native Defects
J Suh, KM Yu, D Fu, X Liu, F Yang, J Fan, DJ Smith, YH Zhang, ...
Advanced materials 27 (24), 3681-3686, 2015
742015
Powerful, multifunctional torsional micromuscles activated by phase transition
K Liu, C Cheng, J Suh, R Tang‐Kong, D Fu, S Lee, J Zhou, LO Chua, ...
Advanced Materials 26 (11), 1746-1750, 2014
742014
MoS2 Heterojunctions by Thickness Modulation
JWAJ Mahmut Tosun, Deyi Fu, Sujay B. Desai, Changhyun Ko, Jeong Seuk Kang ...
Scientific Reports 5, 10990, 2015
72*2015
Gate-dependent pseudospin mixing in graphene/boron nitride moiré superlattices
Z Shi, C Jin, W Yang, L Ju, J Horng, X Lu, HA Bechtel, MC Martin, D Fu, ...
Nature Physics 10 (10), 743-747, 2014
722014
Intensity tunable infrared broadband absorbers based on VO 2 phase transition using planar layered thin films
H Kocer, S Butun, E Palacios, Z Liu, S Tongay, D Fu, K Wang, J Wu, ...
Scientific reports 5 (1), 1-7, 2015
712015
Mo-terminated edge reconstructions in nanoporous molybdenum disulfide film
X Zhao, D Fu, Z Ding, YY Zhang, D Wan, SJR Tan, Z Chen, K Leng, J Dan, ...
Nano letters 18 (1), 482-490, 2018
652018
Self-assembly and horizontal orientation growth of VO 2 nanowires
C Cheng, H Guo, A Amini, K Liu, D Fu, J Zou, H Song
Scientific reports 4 (1), 1-5, 2014
652014
Dense electron system from gate-controlled surface metal–insulator transition
K Liu, D Fu, J Cao, J Suh, KX Wang, C Cheng, DF Ogletree, H Guo, ...
Nano letters 12 (12), 6272-6277, 2012
552012
Nonpolar -plane thin film GaN and light-emitting diodes on substrates
B Liu, R Zhang, ZL Xie, CX Liu, JY Kong, J Yao, QJ Liu, Z Zhang, DY Fu, ...
Applied Physics Letters 91 (25), 253506, 2007
532007
Electrothermal dynamics of semiconductor nanowires under local carrier modulation
D Fu, J Zou, K Wang, R Zhang, D Yu, J Wu
Nano letters 11 (9), 3809-3815, 2011
512011
Effects of point defects on thermal and thermoelectric properties of InN
AX Levander, T Tong, KM Yu, J Suh, D Fu, R Zhang, H Lu, WJ Schaff, ...
Applied Physics Letters 98 (1), 012108, 2011
512011
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